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FS30ASJ-03

更新时间：2024-09-18 01:49:23
品牌：MITSUBISHI
描述：HIGH-SPEED SWITCHING USE

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FS30ASJ-03 概述

HIGH-SPEED SWITCHING USE 高速开关使用 功率场效应晶体管

FS30ASJ-03 规格参数

生命周期：Transferred包装说明：SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.37Is Samacsys：N
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：30 V最大漏极电流 (Abs) (ID)：30 A
最大漏极电流 (ID)：30 A最大漏源导通电阻：0.073 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PSSO-G2
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：30 W最大脉冲漏极电流 (IDM)：120 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子形式：GULL WING
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

FS30ASJ-03 数据手册

通过下载FS30ASJ-03数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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MITSUBISHI Nch POWER MOSFET  
FS30ASJ-03  
HIGH-SPEED SWITCHING USE  
FS30ASJ-03  
OUTLINE DRAWING  
Dimensions in mm  
6.5  
0.5 ± 0.1  
5.0 ± 0.2  
r
1.0  
A
0.9MAX.  
0.5 ± 0.2  
2.3 2.3  
0.8  
q
w
e
w r  
q GATE  
¡4V DRIVE  
w DRAIN  
e SOURCE  
r DRAIN  
q
¡VDSS .................................................................................. 30V  
¡rDS (ON) (MAX) .............................................................. 38mΩ  
¡ID ......................................................................................... 30A  
¡Integrated Fast Recovery Diode (TYP.) ............. 45ns  
e
MP-3  
APPLICATION  
Motor control, Lamp control, Solenoid control  
DC-DC converter, etc.  
MAXIMUM RATINGS (Tc = 25°C)  
Symbol  
VDSS  
VGSS  
ID  
Parameter  
Drain-source voltage  
Gate-source voltage  
Drain current  
Conditions  
Ratings  
Unit  
V
VGS = 0V  
VDS = 0V  
30  
±20  
V
30  
A
IDM  
IDA  
Drain current (Pulsed)  
120  
A
Avalanche drain current (Pulsed) L = 30µH  
Source current  
30  
A
IS  
30  
A
ISM  
Source current (Pulsed)  
Maximum power dissipation  
Channel temperature  
120  
A
PD  
30  
W
°C  
°C  
g
Tch  
–55 ~ +150  
–55 ~ +150  
0.26  
Tstg  
—
Storage temperature  
Weight  
Typical value  
Feb.1999  
MITSUBISHI Nch POWER MOSFET  
FS30ASJ-03  
HIGH-SPEED SWITCHING USE  
ELECTRICAL CHARACTERISTICS (Tch = 25°C)  
Symbol Parameter  
Limits  
Unit  
Test conditions  
Min.  
30  
—
—
1.0  
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.  
—
Max.  
—
ID = 1mA, VGS = 0V  
V
(BR) DSS Drain-source breakdown voltage  
V
µA  
mA  
V
IGSS  
IDSS  
Gate-source leakage current  
Drain-source leakage current  
