FS10VS-12-T2 [MITSUBISHI]
Power Field-Effect Transistor, 10A I(D), 600V, 0.94ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN;
| 型号： | FS10VS-12-T2 |
| 厂家： | 
Mitsubishi Group |
| 描述： | Power Field-Effect Transistor, 10A I(D), 600V, 0.94ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN |
| 文件： | 总4页 (文件大小：197K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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