FD1500AU-120DA [MITSUBISHI]
HIGH POWER, HIGH FREQUENCY PRESS PACK TYPE; 高功率，高频率按包装类型
| 型号： | FD1500AU-120DA |
| 厂家： | 
Mitsubishi Group |
| 描述： | HIGH POWER, HIGH FREQUENCY PRESS PACK TYPE |
| 文件： | 总2页 (文件大小：32K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI SOFT RECOVERY DIODE
FD1500AU-120DA
HIGH POWER, HIGH FREQUENCY
PRESS PACK TYPE
OUTLINE DRAWING
Dimensions in mm
FD1500AU-120DA
6.35 × 10.8
φ3.5 ± 0.2
2.2 ± 0.2DEPTH
φ85 ± 0.2
TYPE NAME
12 ± 2
φ85 ± 0.2
φ120MAX
φ3.5 ± 0.2
¡VRRM Repetitive peak reverse voltage ................... 6000V
¡IT(AV) Average on-state current .................... 1200A
2.2 ± 0.2DEPTH
APPLICATION
High-power inverters
Fly-hweel diode for GCT Thyristor
Power supplies as high frequency rectifiers
MAXIMUM RATINGS
Voltage class
Symbol
Parameter
Conditions
Unit
VRRM
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
—
—
—
6000
6000
4800
3200
V
V
V
V
VRSM
VR(DC)
V(LTDS)
Long term DC stability voltage λ = 100Fit
Symbol
IF(RMS)
IF(AV)
IFSM
Parameter
Conditions
Ratings
Unit
A
Applied for all condition angles
RMS forward current
Average forward current
Surge forward current
Current-squared, time integration
Critical rate of rise of reverse
recovery current
1900
1200
f = 60Hz, sinewave θ = 180°, Tf =74°C
A
26
2.8× 106
kA
A2s
One half cycle at 60Hz, Tj =125°C start
I2t
IFM =1500A, VR = 3000V, Tj = 25/125°C
CC =6µF, LC = 0.3µH
1000
A/µs
di/dt
(See Fig. 1, 2)
Operation junction temperature
Storage temperature
Mounting force required
Weight
Tj
–40 ~ 125
–40 ~ 150
39 ~ 55
—
°C
Tstg
—
°C
kN
g
(Recommended value 47kN)
Typical value 1450g
—
ELECTRICAL CHARACTERISTICS
Limits
Typ.
—
Symbol
Parameter
Forward voltage
Test conditions
Unit
Min.
—
Max.
5
VFM
IFM = 3400A, Tj = 125°C
V
IRRM
QRR
Repetitive peak reverse current VRM = 6000V, Tj = 125°C
—
—
150
mA
µC
Reverse recovery charge
Reverse recovery energy
Thermal resistance
IFM = 1500A, di/dt = 1000A/µs, VR = 3000V, Tj = 125°C
—
—
5400
9.4
Erec
Rth(j-f)
CC = 6µF, LC = 0.3µH
(See Fig. 1, 2)
—
—
J/P
K/W
Junction to Fin
—
—
0.0071
Jul. 2002
MITSUBISHI SOFT RECOVERY DIODE
FD1500AU-120DA
HIGH POWER, HIGH FREQUENCY
PRESS PACK TYPE
Q
RR=(trr×IRM)/2
I
T
trr
ANL
L(load)
TUD
0
CDi
Cc
di/dt(0~50%IRM
)
Lc
V
R
50%I
T
50%IRM
GCT
90%IRM
VR
V
RM
Fig. 1 Reverse recovery test circuit
Fig. 2 Reverse recovery waveform
PERFORMANCE CURVES
Erec VS I
(TYPICAL)
F
MAXIMUM ON STATE CHARACTERISTIC
104
12
11
10
9
TYPICAL : Tj=125°C
7
CONDITION
= 3000V, T
/d = 1000A/µs
Cc = 6µF, Lc = 0.3µH
5
3
2
V
R
j =125°C
di
t
103
7
5
8
7
6
3
2
5
102
7
4
3
5
2
3
2
1
101
0
0
1
2
3
4
5
6
7
0
500 1000 1500 2000 2500 3000
IF (A)
V
FM (V)
MAXIMUM THERMAL IMPEDANCE
CHARACTERISTIC
(JUNCTION TO FIN)
100 2 3 5 7101
0.010
0.009
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.001
0.000
10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7100
TIME (S)
Jul. 2002
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