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FX20UMJ-06 [MITSUBISHI]

Power Field-Effect Transistor, 20A I(D), 60V, 0.166ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN;
FX20UMJ-06
型号： FX20UMJ-06
厂家： Mitsubishi Group    Mitsubishi Group
描述：

Power Field-Effect Transistor, 20A I(D), 60V, 0.166ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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MITSUBISHI Pch POWER MOSFET  
FX20UMJ-06  
HIGH-SPEED SWITCHING USE  
FX20UMJ-06  
OUTLINE DRAWING  
Dimensions in mm  
4.5  
1.3  
10.5 max  
4
φ 3.6  
1.0  
0.8  
D
2.54  
2.54  
0.5  
2.6  
1
2
3
3
1
2
3
4
GATE  
DRAIN  
SOURCE  
DRAIN  
4V DRIVE  
•
1
VDSS ............................................................... –60V  
rDS (ON) (MAX) ................................................ 97mΩ  
•
•
2
4
ID .................................................................... –20A  
Integrated Fast Recovery Diode (TYP.) ...........50ns  
•
•
TO-220  
APPLICATION  
Motor control, Lamp control, Solenoid control  
DC-DC converter, etc.  
MAXIMUM RATINGS (Tc = 25°C)  
Symbol  
VDSS  
VGSS  
ID  
Parameter  
Drain-source voltage  
Gate-source voltage  
Drain current  
Conditions  
Ratings  
Unit  
V
VGS = 0V  
VDS = 0V  
–60  
±20  
V
–20  
A
IDM  
IDA  
Drain current (Pulsed)  
–80  
A
Avalanche drain current (Pulsed) L = 100µH  
Source current  
–20  
A
IS  
–20  
A
ISM  
Source current (Pulsed)  
Maximum power dissipation  
Channel temperature  
–80  
A
PD  
45  
W
°C  
°C  
g
Tch  
–55 ~ +150  
–55 ~ +150  
2.0  
Tstg  
—
Storage temperature  
Weight  
Typical value  
Jan.1999  
MITSUBISHI Pch POWER MOSFET  
FX20UMJ-06  
HIGH-SPEED SWITCHING USE  
ELECTRICAL CHARACTERISTICS (Tch = 25°C)  
Symbol Parameter  
Limits  
Unit  
Test conditions  
Min.  
–60  
—
Typ.  
—
Max.  
—
ID = –1mA, VGS = 0V  
V
(BR) DSS Drain-source breakdown voltage  
V
µA  
mA  
V
VGS = ±20V, VDS = 0V  
VDS = –60V, VGS = 0V  
ID = –1mA, VDS = –10V  
ID = –10A, VGS = –10V  
ID = –10A, VGS = –4V  
ID = –10A, VGS = –10V  
ID = –10A, VDS = –10V  
IGSS  
IDSS  
Gate-source leakage current  
Drain-source leakage current  
Gate-source threshold voltage  
Drain-source on-state resistance  
Drain-source on-state resistance  
Drain-source on-state voltage  
Forward transfer admittance  
Input capacitance  
—
±0.1  
–0.1  
–2.3  
97  
—
—
VGS (th)  
rDS (ON)  
rDS (ON)  
VDS (ON)  
yfs  
–1.3  
—
–1.8  
73  
mΩ  
mΩ  
V
—
119  
–0.73  
10.9  
2370  
306  
147  
15  
166  
–0.97  
—
—
—
S
Ciss  
—
—
pF  
pF  
pF  
ns  
VDS = –10V, VGS = 0V, f = 1MHz  
Coss  
Crss  
Output capacitance  
—
—
Reverse transfer capacitance  
Turn-on delay time  
—
—
td (on)  
tr  
—
—
Rise time  
—
37  
—
ns  
VDD = –30V, ID = –10A, VGS = –10V, RGEN = RGS = 50Ω  
td (off)  
tf  
Turn-off delay time  
—
131  
72  
—
ns  
Fall time  
—
—
ns  
IS = –10A, VGS = 0V  
Channel to case  
VSD  
Source-drain voltage  
Thermal resistance  
—
–1.0  
—
–1.5  
2.78  
—
V
Rth (ch-c)  
trr  
—
°C/W  
ns  
IS = –20A, dis/dt = 100A/µs  
Reverse recovery time  
—
50  
PERFORMANCE CURVES  
POWER DISSIPATION DERATING CURVE  
MAXIMUM SAFE OPERATING AREA  
–2  
50  
40  
30  
20  
10  
0
–102  
–7  
–5  
tw =  
10µs  
–3  
–2  
–101  
–7  
–5  
100µs  
1ms  
–3  
–2  
TC = 25°C  
Single Pulse  
10ms  
–100  
–7  
–5  
DC  
–3  
–2  
0
1
2
–2 –3 –5–7 –2  
