M5M54R01J-12 [MITSUBISHI]

4194304-BIT (4194304-WORD BY 1-BIT) CMOS STATIC RAM; 4194304 - BIT ( 4194304 - WORD BY 1位) CMOS静态RAM
M5M54R01J-12
型号: M5M54R01J-12
厂家: Mitsubishi Group    Mitsubishi Group
描述:

4194304-BIT (4194304-WORD BY 1-BIT) CMOS STATIC RAM
4194304 - BIT ( 4194304 - WORD BY 1位) CMOS静态RAM

存储 内存集成电路 静态存储器 光电二极管
文件: 总6页 (文件大小:58K)
中文:  中文翻译
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MITSUBISHI LSIs  
M5M54R01J-12,-15  
1997.11.20 Rev.F  
4194304-BIT (4194304-WORD BY 1-BIT) CMOS STATIC RAM  
DESCRIPTION  
The M5M54R01J is a family of 4194304-word by 1-bit static  
RAMs, fabricated with the high performance CMOS silicon gate  
process and designed for high speed application.  
The M5M54R01J is offered in a 32-pin plastic small outline J-  
lead package(SOJ).  
PIN CONFIGURATION (TOP VIEW)  
A0  
1
2
32 A21  
31 A20  
A1  
A2  
A3  
A4  
address  
inputs  
30  
address  
inputs  
3
4
5
A19  
A18  
A17  
29  
28  
27  
These device operate on a single 5V supply, and are directly  
TTL compatible. They include a power down feature as well.  
FEATURES  
A5  
S
VCC  
GND  
D
6
7
8
A16  
chip select  
input  
output enable  
input  
(0V)  
26  
25  
24  
OE  
GND  
VCC  
(5V)  
• Fast access time  
M5M54R01J-12 •••• 12ns(max)  
M5M54R01J-15 •••• 15ns(max)  
(0V)  
9
(5V)  
data outputs  
data inputs  
10  
23 Q  
• Low power dissipation  
Active •••••••••• 450mW(typ)  
Stand by •••••••••• 5mW(typ)  
22  
11  
12  
13  
A15  
write control  
input  
W
A6  
A7  
A8  
A9  
A10  
21  
A14  
A13  
A12  
address  
inputs  
• Single +5V power supply  
• Fully static operation : No clocks, No refresh  
• Test mode is available  
20  
19  
address  
inputs  
14  
15  
16  
18 A11  
17  
• Easy memory expansion by S  
byte control  
input  
B1/B4  
• Three-state outputs : OR-tie capability  
• OE prevents data contention in the I/O bus  
• Directly TTL compatible : All inputs and outputs  
Outline 32P0K(SOJ)  
PACKAGE  
32pin 400mil SOJ  
APPLICATION  
High-speed memory units  
BLOCK DIAGRAM  
A0  
1
2
A1  
A2  
3
MEMORY ARRAY  
512 ROWS  
8192 COLUMNS  
A3  
A4  
A5  
data  
outputs  
4
address  
inputs  
Q
23  
5
6
A6  
A7  
A8  
12  
13  
14  
COLUMN I/O CIRCUITS  
S
7
data  
inputs/  
D
10  
COLUMN ADDRESS  
DECODERS  
W
11  
8
VCC(5V)  
GND(0V)  
COLUMN INPUT BUFFERS  
24  
OE 26  
B1/B4 17  
9
25  
15 16 18  
29 30 31 32  
19 20 21 22 27 28  
A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 A20 A21  
address inputs  
MITSUBISHI  
ELECTRIC  
1
MITSUBISHI LSIs  
M5M54R01J-12,-15  
4194304-BIT (4194304-WORD BY 1-BIT) CMOS STATIC RAM  
FUNCTION  
The operation mode of the M5M54R01J is determined by a  
combination of the device control inputs S, W and OE. Each  
mode is summarized in the function table.  
A write cycle is executed whenever the low level W overlaps  
with the low level S. The address must be set-up before the  
write cycle and must be stable during the entire cycle.  
The data is latched into a cell on the trailing edge of W or S,  
whichever occurs first, requiring the set-up and hold time  
relative to these edge to be maintained. The output enable  
input OE directly controls the output stage. Setting the OE at a  
high level, the output stage is in a high impedance state, and  
the data bus  
A read cycle is excuted by setting W at a high level and OE  
at a low level while S are in an active state (S=L).  
When setting S at high level, the chip is in a non-selectable  
mode in which both reading and writing are disable. In this  
mode, the output stage is in a high-impedance state, allowing  
OR-tie with other chips and memory expansion by S.  
Signal-S controls the power-down feature. When S goes  
high, power dissapation is reduced extremely. The access  
time from S is equivalent to the address access time.  
