FS2KM-3
更新时间：2024-09-18 14:22:47
品牌：MITSUBISHI
描述：Power Field-Effect Transistor, 2A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FN, 3 PIN
概述
规格参数
数据手册FS2KM-3 概述
Power Field-Effect Transistor, 2A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FN, 3 PIN 功率场效应晶体管
FS2KM-3 规格参数
| 生命周期： | Obsolete | 零件包装代码： | TO-220FN |
| 包装说明： | FLANGE MOUNT, R-PSFM-T3 | 针数： | 3 |
| Reach Compliance Code： | unknown | ECCN代码： | EAR99 |
| 风险等级： | 5.84 | 配置： | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压： | 150 V | 最大漏极电流 (Abs) (ID)： | 2 A |
| 最大漏极电流 (ID)： | 2 A | 最大漏源导通电阻： | 0.8 Ω |
| FET 技术： | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码： | TO-220AB |
| JESD-30 代码： | R-PSFM-T3 | 元件数量： | 1 |
| 端子数量： | 3 | 工作模式： | ENHANCEMENT MODE |
| 最高工作温度： | 150 °C | 封装主体材料： | PLASTIC/EPOXY |
| 封装形状： | RECTANGULAR | 封装形式： | FLANGE MOUNT |
| 极性/信道类型： | N-CHANNEL | 最大功率耗散 (Abs)： | 15 W |
| 最大脉冲漏极电流 (IDM)： | 8 A | 认证状态： | Not Qualified |
| 子类别： | FET General Purpose Power | 表面贴装： | NO |
| 端子形式： | THROUGH-HOLE | 端子位置： | SINGLE |
| 晶体管应用： | SWITCHING | 晶体管元件材料： | SILICON |
| Base Number Matches： | 1 |
FS2KM-3 数据手册
通过下载FS2KM-3数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载MITSUBISHI Nch POWER MOSFET
FS2KM-3
HIGH-SPEED SWITCHING USE
FS2KM-3
OUTLINE DRAWING
Dimensions in mm
10 ± 0.3
2.8 ± 0.2
f 3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
E
0.75 ± 0.15
2.54 ± 0.25
0.75 ± 0.15
2.54 ± 0.25
1 2 3
w
¡10V DRIVE
¡VDSS ................................................................................150V
¡rDS (ON) (MAX) ................................................................ 0.8Ω
¡ID ............................................................................................2A
¡Integrated Fast Recovery Diode (TYP.) ............. 65ns
¡Viso ................................................................................ 2000V
q GATE
w DRAIN
e SOURCE
q
e
TO-220FN
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Conditions
Ratings
Unit
V
VGS = 0V
VDS = 0V
150
±20
V
2
A
IDM
IDA
Drain current (Pulsed)
8
A
Avalanche drain current (Pulsed) L = 100µH
Source current
2
A
IS
2
A
ISM
Source current (Pulsed)
Maximum power dissipation
Channel temperature
8
15
A
PD
W
°C
Tch
Tstg
Viso
—
–55 ~ +150
–55 ~ +150
2000
Storage temperature
°C
V
g
Isolation voltage
Weight
AC for 1minute, Terminal to case
Typical value
2.0
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS2KM-3
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol Parameter
Limits
Unit
Test conditions
Min.
150
—
Typ.
—
Max.
—
ID = 1mA, VGS = 0V
V
(BR) DSS Drain-source breakdown voltage
V
µA
mA
V
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
VGS = ±20V, VDS = 0V
VDS = 150V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 1A, VGS = 10V
ID = 1A, VGS = 10V
ID = 1A, VDS = 5V
—
±0.1
0.1
4.0
0.80
0.80
—
—
—
2.0
—
3.0
0.59
0.59
3.0
280
60
Ω
—
V
—
S
Ciss
—
—
pF
pF
pF
ns
ns
ns
ns
Coss
Crss
Output capacitance
VDS = 10V, VGS = 0V, f = 1MHz
—
—
Reverse transfer capacitance
Turn-on delay time
—
14
—
td (on)
tr
—
16
—
Rise time
—
8
—
VDD = 80V, ID = 1A, VGS = 10V, RGEN = RGS = 50Ω
td (off)
tf
Turn-off delay time
—
19
—
Fall time
—
7
—
IS = 1A, VGS = 0V
VSD
Source-drain voltage
Thermal resistance
—
1.0
—
1.5
8.33
—
V
°C/W
ns
Rth (ch-c)
trr
Channel to case
—
IS = 2A, dis/dt = –100A/µs
Reverse recovery time
—
65
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
MAXIMUM SAFE OPERATING AREA
20
16
12
8
2
101
7
5
3
2
tw = 10ms
100ms
100
7
5
3
2
1ms
10ms
