FA01215 [MITSUBISHI]
GaAs FET HYBRID IC; 砷化镓场效应管混合IC
| 型号： | FA01215 |
| 厂家： | 
Mitsubishi Group |
| 描述： | GaAs FET HYBRID IC |
| 文件： | 总2页 (文件大小：18K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI SEMICONDUCTOR GaAs FET
FA01215
GaAs FET HYBRID IC
DESCRIPTION
FA01215 is RF Hybrid IC designed for 900MHz band
Unit:mm
14.7
small size handheld radio.
14.2
2
3.5
2
3.5
2
0.6
FEATURES
• Low voltage
3.0V
• High gain
24dB(typ.)
50%
• High efficiency
• High power
6
34.5dBm
APPLICATION
GSM IV
1
2
3
4
5
2.25 2.5
2.5
2.5
2.5 1.95
0.25±0.1
RF INPUT
1
2
3
4
5
6
VG1,2
VD1
VD2
0.5±0.15
RF OUTPUT
GND(FIN)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Ratings
4.5
Condition
PO£34.5dBm
ZG=ZL=50W
Ta
Unit
25˚C
VD
Drain voltage
V
dBm
˚C
Pin
Input power
15
25˚C
–
–
TC(op)
Tstg
-20 to +85
-30 to +90
Operation case temperature.
Storage temperature.
˚C
Note: Each maximum ratings is guaranteed independently and P.W.=580µs,duty=1/8 operation.
ELECTRICAL CHARACTERISTICS (Ta=25˚C)
Limits
Symbol
Parameter
Test conditions
Unit
Min
Typ
–
Max
915
–
890
34.5
50
MHz
f
Frequency
Output power
Note1
Note2
PO
–
–
–
–
–
–
dBm
%
–
ht
Total efficiency
Total gate current
Return loss
-3
0
mA
dB
Igt
–
–
–
rin
-6
Note3
-30
-60
2nd harmonics, 3rd harmonics
Stability
2fo,3fo
OSC.T
VSWR.T
dBc
dBc
–
Note4
Note5
Load VSWR tolerance
No degradation or destroy
Note1: Pin=13dBm,VD1=VD2=3.0V(Pulse: P.W.=580µs,duty=1/8),VG1,2=-2.0V,ZG=ZL=50W
Note2: PO=34.5dBm(Pin controlled),VD1=VD2=3.0V(Pulse: P.W.=580µs,duty=1/8),VG1,2=-2.0V,ZG=ZL=50W
Note3: PO=34.5dBm(Pin controlled),VD1=VD2=3.0V(DC),VG1,2=-2.0V,ZG=ZL=50W
Note4: PO=0~34.5dBm(Pin controlled),VD1=VD2=3.0V(DC),VG1,2=-2.0V,r L=3:1(all phase),ZG=50W
Note5: PO=34.5dBm(Pin controlled),VD1=VD2=4.5V(Pulse:P.W.=580µs,duty=1/8),VG1,2=-2.0V,r L=6:1(all phase),ZG=50W
Nov. ´97
MITSUBISHI SEMICONDUCTOR GaAs FET
FA01215
GaAs FET HYBRID IC
TYPICAL CHARACTERISTICS (Ta=25˚C)
OUTPUT POWER, TOTAL EFFICIENCY
vs INPUT POWER
40
35
30
25
20
15
10
5
90
80
70
60
50
40
30
20
VD=3.0V
VG=-2.0V
PO
f=902.5MHz
hT
0
10
0
-5
-30 -25 -20 -15 -10 -5
0
5
10 15
INPUT POWER Pin(dBm)
EQUIVALENT CIRCUIT
1ST GATE
2ND GATE
2ND DRAIN
1ST DRAIN
MATCHING
CIRCUIT
MATCHING
CIRCUIT
MATCHING
RF INPUT
RF OUTPUT
CIRCUIT
GND(FIN)
Nov. ´97
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