The RAM works with an organization of 4194304-word by 1  
bit,when B1/B4 is low of floating. And an organization of 1048  
576-word by 4bit is also obtained for reducing the test time,  
when B1/B4 is high.  
contention problem in the write cycle is eliminated.  
FUNCTION TABLE  
Mode  
Non selection  
Write  
D
Q
Icc  
W
X
L
S
H
L
OE  
X
High-impedance  
Stand by  
High-impedance  
High-impedance  
Din  
Active  
Active  
Active  
X
Read  
High-impedance  
High-impedance  
L
L
H
H
L
Dout  
High-impedance  
H
ABSOLUTE MAXIMUM RATINGS  
Parameter  
Supply voltage  
Conditions  
With respect to GND  
Ta=25 C  
Ratings  
-3.5* ~ 7  
-3.5 * ~ VCC+0.3  
-3.5 * ~ VCC+0.3  
1000  
Unit  
V
Symbol  
Vcc  
VI  
Input voltage  
V
V
VO  
Output voltage  
Pd  
Power dissipation  
Operating temperature  
Storage temperature(bias)  
Storage temperature  
mW  
C
Topr  
0 ~ 70  
Tstg(bias)  
-10 ~ 85  
C
T
stg  
-65 ~ 150  
C
*Pulse width 20ns, In case of DC:-0.5V  
(Ta=0 ~ 70 C, Vcc=5V±10% unless otherwise noted)  
DC ELECTRICAL CHARACTERISTICS  
Limits  
Condition  
Symbol  
Parameter  
Unit  
Typ  
Max  
Min  
VIH  
VIL  
VOH  
VOL  
I I  
V
V
V
V
High-level input voltage  
Low-level input voltage  
High-level output voltage  
Low-level output voltage  
Input current  
Vcc+0.3  
0.8  
2.2  
-0.3  
2.4  
IOH =-4mA  
IOL= 8mA  
VI = 0~Vcc  
0.4  
2
µA  
VI (S)= VIH  
VO= 0~Vcc  
µA  
I OZ  
Output current in off-state  
10  
12ns cycle  
15ns cycle  
160  
VI (S)= VIL  
other inputs VIH or VIL  
Output-open(duty 100%)  
Active supply current  
(TTL level)  
AC  
DC  
mA  
I CC1  
150  
100  
75  
90  
12ns cycle  
15ns cycle  
Stand by current  
(TTL level)  
AC  
DC  
mA  
mA  
I CC2  
VI (S)= VIH  
70  
50  
VI (S)= Vcc0.2V  
other inputs VI0.2V  
or VIVcc-0.2V  
I CC3 Stand by current  
1
10  
MITSUBISHI  
ELECTRIC  
2
MITSUBISHI LSIs  
M5M54R01J-12,-15  
4194304-BIT (4194304-WORD BY 1-BIT) CMOS STATIC RAM  
CAPACITANCE (Ta=0 ~ 70 C, Vcc=5V±10% unless otherwise noted)  
Limit  
Typ  
Symbol  
Parameter  
Test Condition  
Unit  
Min  
Max  
8
CI  
Input capacitance  
Output capacitance  
pF  
pF  
V I =GND, V I =25mVrms,f=1MHz  
CO  
VO  
=25mVrms,f=1MHz  
8
VO=GND,  
Note 1: Direction for current flowing into an IC is positive (no mark).  
2: Typical value is Vcc=5V,Ta=25 C  
3: CI,CO are periodically sampled and are not 100% tested.  