–10  
–2 –3 –5–7  
–10  
–2 –3 –5–7  
–10  
0
50  
100  
150  
200  
CASE TEMPERATURE TC (°C)  
DRAIN-SOURCE VOLTAGE VDS (V)  
OUTPUT CHARACTERISTICS  
(TYPICAL)  
OUTPUT CHARACTERISTICS  
(TYPICAL)  
–50  
–40  
–30  
–20  
–10  
0
–20  
–16  
–12  
–8  
VGS =  
VGS =  
–10V  
–10V  
–8V  
–6V  
–4V  
PD =  
45W  
–8V  
–6V  
–5V  
–4V  
–3V  
Tc = 25°C  
Pulse Test  
PD =  
45W  
Tc = 25°C  
Pulse Test  
–5V  
–3V  
–4  
0
0
–2  
–4  
–6  
–8  
–10  
0
–1.0  
–2.0  
–3.0  
–4.0  
–50  
DRAIN-SOURCE VOLTAGE VDS (V)  
DRAIN-SOURCE VOLTAGE VDS (V)  
Jan.1999  
MITSUBISHI Pch POWER MOSFET  
FX20UMJ-06  
HIGH-SPEED SWITCHING USE  
ON-STATE VOLTAGE VS.  
GATE-SOURCE VOLTAGE  
(TYPICAL)  
ON-STATE RESISTANCE VS.  
DRAIN CURRENT  
(TYPICAL)  
–10  
–8  
–6  
–4  
–2  
0
200  
160  
120  
80  
Tc = 25°C  
Pulse Test  
Tc = 25°C  
Pulse Test  
V
GS = –4V  
–10V  
I
D
= –40A  
40  
–20A  
–10A  
0
0
–2  
–4  
–6  
–8  
–10  
–10–1 –2 –3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102  
GATE-SOURCE VOLTAGE  
V
GS (V)  
DRAIN CURRENT ID (A)  
FORWARD TRANSFER ADMITTANCE  
VS.DRAIN CURRENT  
(TYPICAL)  
TRANSFER CHARACTERISTICS  
(TYPICAL)  
–50  
–40  
–30  
–20  
–10  
0
102  
7
Tc = 25°C  
V
DS = –10V  
V
DS = –10V  
Pulse Test  
5
4
Pulse Test  
3
125°C  
TC =  
75°C  
2
25°C  
101  
7
5
4
3
2
100  
0
–2  
–4  
–6  
–8  
–10  
–100  
–2 –3 –4–5 –7–101  
–2 –3 –4–5 –7–102  
GATE-SOURCE VOLTAGE  
V
GS (V)  
DRAIN CURRENT ID (A)  
CAPACITANCE VS.  
DRAIN-SOURCE VOLTAGE  
(TYPICAL)  
SWITCHING CHARACTERISTICS  
(TYPICAL)  
3
2
3
2
t
d(off)  
Ciss  
103  
7
102  
7
Tch = 25°C  
f = 1MH  
GS = 0V  
t
f
Z
V
5
4
3
5
4
3
t
r
Coss  
2
2
t
d(on)  
102  
7
101  
7
Tch = 25°C  
V
V
GS = –10V  
DD = –30V  
Crss  
5
4
5
4
RGEN = RGS = 50Ω  
3
3
–3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102 –2 –3  
–5 –7–100  
–2 –3 –4–5 –7–101  
–2 –3 –4–5  
DRAIN-SOURCE VOLTAGE  
V
DS (V)  
DRAIN CURRENT ID (A)  
Jan.1999  
MITSUBISHI Pch POWER MOSFET  
FX20UMJ-06  
HIGH-SPEED SWITCHING USE  
GATE-SOURCE VOLTAGE  
VS.GATE CHARGE  
(TYPICAL)  
SOURCE-DRAIN DIODE  
FORWARD CHARACTERISTICS  
(TYPICAL)  
–10  
–8  
–6  
–4  
–2  
0
–50  
–40  
–30  
–20  
–10  
0
Tch = 25°C  
= –20A  
V
GS = 0V  
I
D
Pulse Test  
V
DS =  
–10V  
–20V  
TC =  
125°C  
75°C  
–40V  
25°C  
0
10  
20  
30  
40  
(nC)  
50  
0
–0.4  
–0.8  
–1.2  
–1.6  
–2.0  
GATE CHARGE  
Q
g
SOURCE-DRAIN VOLTAGE VSD (V)  
ON-STATE RESISTANCE VS.  
CHANNEL TEMPERATURE  
(TYPICAL)  
THRESHOLD VOLTAGE VS.  
CHANNEL TEMPERATURE  
(TYPICAL)  
101  
7
–4.0  
–3.2  
–2.4  
–1.6  
–0.8  
0
V
GS = –10V  
V
DS = –10V  
ID = –1mA  
I
D
= 1/2I  
D
5
4
3
Pulse Test  
2
100  
7
5
4
3
2
10–1  
–50  
0
50  
100  
150  
–50  
0
50  
100  
150  
CHANNEL TEMPERATURE Tch (°C)  
CHANNEL TEMPERATURE Tch (°C)  
BREAKDOWN VOLTAGE VS.  
CHANNEL TEMPERATURE  
(TYPICAL)  
TRANSIENT THERMAL IMPEDANCE  
CHARACTERISTICS  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
101  
7
V
I
GS = 0V  
D = –1mA  
5
D = 1.0  
3
2
0.5  
0.2  
100  
7
5
0.1  
3
2
0.05  
P
DM  
0.02  
0.01  
Single Pulse  
10–1  
tw  
7
5
T
tw  
D
=
3
2
T
10–2  
–50  
0
50  
100  
150  
10–42 3 5710–32 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102  
CHANNEL TEMPERATURE Tch (°C)  
PULSE WIDTH tw (s)  
Jan.1999  

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