FX30VSJ-2 [MITSUBISHI]
Power Field-Effect Transistor, 30A I(D), 100V, 0.176ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET;
| 型号： | FX30VSJ-2 |
| 厂家： | 
Mitsubishi Group |
| 描述： | Power Field-Effect Transistor, 30A I(D), 100V, 0.176ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
| 文件： | 总4页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI Pch POWER MOSFET
FX30VSJ-2
HIGH-SPEED SWITCHING USE
FX30VSJ-2
OUTLINE DRAWING
Dimensions in mm
4
10.5 max
4.5
1.3
+0.3
–0
0
1
5
B
0.5
0.8
1
2
3
3
1 GATE
4V DRIVE
•
2
DRAIN
1
3
4
SOURCE
DRAIN
VDSS ............................................................. –100V
•
rDS (ON) (MAX) .............................................. 0.143Ω
•
2
4
ID .................................................................... –30A
Integrated Fast Recovery Diode (TYP.) .........100ns
•
•
TO-220S
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Conditions
Ratings
Unit
VGS = 0V
VDS = 0V
–100
±20
V
V
–30
A
IDM
IDA
Drain current (Pulsed)
–120
A
Avalanche drain current (Pulsed) L = 30µH
Source current
–30
A
IS
–30
A
ISM
Source current (Pulsed)
Maximum power dissipation
Channel temperature
–120
A
PD
70
W
°C
°C
g
Tch
–55 ~ +150
–55 ~ +150
1.2
Tstg
—
Storage temperature
Weight
Typical value
Jan.1999
MITSUBISHI Pch POWER MOSFET
FX30VSJ-2
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol Parameter
Limits
Unit
Test conditions
Min.
–100
—
Typ.
—
Max.
—
ID = –1mA, VGS = 0V
V
(BR) DSS Drain-source breakdown voltage
V
µA
mA
V
VGS = ±20V, VDS = 0V
VDS = –100V, VGS = 0V
ID = –1mA, VDS = –10V
ID = –15A, VGS = –10V
ID = –15A, VGS = –4V
ID = –15A, VGS = –10V
ID = –15A, VDS = –10V
IGSS
IDSS
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
—
±0.1
–0.1
–2.0
0.143
0.176
–2.15
—
—
—
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
–1.0
—
–1.5
0.113
0.135
–1.65
20
Ω
—
Ω
—
V
—
S
Ciss
—
4450
330
170
16
—
pF
pF
pF
ns
ns
ns
ns
V
VDS = –10V, VGS = 0V, f = 1MHz
Coss
Crss
Output capacitance
—
—
Reverse transfer capacitance
Turn-on delay time
—
—
td (on)
tr
—
—
Rise time
—
54
—
VDD = –50V, ID = –15A, VGS = –10V, RGEN = RGS = 50Ω
td (off)
tf
Turn-off delay time
—
270
129
–1.0
—
—
Fall time
—
—
IS = –15A, VGS = 0V
Channel to case
VSD
Source-drain voltage
Thermal resistance
—
–1.5
1.79
—
Rth (ch-c)
trr
—
°C/W
ns
IS = –30A, dis/dt = 100A/µs
Reverse recovery time
—
100
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
MAXIMUM SAFE OPERATING AREA
–3
–2
100
80
60
40
20
0
tw =
10µs
–102
–7
–5
–3
–2
–101
–7
–5
100µs
1ms
–3
–2
10ms
TC = 25°C
Single Pulse
100ms
–100
–7
–5
DC
–3
0
50
100
150
200
–2 –3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102 –2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
–50
–40
–30
–20
–10
0
–20
–16
–12
–8
VGS =
–10V
VGS =
Tc = 25°C
Pulse Test
Tc = 25°C
–10V
Pulse Test
–8V
–6V
–5V
–6V
–4V
–3V
–4V
PD = 70W
–2.5V
–3V
–4
PD = 70W
0
0
–4
–8
–12
–16
–20
0
–2
–4
–6
–8
–10
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Jan.1999
MITSUBISHI Pch POWER MOSFET
FX30VSJ-2
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
–20
–16
–12
–8
200
160
120
80
Tc = 25°C
Pulse Test
VGS = –4V
–10V
ID = –50A
Tc = 25°C
Pulse Test
–30A
–15A
–4
40
0
0
0
–2
–4
–6
–8
–10
–10–1 –2 –3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
–50
–40
–30
–20
–10
0
102
7
5
4
3
TC =
25°C 75°C 125°C
2
Tc = 25°C
VDS = –10V
Pulse Test
101
7
5
4
3
VDS = –10V
Pulse Test
2
100
0
–2
–4
–6
–8
–10
–7–100
–2 –3 –4–5 –7–101
–2 –3 –4–5 –7
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
104
7
5
103
7
Tch = 25°C
VGS = –10V
VDD = –50V
RGEN = RGS = 50Ω
5
Ciss
3
2
3
2
td(off)
tf
Tch = 25°C
VGS = 0V
f = 1MHZ
103
7
5
102
7
3
2
Coss
Crss
5
tr
102
7
5
3
2
td(on)
3
2–3
101–7
–5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102 –2 –3
–100
–2 –3 –4–5 –7–101
–2 –3 –4–5 –7
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
Jan.1999
MITSUBISHI Pch POWER MOSFET
FX30VSJ-2
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
–10
–8
–6
–4
–2
0
–50
–40
–30
–20
–10
0
V
GS = 0V
Pulse Test
V
–20V
DS =
–40V
TC =
–80V
25°C
75°C
Tch = 25°C
= –30A
125°C
I
D
0
20
40
60
80
100
0
–0.4
–0.8
–1.2
–1.6
–2.0
GATE CHARGE
Qg
(nC)
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7
–4.0
–3.2
–2.4
–1.6
–0.8
0
5
3
2
V
DS = –10V
I
D = –1mA
100
7
V
GS = –10V
= 1/2I
Pulse Test
I
D
D
5
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.4
1.2
1.0
0.8
0.6
0.4
102
7
5
3
2
D = 1.0
0.5
101
7
5
0.2
3
2
P
DM
V
GS = 0V
0.1
0.05
0.02
0.01
I
D = –1mA
10–1
tw
7
5
T
tw
D
=
3
2
Single Pulse
T
10–2
–50
0
50
100
150
10–42 3 5710–32 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102
CHANNEL TEMPERATURE Tch (°C)
PULSE WIDTH tw (s)
Jan.1999
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