首页 |元器件品牌 | PCB在线计价/下单
首页 > CM75E3U-12H_09

CM75E3U-12H_09

更新时间：2024-09-18 08:21:08
品牌：MITSUBISHI
描述：IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

PDF下载

中文翻译

PCB计价

CM75E3U-12H_09 概述

IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE IGBT模块大功率开关使用绝缘型

CM75E3U-12H_09 数据手册

通过下载CM75E3U-12H_09数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

PDF下载
MITSUBISHI IGBT MODULES  
CM75E3U-12H  
HIGH POWER SWITCHING USE  
INSULATED TYPE  
CM75E3U-12H  
● IC..................................................................... 75A  
● VCES ..........................................................600V  
● Insulated Type  
● 1-element in a pack  
APPLICATION  
Brake  
OUTLINE DRAWING & CIRCUIT DIAGRAM  
Dimensions in mm  
TC  
measured point  
2–φ6.5 MOUNTING HOLES  
94  
0.25  
7
80  
4
17  
23  
23  
C1  
E2  
C2E1  
13.5  
12  
16  
3-M5 NUTS  
12mm deep  
TAB #110. t = 0.5  
2.5  
2.5  
16  
25  
C2E1  
E2  
C1  
LABEL  
CIRCUIT DIAGRAM  
Feb. 2009  
MITSUBISHI IGBT MODULES  
CM75E3U-12H  
HIGH POWER SWITCHING USE  
INSULATED TYPE  
MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)  
Symbol  
VCES  
Item  
Conditions  
Ratings  
600  
20  
75  
150  
75  
150  
Unit  
V
V
A
A
Collector-emitter voltage  
Gate-emitter voltage  
VGE = 0V  
VCE = 0V  
TC = 25°C  
Pulse  
VGES  
IC  
Collector current  
Emitter current  
ICM  
(Note 1)  
(Note 1)  
IE (Note 2)  
IEM (Note 2)  
TC = 25°C  
Pulse  
A
A
310  
PC (Note 3) Maximum collector dissipation TC = 25°C  
W
–40 ~ +150  
–40 ~ +125  
2500  
2.5 ~ 3.5  
3.5 ~ 4.5  
310  
Tj  
Junction temperature  
Storage temperature  
Isolation voltage  
—
—
°C  
°C  
Vrms  
N·m  
N·m  
g
Tstg  
Viso  
Charged part to base plate, f = 60Hz, AC 1 minute  
Main terminals M5 screw  
Mounting M6 screw  
—
—
Mounting torque  
Weight  
Typical value  
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)  
Limits  
Typ  
—
Symbol  
Item  
Test Conditions  
VCE = VCES, VGE = 0V  
Unit  
mA  
Min  
—
Max  
1
Collector cutoff current  
Gate-emitter  
ICES  
VGE(th)  
IGES  
IC = 7.5mA, VCE = 10V  
VGE = VGES, VCE = 0V  
4.5  
6
7.5  
V
threshold voltage  
Gate-leakage current  
Collector-emitter  
0.5  
3.0  
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.4  
2.6  
—
µA  
Tj = 25°C  
Tj = 125°C  
VCE(sat)  
IC = 75A, VGE = 15V  
(Note 4)  
V
saturation voltage  
Cies  
Input capacitance  
6.6  
3.6  
1
nF  
nF  
nF  
nC  
ns  
VCE = 10V  
VGE = 0V  
Coes  
Output capacitance  
Reverse transfer capacitance  
Total gate charge  
—
Cres  
—
QG  
—
VCC = 300V, IC = 75A, VGE = 15V  
VCC = 300V, IC = 75A  
VGE = 15V  
150  
—
td (on)  
tr  
Turn-on delay time  
Turn-on rise time  
100  
250  
200  
300  
2.6  
160  
—
—
ns  
td (off)  
tf  
Turn-off delay time  
Turn-off fall time  
—
—
RG = 8.3Ω  
Resistive load  
ns  
ns  
V
VEC(Note 2)  
trr (Note 2)  
Qrr (Note 2)  
Rth(j-c)Q  
Rth(j-c)R  
VFM  
Emitter-collector voltage  
Reverse recovery time  
Reverse recovery charge  
—
IE = 75A, VGE = 0V  
IE = 75A  
—
ns  
die / dt = –150A / µs  
Junction to case, IGBT part  
Junction to case, FWDi part  
IF = 75A, Clamp diode part  
IF = 75A  
0.18  
—
µC  
K/W  
K/W  
V
0.4  
0.9  
2.6  
160  
—
Thermal resistance (Note 5)  
—
—
Forward voltage  
trr  
Reverse recovery time  
Reverse recovery charge  
