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FK10VS-10-T2 [MITSUBISHI]

Power Field-Effect Transistor, 10A I(D), 500V, 1.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN;

FK10VS-10-T2


元器件型号：	FK10VS-10-T2
生产厂家：	MITSUBISHI ELECTRIC SEMICONDUCTOR
描述和应用：	Power Field-Effect Transistor, 10A I(D), 500V, 1.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN 开关脉冲晶体管
PDF文件：	总5页 (文件大小：202K)
下载文档：	下载PDF数据表文档文件
型号参数：FK10VS-10-T2参数

FK10VS12

TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 10A I(D) | TO-263AB

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10 ETC

FK10VS-12

HIGH-SPEED SWITCHING USE

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9 MITSUBISHI

FK10VS-12

HIGH-SPEED SWITCHING USE

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23 POWEREX

FK10VS-12

Power Field-Effect Transistor, 10A I(D), 600V, 1.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 MITSUBISHI

FK10VS-12-T1

Power Field-Effect Transistor, 10A I(D), 600V, 1.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN

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0 MITSUBISHI

FK10VS-12-T2

Power Field-Effect Transistor, 10A I(D), 600V, 1.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN

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0 MITSUBISHI

FK10VS9

TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 10A I(D) | TO-263AB

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22 ETC

FK10VS-9

HIGH-SPEED SWITCHING USE

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13 MITSUBISHI

FK10VS-9

HIGH-SPEED SWITCHING USE

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20 POWEREX

FK10VS-9-T1

Power Field-Effect Transistor, 10A I(D), 450V, 0.92ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN

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0 MITSUBISHI

FK10VS-9-T2

Power Field-Effect Transistor, 10A I(D), 450V, 0.92ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN

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0 MITSUBISHI

FK11

Multilayer Ceramic Capacitors

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8 TDK

FK1120004

CMOS Output Clock Oscillator, 11.2MHz Nom, SMD, 4 PIN

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0 DIODES

FK11C0G1H104J

Multilayer Ceramic Capacitors

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9 TDK

FK11C0G1H104JN006

CAP CER 0.1UF 50V C0G RADIAL

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0 TDK

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