Gate-source threshold voltage  
Drain-source on-state resistance  
Drain-source on-state resistance  
VGS = ±20V, VDS = 0V  
VDS = 30V, VGS = 0V  
ID = 1mA, VDS = 10V  
ID = 15A, VGS = 10V  
ID = 15A, VGS = 4V  
—
±0.1  
0.1  
2.0  
38  
—
VGS (th)  
rDS (ON)  
rDS (ON)  
VDS (ON)  
yfs  
1.5  
29  
mΩ  
mΩ  
V
44  
73  
Drain-source on-state voltage ID = 15A, VGS = 10V  
0.435  
15  
0.57  
—
ID = 15A, VDS = 5V  
Forward transfer admittance  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
S
Ciss  
800  
250  
110  
14  
—
pF  
pF  
pF  
ns  
VDS = 10V, VGS = 0V, f = 1MHz  
Coss  
Crss  
—
—
td (on)  
tr  
—
55  
—
ns  
VDD = 15V, ID = 15A, VGS = 10V, RGEN = RGS = 50Ω  
td (off)  
tf  
Turn-off delay time  
Fall time  
65  
—
ns  
60  
—
ns  
VSD  
Source-drain voltage  
Thermal resistance  
Reverse recovery time  
IS = 15A, VGS = 0V  
Channel to case  
1.0  
—
1.5  
4.17  
—
V
Rth (ch-c)  
trr  
°C/W  
ns  
IS = 15A, dis/dt = –50A/µs  
45  
PERFORMANCE CURVES  
POWER DISSIPATION DERATING CURVE  
MAXIMUM SAFE OPERATING AREA  
50  
40  
30  
20  
10  
0
2
102  
7
5
3
2
tw = 10ms  
100ms  
1ms  
101  
7
5
3
2
T
C
= 25°C  
10ms  
DC  
Single Pulse  
100  
7
5
3
2
0
50  
100  
150  
200  
2 3 5 7100 2 3 5 7101 2 3 5 7102  
2
CASE TEMPERATURE  
T
C
(°C)  
DRAIN-SOURCE VOLTAGE VDS (V)  
OUTPUT CHARACTERISTICS  
(TYPICAL)  
OUTPUT CHARACTERISTICS  
(TYPICAL)  
V
GS = 10V  
50  
40  
30  
20  
10  
0
20  
16  
12  
8
Tc = 25°C  
Pulse Test  
6V  
8V  
6V  
4V  
3V  
= 30W  
2.5V  
V
GS = 10V  
8V  
4V  
PD  
3V  
2V  
4
P
D
= 30W  
2V  
Tc = 25°C  
Pulse Test  
0
0
1.0  
2.0  
3.0  
4.0  
5.0  
0
0.4  
0.8  
1.2  
1.6  
2.0  
DRAIN-SOURCE VOLTAGE  
V
DS (V)  
DRAIN-SOURCE VOLTAGE  
VDS (V)  
Feb.1999  
MITSUBISHI Nch POWER MOSFET  
FS30ASJ-03  
HIGH-SPEED SWITCHING USE  
ON-STATE VOLTAGE VS.  
GATE-SOURCE VOLTAGE  
(TYPICAL)  
ON-STATE RESISTANCE VS.  
DRAIN CURRENT  
(TYPICAL)  
5.0  
4.0  
3.0  
2.0  
1.0  
0
50  
40  
30  
20  
10  
0
Tc = 25°C  
Pulse Test  
Tc = 25°C  
Pulse Test  
V
GS = 4V  
10V  
I
D
= 50A  
30A  
10A  
0
0
3
2
4
6
8
10  
3
5 7100 2 3 5 7101 2 3 5 7102 2 3  
DRAIN CURRENT (A)  
GATE-SOURCE VOLTAGE  
VGS (V)  
ID  
FORWARD TRANSFER ADMITTANCE  
VS.DRAIN CURRENT  
(TYPICAL)  
TRANSFER CHARACTERISTICS  
(TYPICAL)  
40  
32  
24  
16  
8
102  
7
Tc = 25°C  
V
DS = 5V  
V
DS = 10V  
Pulse Test  
5
Pulse Test  
4
3
2
T
C
= 25°C 75°C  
125°C  
101  
7
5
4
3
2
0
100  
2
4
6
8
10  
100  
2
3 4 5 7 101 3 4 5 7 102  
2
GATE-SOURCE VOLTAGE  
VGS (V)  
DRAIN CURRENT ID (A)  