Thermal resistance (Note 5)  
—
ns  
Qrr  
0.18  
—
die / dt = –150A / µs, Clamp diode part  
Junction to case, Clamp diode part  
µC  
K/W  
Rth(j-c)  
0.9  
Case to heat sink, conductive grease applied  
(Per 1/2 module)  
Rth(c-f)  
Contact thermal resistance  
0.07  
—
—
K/W  
(Note 6)  
Note 1. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.  
2. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode.  
3. Junction temperature (Tj) should not increase beyond 150°C.  
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.  
5. Case temperature (TC) measured point is shown in page OUTLINE DRAWING.  
6. Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].  
Feb. 2009  
2
MITSUBISHI IGBT MODULES  
CM75E3U-12H  
HIGH POWER SWITCHING USE  
INSULATED TYPE  
PERFORMANCE CURVES  
OUTPUT CHARACTERISTICS  
TRANSFER CHARACTERISTICS  
(
)
(
)
TYPICAL  
TYPICAL  
150  
150  
125  
100  
75  
VCE = 10V  
VGE=20  
14  
13  
(V)  
125  
Tj=25°C  
12  
11  
10  
100  
15  
75  
50  
25  
0
50  
9
8
25  
Tj = 25°C  
Tj = 125°C  
0
0
2
4
6
8
10  
0
4
8
12  
16  
20  
( )  
( )  
GATE-EMITTER VOLTAGE VGE V  
COLLECTOR-EMITTER VOLTAGE VCE V  
COLLECTOR-EMITTER SATURATION  
VOLTAGE CHARACTERISTICS  
COLLECTOR-EMITTER SATURATION  
VOLTAGE CHARACTERISTICS  
(
)
(
)
TYPICAL  
TYPICAL  
5
4
3
2
1
0
10  
8
Tj = 25°C  
VGE = 15V  
Tj = 25°C  
Tj = 125°C  
6
IC = 150A  
4
IC = 75A  
IC = 30A  
2
0
0
20 40 60 80 100 120 140 160  
0
4
8
12  
16  
20  
( )  
( )  
COLLECTOR CURRENT IC A  
GATE-EMITTER VOLTAGE VGE V  
FREE-WHEEL DIODE  
FORWARD CHARACTERISTICS  
CAPACITANCE CHARACTERISTICS  
(
)
(
)
TYPICAL  
TYPICAL  
7
5
101  
7
Tj = 25°C  
5
Cies  
3
2
3
2
100  
7
Coes  
Cres  
102  
7
5
3
2
5
10–1  
3
2
7
5
3
2
101  
7
VGE = 0V  
10–2  
1.0  
1.4  
1.8  
2.2  
2.6  
3.0  
10–1 5 7100 5 7101 5 7102  
2 3 2 3 2 3  
( )  
EMITTER-COLLECTOR VOLTAGE VEC V  
( )  
COLLECTOR-EMITTER VOLTAGE VCE V  
Feb. 2009  
3
MITSUBISHI IGBT MODULES  
CM75E3U-12H  
HIGH POWER SWITCHING USE  
INSULATED TYPE  
HALF-BRIDGE  
REVERSE RECOVERY CHARACTERISTICS  
OF FREE-WHEEL DIODE  
SWITCHING TIME CHARACTERISTICS  
(
)
(
)
TYPICAL  
TYPICAL  
7
5
103  
7
102  
7
–di/dt = 150A/µs  
Tj = 25°C  
Tj  
= 125°C  
t
f
5
5
3
2
3
2
3
2
td(off)  
102  
7
t
rr  
rr  
102  
7
101  
7
t
r
5
5
5
I
3
2
td(on)  
3
2
3
2
V
CC = 300V  
V
GE  
=
15V  
101  
7
R
G = 8.3Ω  
100  
101  
100  
2
3
5
7
101  
2
3
5
7
102  
100  
2
3
5
7
101  
2
3
5 7  
102  
C ( )  
COLLECTOR CURRENT I  
E ( )  
EMITTER CURRENT I  
A
A
TRANSIENT THERMAL  
IMPEDANCE CHARACTERISTICS  
TRANSIENT THERMAL  
IMPEDANCE CHARACTERISTICS  
(
)
(
)
FWDi part  
IGBT part  
10–32 3 5710–22 3 5710–12 3 57100 2 3 57101  
10–32 3 5710–22 3 5710–12 3 57100 2 3 57101  
101  
101  
7
7
Single Pulse  
= 25°C  
Per unit base = Rth(j – c) = 0.4K/W  
Single Pulse  
= 25°C  
Per unit base = Rth(j – c) = 0.9K/W  
5
5
TC  
TC  
3
2
3
2
100  
100  
7
7
5
5
3
3
2
3
3
2
2
2
10–1  
10–1  
10–1  
10–1  
7
5
7
5
7
5
7
5
3
3
3
3
2
2
2
2
10–2  
10–2  
10–2  
10–2  
7
5
7
5
7
5
7
5
3
3
3
3
2
2
2
2
10–3  
10–3  
10–3  
10–3  
10–52 3 5710–42 3 5710–3  
10–52 3 5710–42 3 5710–3  
( )  
TIME s  
( )  
TIME s  
GATE CHARGE CHARACTERISTICS  
(
)
TYPICAL  
20  
15  
10  
5
IC = 75A  
V
CC = 200V  
VCC = 300V  
0
0
50  
100  
150  
200  
(
nC  
)
GATE CHARGE Q  
G
Feb. 2009  
4

