FS5KM-14A [MITSUBISHI]
HIGH-SPEED SWITCHING USE; 高速开关使用
| 型号： | FS5KM-14A |
| 厂家： | 
Mitsubishi Group |
| 描述： | HIGH-SPEED SWITCHING USE |
| 文件： | 总4页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI Nch POWER MOSFET
FS5KM-14A
HIGH-SPEED SWITCHING USE
FS5KM-14A
OUTLINE DRAWING
Dimensions in mm
10 ± 0.3
2.8 ± 0.2
φ 3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
2.54 ± 0.25
0.75 ± 0.15
2.54 ± 0.25
1 2 3
w
q GATE
w DRAIN
e SOURCE
¡VDSS ................................................................................700V
¡rDS (ON) (MAX) ................................................................ 2.6Ω
¡ID ............................................................................................ 5A
¡Viso ................................................................................ 2000V
q
e
TO-220FN
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, per-
sonal computer etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Conditions
Ratings
Unit
V
VGS = 0V
VDS = 0V
700
±30
V
5
A
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
IDM
15
30
A
PD
W
°C
°C
Vrms
g
Tch
–55 ~ +150
–55 ~ +150
2000
Tstg
Viso
—
AC for 1minute, Terminal to case
Typical value
Weight
2
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS5KM-14A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol Parameter
Limits
Unit
Test conditions
Min.
700
±30
—
Typ.
—
Max.
—
V
V
(BR) DSS Drain-source breakdown voltage ID = 1mA, VGS = 0V
(BR) GSS Gate-source breakdown voltage IGS = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
Drain-source leakage current VDS = 700V, VGS = 0V
Gate-source threshold voltage ID = 1mA, VDS = 10V
V
V
—
—
IGSS
IDSS
Gate-source leakage current
—
±10
1
µA
mA
V
—
—
VGS (th)
rDS (ON)
VDS (ON)
yfs
2
3
4
Drain-source on-state resistance ID = 2A, VGS = 10V
Drain-source on-state voltage ID = 2A, VGS = 10V
—
2.0
4.0
4.2
770
88
16
15
18
90
25
1.0
—
2.6
5.2
—
Ω
—
V
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
ID = 2A, VDS = 10V
2.5
—
S
Ciss
—
pF
pF
pF
ns
ns
ns
ns
V
Coss
Crss
VDS = 25V, VGS = 0V, f = 1MHz
—
—
—
—
td (on)
tr
—
—
VDD = 200V, ID = 2A, VGS = 10V,
—
—
td (off)
tf
Turn-off delay time
Fall time
RGEN = RGS = 50Ω
—
—
—
—
VSD
Source-drain voltage
Thermal resistance
IS = 2A, VGS = 0V
Channel to case
—
1.5
4.17
Rth (ch-c)
—
°C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
MAXIMUM SAFE OPERATING AREA
50
40
30
20
10
0
3
2
101
7
tw = 10ms
100ms
5
3
2
100
7
1ms
5
3
2
10ms
T
C
= 25°C
100ms
Single Pulse
10–1
7
5
DC
3
0
50
100
150
200
100 2 3 5 7101 2 3 5 7102 2 3 5 7103
CASE TEMPERATURE
TC
(°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
V
GS = 20V
20
16
12
8
5.0
4.0
3.0
2.0
1.0
0
T
C
= 25°C
TC = 25°C
Pulse Test
PD = 30W
10V
Pulse Test
5V
V
GS = 20V
10V
6V
5V
4.5V
4
4V
P
D
= 30W
40
DS (V)
0
0
10
20
30
50
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE
V
DRAIN-SOURCE VOLTAGE
VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS5KM-14A
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
50
40
30
20
10
0
5.0
4.0
3.0
2.0
1.0
0
T
C
= 25°C
T
C
= 25°C
VGS = 10V
Pulse Test
Pulse Test
20V
I
D
= 10A
5A
2A
0
4
8
12
16
20
10–1 2 3 5 7100 2 3 5 7101 2 3 5 7102
GATE-SOURCE VOLTAGE
V
GS (V)
DRAIN CURRENT (A)
ID
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
20
16
12
8
101
7
5
T
C
= 25°C
DS = 50V
Pulse Test
V
TC = 25°C
3
2
75°C
125°C
100
7
5
3
2
4
VDS = 10V
Pulse Test
0
10–1
0
4
8
12
16
20
10–1
2
3
5
7 100
2
3
5
7 101
GATE-SOURCE VOLTAGE
V
GS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
3
2
103
7
5
Tch = 25°C
V
V
DD = 200V
GS = 10V
103
7
Ciss
RGEN = RGS = 50Ω
5
3
2
3
2
102
7
102
7
5
Coss
Crss
t
d(off)
5
3
2
t
f
3
2
t
r
101
7
Tch = 25°C
f = 1MH
Z
t
d(on)
5
3
VGS = 0V
101
2 3 5 7100 2 3 5 7101 2 3 5 7102
2
10–1
2
3
5
7 100
2
3
5
7 101
DRAIN-SOURCE VOLTAGE DS (V)
V
DRAIN CURRENT
ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS5KM-14A
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
20
16
12
8
20
16
12
8
Tch = 25°C
= 5A
V
GS = 0V
I
D
Pulse Test
V
DS = 250V
TC = 125°C
75°C
25°C
400V
600V
4
4
0
0
0
10
20
30
40
50
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE
Q
g
(nC)
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7
5
5.0
4.0
3.0
2.0
1.0
0
VDS = 10V
V
GS = 10V
= 1/2I
Pulse Test
I
D = 1mA
I
D
D
3
2
100
7
5
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.4
1.2
1.0
0.8
0.6
0.4
101
7
5
VGS = 0V
D = 1.0
I
D = 1mA
3
2
0.5
0.2
0.1
100
7
5
3
2
P
DM
0.05
10–1
7
tw
0.02
T
0.01
5
3
2
tw
T
D =
Single Pulse
10–2
10 10 10 10
–423 57 –323 57 –223 57 –123 57100 23 57101 23 57102
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
PULSE WIDTH tw (s)
Feb.1999
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