CAPACITANCE VS.  
DRAIN-SOURCE VOLTAGE  
(TYPICAL)  
SWITCHING CHARACTERISTICS  
(TYPICAL)  
2
102  
7
t
d(off)  
Tch = 25°C  
f = 1MH  
GS = 0V  
104  
7
5
3
2
Z
5
V
t
t
f
4
3
2
r
t
d(on)  
103  
7
5
3
2
Ciss  
101  
7
Coss  
Crss  
5
4
102  
7
5
3
2
3
2
Tch = 25°C  
V
V
DD = 15V  
GS = 10V  
RGEN = RGS = 50Ω  
100  
5 7100 2 3 5 7101 2 3 5 7102 2 3  
DRAIN-SOURCE VOLTAGE DS (V)  
100  
2
3 4 5 7 101  
2
3 4 5 7 102  
V
DRAIN CURRENT  
ID (A)  
Feb.1999  
MITSUBISHI Nch POWER MOSFET  
FS30ASJ-03  
HIGH-SPEED SWITCHING USE  
GATE-SOURCE VOLTAGE  
VS.GATE CHARGE  
(TYPICAL)  
SOURCE-DRAIN DIODE  
FORWARD CHARACTERISTICS  
(TYPICAL)  
10  
8
50  
40  
30  
20  
10  
0
V
GS = 0V  
Tch = 25°C  
= 30A  
Pulse Test  
I
D
6
V
DS = 10V  
20V  
25V  
4
TC = 125°C  
75°C  
25°C  
2
0
0
4
8
12  
16  
(nC)  
20  
0
0.4  
0.8  
1.2  
1.6  
2.0  
GATE CHARGE  
Q
g
SOURCE-DRAIN VOLTAGE V  
SD (V)  
ON-STATE RESISTANCE VS.  
CHANNEL TEMPERATURE  
(TYPICAL)  
THRESHOLD VOLTAGE VS.  
CHANNEL TEMPERATURE  
(TYPICAL)  
101  
7
4.0  
3.2  
2.4  
1.6  
0.8  
0
V
GS = 10V  
V
DS = 10V  
ID = 1mA  
I
D
= 1/2I  
D
5
Pulse Test  
4
3
2
100  
7
5
4
3
2
10–1  
–50  
0
50  
100  
150  
–50  
0
50  
100  
150  
CHANNEL TEMPERATURE Tch (°C)  
CHANNEL TEMPERATURE Tch (°C)  
BREAKDOWN VOLTAGE VS.  
CHANNEL TEMPERATURE  
(TYPICAL)  
TRANSIENT THERMAL IMPEDANCE  
CHARACTERISTICS  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
102  
7
5
V
I
GS = 0V  
D = 1mA  
3
2
101  
7
5
3
2
D = 1.0  
0.5  
0.2  
P
DM  
100  
7
5
3
2
tw  
0.1  
0.05  
0.02  
0.01  
T
tw  
D
=
T
Single Pulse  
10–1  
–50  
0
50  
100  
150  
10–423 5710–323 5710–223 5710–123 57100 23 57101 23 57102  
PULSE WIDTH (s)  
CHANNEL TEMPERATURE Tch (°C)  
tw  
Feb.1999  

FS30ASJ-03 相关器件

型号 制造商 描述 价格 文档
FS30ASJ-06 MITSUBISHI HIGH-SPEED SWITCHING USE 获取价格
FS30ASJ-06 POWEREX Nch POWER MOSFET HIGH-SPEED SWITCHING USE 获取价格
FS30ASJ-06 RENESAS MITSUBISHI Nch POWER MOSFET 获取价格
FS30ASJ-06-T1 MITSUBISHI Power Field-Effect Transistor, 30A I(D), 60V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET 获取价格
FS30ASJ-06F RENESAS High-Speed Switching Use Nch Power MOS FET 获取价格
FS30ASJ-06F-T13 RENESAS High-Speed Switching Use Nch Power MOS FET 获取价格
FS30ASJ-2 MITSUBISHI HIGH-SPEED SWITCHING USE 获取价格
FS30ASJ-2 POWEREX Nch POWER MOSFET HIGH-SPEED SWITCHING USE 获取价格
FS30ASJ-2 RENESAS High-Speed Switching Use Nch Power MOS FET 获取价格
FS30ASJ-2-T13 RENESAS High-Speed Switching Use Nch Power MOS FET 获取价格

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