(Ta=0 ~ 70 C, Vcc=5V±10% unless otherwise noted)  
AC ELECTRICAL CHARACTERISTICS  
(1)MEASUREMENT CONDITION  
Input pulse levels  
V
IH=3.0V, V IL =0.0V  
••••••••••••••••••••••••  
Input rise and fall time  
3ns  
••••••••••••••••••••••••••••••••••••••  
Input timing reference levels •••••••••••• V IH=1.5V, V IL=1.5V  
Output timing reference levels ••••••••••VOH=1.5V, V OL =1.5V  
Output loads •••••••••••••••••••••••••••••••••••••••••• Fig1 ,Fig2  
Vcc  
Z0=50Ω  
OUTPUT  
480Ω  
DQ  
5pF  
(including  
scope and JIG)  
RL=50Ω  
255Ω  
VL=1.5V  
Fig.1 Output load  
Fig.2 Output load for t en, t dis  
MITSUBISHI  
ELECTRIC  
3
MITSUBISHI LSIs  
M5M54R01J-12,-15  
4194304-BIT (4194304-WORD BY 1-BIT) CMOS STATIC RAM  
(2)READ CYCLE  
Limits  
M5M54R01J -12  
M5M54R01J -15  
Parameter  
Unit  
Symbol  
Max  
Max  
Min  
12  
Min  
15  
tCR  
Read cycle time  
Address access time  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ta(A)  
ta(S)  
12  
12  
6
15  
15  
8
Chip select access time  
(OE)  
ta  
Output enable access time  
Output disable time after S high  
Output disable time after OE high  
Output enable time after S low  
Output enable time after OE low  
Data valid time after address change  
Power-up time after chip selection  
Power-down time after chip selection  
tdis(S)  
0
0
0
0
3
6
0
0
0
0
3
7
(OE)  
tdis  
6
7
ten(S)  
ten(OE)  
tv(A)  
tPU  
tPD  
0
0
12  
15  
(3)WRITE CYCLE  
Limits  
M5M54R01J -12  
M5M54R01J -15  
Parameter  
Symbol  
Unit  
ns  
Min  
12  
Max  
Max  
Min  
15  
tCW  
Write cycle time  
(W)  
tw  
Write pulse width  
Address setup time(W)  
ns  
ns  
ns  
10  
0
12  
0
tsu(A)1  
tsu(A)2  
Address setup time(S)  
0
0
10  
6
(S)  
tsu  
Chip select setup time  
Data setup time  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
12  
7
(D)  
tsu  
th(D)  
Data hold time  
0
0
(W)  
trec  
Write recovery time  
1
1
(W)  
Output disable time after W low  
Output disable time after OE high  
Output enable time after W high  
tdis  
0
6
6
0
7
7
tdis (OE)  
ten (W)  
0
0
0
0
(OE)  
ten  
Output enable time after OE low  
Address to W High  
ns  
ns  
0
0
tsu(A-WH)  
12  
10  
MITSUBISHI  
ELECTRIC  
4
MITSUBISHI LSIs  
M5M54R01J-12,-15  
4194304-BIT (4194304-WORD BY 1-BIT) CMOS STATIC RAM  
(4)TIMING DIAGRAMS  
Read cycle 1  
t CR  
VIH  
A
0~21  
VIL  
(A)  
ta  
(A)  
tv  
(A)  
tv  
VOH  
VOL  
Q
PREVIOUS DATA VALID  
UNKNOWN  
DATA VALID  
W=H  
S=L  
OE=L  
Read cycle 2 (Note 4)  
t CR  
VIH  
S
VIL  
(Note 5)  
(S)  
(S)  
tdis  
ta  
(Note 5)  
ten(S)  
VOH  
UNKNOWN  
DATA VALID  
Q
VOL  
tPU  
tPD  
ICC1  
50%  
50%  
Icc  
ICC2  
W=H  
OE=L  
Note 4. Addresses valid prior to or coincident with S transition low.  
5. Transition is measured ±500mv from steady state voltage with specified loading in Figure 2.  
Read cycle 3 (Note 6)  
t CR  
VIH  
VIL  
OE  
(Note 5)  
(OE)  
tdis(OE)  
ta  
(Note 5)  
ten(OE)  
VOH  
VOL  
UNKNOWN  
DATA VALID  
Q
W=H  
S=L  
Note 6. Addresses and S valid prior to OE transition low by (ta(A)-ta(OE)), (ta(S)-ta(OE))  
MITSUBISHI  
ELECTRIC  
5
MITSUBISHI LSIs  
M5M54R01J-12,-15  
4194304-BIT (4194304-WORD BY 1-BIT) CMOS STATIC RAM  
Write cycle ( W control mode )  
tCW  
VIH  
A
S
0~21  
VIL  
(S)  
tsu  
VIH  
VIL  
(Note7)  
(Note7)  
(A-WH)  
tsu  
VIH  
VIL  
OE  
W
(A)  
tsu  
tw(W)  
trec(W)  
VIH  
VIL  
(D)  
(D)  
th  
tsu  
VIH  
VIL  
D
Q
DATA STABLE  
(Note 5)  
(W)  
tdis  
(Note 5)  
(OE)  
ten  
(OE)  
ten(W)  
tdis  
VOH  
VOL  
Hi-Z  
Write cycle (S control mode )  
tCW  
VIH  
0~21  
A
S
VIL  
(S)  
tsu  
tw  
(W)  
(A)  
trec  
tsu  
VIH  
VIL  
(W)  
VIH  
VIL  
W
D
(Note7)  
(Note7)  
(D)  
(D)  
tsu  
th  
VIH  
VIL  
DATA STABLE  
(W)  
tdis  
(S)  
ten  
(Note5)  
VOH  
VOL  
(Note5)  
Hi-Z  
Q
(Note8)  
Note 7: Hatching indicates the state is don't care.  
8: When the falling edge of W is simultaneous or prior to the falling edge of S, the output is maintained in the high impedance.  
9: ten,tdis are periodically sampled and are not 100% tested.  
MITSUBISHI  
ELECTRIC  
6

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