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FX6UMJ-03 [MITSUBISHI]

Power Field-Effect Transistor, 6A I(D), 30V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN;
FX6UMJ-03
型号： FX6UMJ-03
厂家： Mitsubishi Group    Mitsubishi Group
描述：

Power Field-Effect Transistor, 6A I(D), 30V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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MITSUBISHI Pch POWER MOSFET  
FX6UMJ-03  
HIGH-SPEED SWITCHING USE  
FX6UMJ-03  
OUTLINE DRAWING  
Dimensions in mm  
4.5  
1.3  
10.5 max  
4
φ 3.6  
1.0  
0.8  
D
2.54  
2.54  
0.5  
2.6  
1
2
3
3
1
2
3
4
GATE  
DRAIN  
SOURCE  
DRAIN  
4V DRIVE  
•
1
VDSS ............................................................... –30V  
rDS (ON) (MAX) ................................................ 0.29Ω  
•
•
2
4
ID ...................................................................... –6A  
Integrated Fast Recovery Diode (TYP.) ...........40ns  
•
•
TO-220  
APPLICATION  
Motor control, Lamp control, Solenoid control  
DC-DC converter, etc.  
MAXIMUM RATINGS (Tc = 25°C)  
Symbol  
VDSS  
VGSS  
ID  
Parameter  
Drain-source voltage  
Gate-source voltage  
Drain current  
Conditions  
Ratings  
Unit  
V
VGS = 0V  
VDS = 0V  
–30  
±20  
V
–6  
A
IDM  
IDA  
Drain current (Pulsed)  
–24  
A
Avalanche drain current (Pulsed) L = 30µH  
Source current  
–6  
–6  
A
IS  
A
ISM  
Source current (Pulsed)  
Maximum power dissipation  
Channel temperature  
–24  
A
PD  
20  
W
°C  
°C  
g
Tch  
–55 ~ +150  
–55 ~ +150  
2.0  
Tstg  
—
Storage temperature  
Weight  
Typical value  
Jan.1999  
MITSUBISHI Pch POWER MOSFET  
FX6UMJ-03  
HIGH-SPEED SWITCHING USE  
ELECTRICAL CHARACTERISTICS (Tch = 25°C)  
Symbol Parameter  
Limits  
Unit  
Test conditions  
Min.  
–30  
—
Typ.  
—
Max.  
—
ID = –1mA, VDS = 0V  
V
(BR) DSS Drain-source breakdown voltage  
V
µA  
mA  
V
VGS = ±20V, VDS = 0V  
VDS = –30V, VGS = 0V  
ID = –1mA, VDS = –10V  
ID = –3A, VGS = –10V  
ID = –1A, VGS = –4V  
ID = –3A, VGS = –10V  
ID = –3A, VDS = –5V  
IGSS  
IDSS  
Gate-source leakage current  
Drain-source leakage current  
Gate-source threshold voltage  
Drain-source on-state resistance  
Drain-source on-state resistance  
Drain-source on-state voltage  
Forward transfer admittance  
Input capacitance  
—
±0.1  
–0.1  
–2.3  
0.29  
0.62  
–0.87  
—
—
—
VGS (th)  
rDS (ON)  
rDS (ON)  
VDS (ON)  
yfs  
–1.3  
—
–1.8  
0.23  
0.46  
–0.69  
2.6  
550  
165  
45  
Ω
—
Ω
—
V
—
S
Ciss  
—
—
pF  
pF  
pF  
ns  
ns  
ns  
ns  
V
VDS = –10V, VGS = 0V, f = 1MHz  
Coss  
Crss  
Output capacitance  
—
—
Reverse transfer capacitance  
Turn-on delay time  
—
—
td (on)  
tr  
—
9
—
Rise time  
—
14  
—
VDD = –15V, ID = –3A, VGS = –10V, RGEN = RGS = 50Ω  
td (off)  
tf  
Turn-off delay time  
—
32  
—
Fall time  
—
14  
—
IS = –3A, VGS = 0V  
Channel to case  
VSD  
Source-drain voltage  
Thermal resistance  
—
–1.0  
—
–1.5  
6.25  
—
Rth (ch-c)  
trr  
—
°C/W  
ns  
IS = –3A, dis/dt = 50A/µs  
Reverse recovery time  
—
40  
PERFORMANCE CURVES  
POWER DISSIPATION DERATING CURVE  
MAXIMUM SAFE OPERATING AREA  
40  
32  
24  
16  
8
–102  
–7  
–5  
–3  
–2  
tw = 10µs  
100µs  
–101  
–7  
–5  
–3  
–2  
1ms  
–100  
–7  
–5  
10ms  
TC = 25°C  
DC  
Single Pulse  
–3  
–2  
0
–10–1  
0
50  
100  
150  
