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FS5VSJ-06-T1 [MITSUBISHI]

Power Field-Effect Transistor, 5A I(D), 60V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN;

FS5VSJ-06-T1


元器件型号：	FS5VSJ-06-T1
生产厂家：	MITSUBISHI ELECTRIC SEMICONDUCTOR
描述和应用：	Power Field-Effect Transistor, 5A I(D), 60V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN 开关脉冲晶体管
PDF文件：	总4页 (文件大小：202K)
下载文档：	下载PDF数据表文档文件
型号参数：FS5VSJ-06-T1参数

FS5VSJ-06-T2

Power Field-Effect Transistor, 5A I(D), 60V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN

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0 MITSUBISHI

FS5VSJ2

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | TO-263AB

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9 ETC

FS5VSJ-2

Power Field-Effect Transistor, 5A I(D), 100V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN

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0 MITSUBISHI

FS5VSJ-2-T1

Power Field-Effect Transistor, 5A I(D), 100V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN

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0 MITSUBISHI

FS5VSJ3

TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 5A I(D) | TO-263AB

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7 ETC

FS5VSJ-3

Power Field-Effect Transistor, 5A I(D), 150V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN

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0 POWEREX

FS5VSJ-3-T1

Power Field-Effect Transistor, 5A I(D), 150V, 0.37ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN

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0 MITSUBISHI

FS600R07A2E3_B32

Insulated Gate Bipolar Transistor, 530A I(C), 650V V(BR)CES, N-Channel, MODULE-33

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5 INFINEON

FS600R07A2E3B31BOSA1

Insulated Gate Bipolar Transistor,

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0 INFINEON

FS6011-02

DIGITAL AUDIO/VIDEO CLOCK GENERATOR IC

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55 ETC

FS6011-02

DIGITAL AUDIO/VIDEO CLOCK GENERATOR IC

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23 ETC

FS6011-02

Processor Specific Clock Generator, 50MHz, CMOS, PDSO16, 0.150 INCH, SOIC-16

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2 AMI

FS6012-02

32MHz, PROC SPECIFIC CLOCK GENERATOR, PDSO16, 0.150 INCH, SOIC-16

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0 ONSEMI

FS6050

LOW-SKEW CLOCK FANOUT BUFFER ICs

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27 ETC

FS6050

LOW-SKEW CLOCK FANOUT BUFFER ICs

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22 ETC

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