CM75E3U-12H_09 相关器件

型号 制造商 描述 价格 文档
CM75E3U-24F MITSUBISHI HIGH POWER SWITCHING USE 获取价格
CM75E3U-24H MITSUBISHI HIGH POWER SWITCHING USE INSULATED TYPE 获取价格
CM75E3U-24H POWEREX Chopper IGBTMOD 75 Amperes/1200 Volts 获取价格
CM75E3U-24H_09 MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE 获取价格
CM75E3U24H ETC TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 75A I(C) 获取价格
CM75E3Y-12E MITSUBISHI Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel 获取价格
CM75E3Y12E ETC TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 75A I(C) 获取价格
CM75E3Y24E ETC TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 75A I(C) 获取价格
CM75MX-12A MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE 获取价格
CM75MX-12A POWEREX NX-Series CIB Module 75 Amperes/600 Volts 获取价格

CM75E3U-12H_09 相关文章

  • Bourns 密封通孔金属陶瓷微调电位计产品选型手册(英文版)
    2024-09-20
    6
  • Bourns 精密环境传感器产品选型手册(英文版)
    2024-09-20
    9
  • Bourns POWrTher 负温度系数(NTC)热敏电阻手册 (英文版)
    2024-09-20
    8
  • Bourns GMOV 混合过压保护组件产品选型手册(英文版)
    2024-09-20
    6

    • 热门型号

  • LM358
  • UPC8158
  • XC6105A618
  • 2N5087/D28Z
  • TMM-136-06-S-S-SM-23-P
  • NC7WZ16P6X
  • SDR10KSM
  • STC53K33N07
  • ERG3SG242
  • M2XRP2-J1Z1-R
  • TMM-139-01-G-S-SM
  • 54F20
  • TMP513
  • SZ6A11
  • PEL12S
  • 概述
  • 数据手册
    • 2024 ICPDF网 联系我们和版权申明:QQ 272164286