DC
10–1
7
4
5
TC = 25°C
3
2
Single Pulse
0
0
50
100
150
200
2 3 5 7101 2 3 5 7102 2 3 5 7103
2
CASE TEMPERATURE
TC
(°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
V
GS = 20V 10V 8V 6V
VGS = 20V 10V 6V
5.0
4.0
3.0
2.0
1.0
0
2.0
1.6
1.2
0.8
0.4
0
T
C
= 25°C
T
C
= 25°C
Pulse Test
Pulse Test
5V
PD
= 15W
5V
4V
2.0
0
1.0
2.0
3.0
4.0
5.0
0
0.4
0.8
1.2
1.6
DRAIN-SOURCE VOLTAGE
VDS (V)
DRAIN-SOURCE VOLTAGE
VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS2KM-3
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
5.0
4.0
3.0
2.0
1.0
0
1.0
0.8
0.6
0.4
0.2
0
T
C
= 25°C
T
C
= 25°C
Pulse Test
Pulse Test
V
GS = 10V
20V
I
D
= 3A
2A
1A
0
0
3
4
8
12
16
20
10–2 2 3 5 710–1 2 3 5 7100 2 3 5 7101
GATE-SOURCE VOLTAGE
V
GS (V)
DRAIN CURRENT (A)
ID
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
10
8
101
7
T
C
= 25°C
DS = 10V
Pulse Test
V
DS = 5V
V
Pulse Test
5
4
3
2
6
100
7
4
TC = 25°C
5
75°C
4
125°C
3
2
2
0
10–1
4
8
12
16
20
10–1
2
3 4 5 7 100 3 4 5 7 101
2
GATE-SOURCE VOLTAGE
V
GS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
2
103
7
Tch = 25°C
Tch = 25°C
DD = 80V
GS = 10V
103
7
V
V
R
f = 1MH
Z
5
3
2
V
GS = 0V
5
3
2
GEN = RGS = 50Ω
Ciss
102
7
t
t
f
102
7
5
3
2
t
t
d(off)
d(on)
5
3
2
Coss
Crss
101
7
r
101
7
5
3
2
5
3
2
100
5 7100 2 3 5 7101 2 3 5 7102 2 3
DRAIN-SOURCE VOLTAGE DS (V)
10–1
2
3 4 5 7 100
2
3 4 5 7 101
ID (A)
V
DRAIN CURRENT
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS2KM-3
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
20
16
12
8
10
8
Tch = 25°C
= 2A
V
GS = 0V
I
D
Pulse Test
6
V
DS = 50V
4
80V
TC = 125°C
75°C
25°C
100V
4
2
0
0
0
4
8
12
16
20
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE
Qg
(nC)
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7
5.0
4.0
3.0
2.0
1.0
0
V
GS = 10V
V
DS = 10V
ID = 1mA
I
D
= 1/2I
D
5
Pulse Test
4
3
2
100
7
5
4
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.4
1.2
1.0
0.8
0.6
0.4
102
7
5
V
I
GS = 0V
D = 1mA
3
2
101
7
5
3
2
D = 1.0
0.5
0.2
P
DM
100
7
5
3
2
tw
0.1
0.05
0.02
0.01
T
tw
D
=
T
Single Pulse
10–1
–50
0
50
100
150
10–423 5710–323 5710–223 5710–123 57100 23 57101 23 57102
PULSE WIDTH (s)
CHANNEL TEMPERATURE Tch (°C)
tw
Feb.1999
FS2KM-3 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| FS2KM12 | ETC | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 2A I(D) | SOT-186 | 获取价格 |
|
| FS2KM14A | ETC | TRANSISTOR | MOSFET | N-CHANNEL | 700V V(BR)DSS | 2A I(D) | SOT-186 | 获取价格 |
|
| FS2KM16A | ETC | TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 2A I(D) | SOT-186 | 获取价格 |
|
| FS2KM18A | ETC | TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 2A I(D) | SOT-186 | 获取价格 |
|
| FS2KM3 | ETC | TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 2A I(D) | SOT-186 | 获取价格 |
|
| FS2KMH-3 | POWEREX | Power Field-Effect Transistor, 2A I(D), 150V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220FN, 3 PIN | 获取价格 |
|
| FS2KMH-3 | MITSUBISHI | Power Field-Effect Transistor, 2A I(D), 150V, 0.79ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FN, 3 PIN | 获取价格 |
|
| FS2KMH3 | ETC | TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 2A I(D) | SOT-186 | 获取价格 |
|
| FS2KMJ-3 | MITSUBISHI | HIGH-SPEED SWITCHING USE | 获取价格 |
|
| FS2KMJ-3 | POWEREX | Nch POWER MOSFET HIGH-SPEED SWITCHING USE | 获取价格 |
|
FS2KM-3 相关文章
Bourns 密封通孔金属陶瓷微调电位计产品选型手册(英文版)
- 2024-09-20
- 6
Bourns 精密环境传感器产品选型手册(英文版)
- 2024-09-20
- 9
Bourns POWrTher 负温度系数(NTC)热敏电阻手册 (英文版)
- 2024-09-20
- 8
Bourns GMOV 混合过压保护组件产品选型手册(英文版)
- 2024-09-20
- 6
