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FS10VS-9 [MITSUBISHI]

HIGH-SPEED SWITCHING USE; 高速开关使用
FS10VS-9
型号: FS10VS-9
厂家: Mitsubishi Group    Mitsubishi Group
描述:

HIGH-SPEED SWITCHING USE
高速开关使用

晶体 开关 晶体管
文件: 总4页 (文件大小:45K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

FS10VS-9A

High-Speed Switching Use Nch Power MOS FET

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RENESAS

FS10VS-9A-T11

High-Speed Switching Use Nch Power MOS FET

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RENESAS

FS10VS03

TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 10A I(D) | TO-263AB

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ETC

FS10VS06

TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-263AB

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ETC

FS10VS10

TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 10A I(D) | TO-263AB

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ETC

FS10VS12

TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 10A I(D) | TO-263AB

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ETC

FS10VS14A

TRANSISTOR | MOSFET | N-CHANNEL | 700V V(BR)DSS | 10A I(D) | TO-263AB

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ETC

FS10VS2

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 10A I(D) | TO-263AB

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-
ETC

FS10VS3

TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 10A I(D) | TO-263AB

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-
ETC

FS10VS5

TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 10A I(D) | TO-263AB

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-
ETC

FS10VS6

TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 10A I(D) | TO-263AB

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-
ETC

FS10VS9

TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 10A I(D) | TO-263AB

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-
ETC

FS10VSH-03-T2

Power Field-Effect Transistor, 10A I(D), 30V, 0.141ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN

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MITSUBISHI

FS10VSH-06

Power Field-Effect Transistor, 10A I(D), 60V, 0.073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN

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-
POWEREX

FS10VSH-06

Power Field-Effect Transistor, 10A I(D), 60V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN

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MITSUBISHI

FS10VSH-06-T1

Power Field-Effect Transistor, 10A I(D), 60V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN

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-
MITSUBISHI

FS10VSH-06-T2

Power Field-Effect Transistor, 10A I(D), 60V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN

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MITSUBISHI

FS10VSH-2

Power Field-Effect Transistor, 10A I(D), 100V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN

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MITSUBISHI

FS10VSH-2-T1

Power Field-Effect Transistor, 10A I(D), 100V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN

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MITSUBISHI

FS10VSH-2-T2

Power Field-Effect Transistor, 10A I(D), 100V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN

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MITSUBISHI