200  
–2 –3 –5 –7–100 –2 –3 –5 –7–101 –2 –3 –5 –7–102 –2  
CASE TEMPERATURE TC (°C)  
DRAIN-SOURCE VOLTAGE VDS (V)  
OUTPUT CHARACTERISTICS  
(TYPICAL)  
OUTPUT CHARACTERISTICS  
(TYPICAL)  
–10  
–8  
–6  
–4  
–2  
0
–5.0  
–4.0  
–3.0  
–2.0  
–1.0  
0
Tc = 25°C  
Pulse Test  
–6V  
VGS = –10V  
–7V  
–5V  
–8V  
–7V  
–6V  
–8V  
VGS = –10V  
–5V  
–4V  
PD = 20W  
Tc = 25°C  
Pulse Test  
–4V  
–3V  
–3V  
0
–1.0  
–2.0  
–3.0  
–4.0  
–5.0  
0
–0.4  
–0.8  
–1.2  
–1.6  
–2.0  
DRAIN-SOURCE VOLTAGE VDS (V)  
DRAIN-SOURCE VOLTAGE VDS (V)  
Jan.1999  
MITSUBISHI Pch POWER MOSFET  
FX6UMJ-03  
HIGH-SPEED SWITCHING USE  
ON-STATE VOLTAGE VS.  
GATE-SOURCE VOLTAGE  
(TYPICAL)  
ON-STATE RESISTANCE VS.  
DRAIN CURRENT  
(TYPICAL)  
–5.0  
–4.0  
–3.0  
–2.0  
–1.0  
0
1.0  
0.8  
0.6  
0.4  
0.2  
0
Tc = 25°C  
Pulse Test  
V
GS = –4V  
Tc = 25°C  
Pulse Test  
ID =  
–10A  
–10V  
–6A  
–3A  
–1A  
0
–2  
–4  
–6  
–8  
–10  
–10–1 –2 –3 –5 –7–100 –2 –3 –5–7–101 –2 –3 –5 –7–102  
GATE-SOURCE VOLTAGE  
VGS (V)  
DRAIN CURRENT ID (A)  
FORWARD TRANSFER ADMITTANCE  
VS.DRAIN CURRENT  
(TYPICAL)  
TRANSFER CHARACTERISTICS  
(TYPICAL)  
–10  
–8  
–6  
–4  
–2  
0
101  
7
Tc = 25°C  
VDS = –5V  
Pulse Test  
VDS = –10V  
5
4
3
Pulse Test  
125°C  
TC = 25°C 75°C  
2
100  
7
5
4
3
2
10–1  
0
–2  
–4  
–6  
–8  
–10  
–10–1 –2 –3 –5 –7 –100  
–2 –3 –5 –7 –101  
GATE-SOURCE VOLTAGE  
VGS (V)  
DRAIN CURRENT ID (A)  
CAPACITANCE VS.  
DRAIN-SOURCE VOLTAGE  
(TYPICAL)  
SWITCHING CHARACTERISTICS  
(TYPICAL)  
2
102  
7
104  
7
5
t
d(off)  
5
Tch = 25°C  
f = 1MH  
GS = 0V  
3
2
3
2
Z
V
t
f
103  
7
t
d(on)  
101  
7
5
Ciss  
3
2
5
t
r
Coss  
Crss  
102  
7
5
3
2
Tch = 25°C  
GS = –10V  
DD = –15V  
V
V
R
3
2–3  
GEN = RGS = 50Ω  
100  
–5 –7 –100 –2 –3 –5 –7 –101 –2  
3
–5 –7 –102 –2 –3  
–7 –10–1 –2 –3  
–5 –7–100  
–2 –3 –5 –7  
DRAIN-SOURCE VOLTAGE  
V
DS (V)  
DRAIN CURRENT ID (A)  
Jan.1999  
MITSUBISHI Pch POWER MOSFET  
FX6UMJ-03  
HIGH-SPEED SWITCHING USE  
GATE-SOURCE VOLTAGE  
VS.GATE CHARGE  
(TYPICAL)  
SOURCE-DRAIN DIODE  
FORWARD CHARACTERISTICS  
(TYPICAL)  
–10  
–8  
–6  
–4  
–2  
0
–20  
–16  
–12  
–8  
V
GS = 0V  
Tch = 25°C  
= -6A  
Pulse Test  
I
D
V
DS = –10V  
–20V  
–25V  
TC =  
25°C  
75°C  
125°C  
–4  
0
0
4
8
12  
16  
20  
0
–0.4  
–0.8  
–1.2  
–1.6  
–2.0  
GATE CHARGE  
Qg  
(nC)  
SOURCE-DRAIN VOLTAGE VSD (V)  
ON-STATE RESISTANCE VS.  
CHANNEL TEMPERATURE  
(TYPICAL)  
THRESHOLD VOLTAGE VS.  
CHANNEL TEMPERATURE  
(TYPICAL)  
101  
7
–4.0  
–3.2  
–2.4  
–1.6  
–0.8  
0
V
GS = –10V  
V
DS = –10V  
ID = –1mA  
I
D
= 1/2I  
D
5
4
3
Pulse Test  
2
100  
7
5
4
3
2
10–1  
–50  
0
50  
100  
150  
–50  
0
50  
100  
150  
CHANNEL TEMPERATURE Tch (°C)  
CHANNEL TEMPERATURE Tch (°C)  
BREAKDOWN VOLTAGE VS.  
CHANNEL TEMPERATURE  
(TYPICAL)  
TRANSIENT THERMAL IMPEDANCE  
CHARACTERISTICS  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
102  
7
5
V
I
GS = 0V  
D = –1mA  
3
2
101  
7
5
D = 1.0  
0.5  
0.2  
3
2
P
DM  
0.1  
0.05  
0.02  
0.01  
100  
7
5
tw  
T
tw  
D
=
3
2
T
Single Pulse  
10–1  
–50  
0
50  
100  
150  
10–42 3 5710–32 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102  
CHANNEL TEMPERATURE Tch (°C)  
PULSE WIDTH tw (s)  
Jan.1999  

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