FS30UM-2 [MITSUBISHI]
Power Field-Effect Transistor, 30A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN;
| 型号： | FS30UM-2 |
| 厂家： | 
Mitsubishi Group |
| 描述： | Power Field-Effect Transistor, 30A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总4页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI Nch POWER MOSFET
FS30UM-2
HIGH-SPEED SWITCHING USE
FS30UM-2
OUTLINE DRAWING
Dimensions in mm
4.5
1.3
10.5MAX.
r
f 3.6
1.0
0.8
D
2.54
2.54
0.5
2.6
q
w e
w r
q GATE
¡10V DRIVE
w DRAIN
e SOURCE
r DRAIN
q
¡VDSS ................................................................................100V
¡rDS (ON) (MAX) ........................................................... 100mΩ
¡ID ......................................................................................... 30A
¡Integrated Fast Recovery Diode (TYP.) ............. 95ns
e
TO-220
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Conditions
Ratings
Unit
V
VGS = 0V
VDS = 0V
100
±20
V
30
A
IDM
IDA
Drain current (Pulsed)
120
A
Avalanche drain current (Pulsed) L = 100µH
Source current
30
30
A
IS
A
ISM
Source current (Pulsed)
Maximum power dissipation
Channel temperature
120
A
PD
45
W
°C
Tch
Tstg
—
–55 ~ +150
–55 ~ +150
2.0
Storage temperature
°C
g
Weight
Typical value
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS30UM-2
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol Parameter
Limits
Unit
Test conditions
Min.
100
—
Typ.
—
Max.
—
ID = 1mA, VGS = 0V
V
(BR) DSS Drain-source breakdown voltage
V
µA
mA
V
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
VGS = ±20V, VDS = 0V
VDS = 100V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 15A, VGS = 10V
ID = 15A, VGS = 10V
ID = 15A, VDS = 10V
—
±0.1
0.1
4.0
100
1.50
—
—
—
2.0
—
3.0
69
mΩ
V
—
1.04
18
—
S
Ciss
—
1250
230
105
25
—
pF
pF
pF
ns
ns
ns
ns
Coss
Crss
Output capacitance
VDS = 10V, VGS = 0V, f = 1MHz
—
—
Reverse transfer capacitance
Turn-on delay time
—
—
td (on)
tr
—
—
Rise time
—
60
—
VDD = 50V, ID = 15A, VGS = 10V, RGEN = RGS = 50Ω
td (off)
tf
Turn-off delay time
—
60
—
Fall time
—
50
—
IS = 15A, VGS = 0V
Channel to case
VSD
Source-drain voltage
Thermal resistance
—
1.0
—
1.5
2.77
—
V
°C/W
ns
Rth (ch-c)
trr
—
IS = 30A, dis/dt = –100A/µs
Reverse recovery time
—
95
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
MAXIMUM SAFE OPERATING AREA
50
40
30
20
10
0
3
2
102
7
tw = 10ms
100ms
5
3
2
101
7
5
3
2
1ms
100
7
10ms
T
C
= 25°C
5
3
DC
2 3
Single Pulse
0
50
100
150
200
3
5 7100 2 3 5 7101 2 3 5 7102
CASE TEMPERATURE
T
C
(°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
V
GS = 20V 10V
VGS = 20V 10V 8V 7V
50
40
30
20
10
0
20
16
12
8
T
C
= 25°C
8V
6V
P
D = 45W
Pulse Test
7V
T
C
= 25°C
Pulse Test
6V
5V
4
5V
0
0
1
2
3
4
5
0
0.4
0.8
1.2
1.6
2.0
DRAIN-SOURCE VOLTAGE
V
DS (V)
DRAIN-SOURCE VOLTAGE V
DS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS30UM-2
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
5.0
4.0
3.0
2.0
1.0
0
100
80
60
40
20
0
T
C
= 25°C
Pulse Test
V
GS = 10V
50A
20V
30A
10A
TC = 25°C
Pulse Test
0
0
3
4
8
12
16
20
3
5 7100 2 3 5 7101 2 3 5 7102 2 3
DRAIN CURRENT (A)
GATE-SOURCE VOLTAGE
V
GS (V)
ID
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
50
40
30
20
10
0
102
7
T
V
C
= 25°C
DS = 10V
Pulse Test
V
DS = 10V
Pulse Test
5
4
3
2
101
7
5
4
TC = 25°C
3
2
75°C
125°C
100
4
8
12
16
20
100
2
3 4 5 7 101 3 4 5 7 102
2
GATE-SOURCE VOLTAGE
V
GS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
2
103
7
Tch = 25°C
Tch = 25°C
104
7
5
3
2
f = 1MH
Z
V
V
DD = 50V
GS = 10V
5
V
GS = 0V
4
RGEN = RGS = 50Ω
3
2
Ciss
103
7
5
3
2
102
7
t
t
d(off)
d(on)
5
t
t
f
4
r
Coss
Crss
102
7
5
3
2
3
2
101
5 7100 2 3 5 7101 2 3 5 7102 2 3
DRAIN-SOURCE VOLTAGE DS (V)
100
2
3 4 5 7 101
2
3 4 5 7 102
ID (A)
V
DRAIN CURRENT
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS30UM-2
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
20
16
12
8
50
40
30
20
10
0
Tch = 25°C
= 30A
V
GS = 0V
I
D
Pulse Test
V
DS = 20V
TC = 125°C
50V
80V
75°C
25°C
4
0
0
10
20
30
40
50
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE
Q
g
(nC)
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7
5.0
4.0
3.0
2.0
1.0
0
V
GS = 10V
V
DS = 10V
ID = 1mA
I
D
= 1/2I
D
5
Pulse Test
4
3
2
100
7
5
4
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.4
1.2
1.0
0.8
0.6
0.4
101
7
V
I
GS = 0V
D = 1mA
5
D = 1.0
3
2
0.5
100 0.2
7
0.1
5
3
2
P
DM
0.05
0.02
0.01
Single Pulse
10–1
7
tw
T
5
3
2
tw
D
=
T
10–2
–50
0
50
100
150
10–423 5710–323 5710–223 5710–123 57100 23 57101 23 57102
PULSE WIDTH (s)
CHANNEL TEMPERATURE Tch (°C)
tw
Feb.1999
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