MITSUBISHI LSIs
M5M54R01J-12,-15
4194304-BIT (4194304-WORD BY 1-BIT) CMOS STATIC RAM
FUNCTION
The operation mode of the M5M54R01J is determined by a
combination of the device control inputs S, W and OE. Each
mode is summarized in the function table.
A write cycle is executed whenever the low level W overlaps
with the low level S. The address must be set-up before the
write cycle and must be stable during the entire cycle.
The data is latched into a cell on the trailing edge of W or S,
whichever occurs first, requiring the set-up and hold time
relative to these edge to be maintained. The output enable
input OE directly controls the output stage. Setting the OE at a
high level, the output stage is in a high impedance state, and
the data bus
A read cycle is excuted by setting W at a high level and OE
at a low level while S are in an active state (S=L).
When setting S at high level, the chip is in a non-selectable
mode in which both reading and writing are disable. In this
mode, the output stage is in a high-impedance state, allowing
OR-tie with other chips and memory expansion by S.
Signal-S controls the power-down feature. When S goes
high, power dissapation is reduced extremely. The access
time from S is equivalent to the address access time.
The RAM works with an organization of 4194304-word by 1
bit,when B1/B4 is low of floating. And an organization of 1048
576-word by 4bit is also obtained for reducing the test time,
when B1/B4 is high.
contention problem in the write cycle is eliminated.
FUNCTION TABLE
Mode
Non selection
Write
D
Q
Icc
W
X
L
S
H
L
OE
X
High-impedance
Stand by
High-impedance
High-impedance
Din
Active
Active
Active
X
Read
High-impedance
High-impedance
L
L
H
H
L
Dout
High-impedance
H
ABSOLUTE MAXIMUM RATINGS
Parameter
Supply voltage
Conditions
With respect to GND
Ta=25 C
Ratings
-3.5* ~ 7
-3.5 * ~ VCC+0.3
-3.5 * ~ VCC+0.3
1000
Unit
V
Symbol
Vcc
VI
Input voltage
V
V
VO
Output voltage
Pd
Power dissipation
Operating temperature
Storage temperature(bias)
Storage temperature
mW
C
Topr
0 ~ 70
Tstg(bias)
-10 ~ 85
C
T
stg
-65 ~ 150
C
*Pulse width ≤ 20ns, In case of DC:-0.5V
(Ta=0 ~ 70 C, Vcc=5V±10% unless otherwise noted)
DC ELECTRICAL CHARACTERISTICS
Limits
Condition
Symbol
Parameter
Unit
Typ
Max
Min
VIH
VIL
VOH
VOL
I I
V
V
V
V
High-level input voltage
Low-level input voltage
High-level output voltage
Low-level output voltage
Input current
Vcc+0.3
0.8
2.2
-0.3
2.4
IOH =-4mA
IOL= 8mA
VI = 0~Vcc
0.4
2
µA
VI (S)= VIH
VO= 0~Vcc
µA
I OZ
Output current in off-state
10
12ns cycle
15ns cycle
160
VI (S)= VIL
other inputs VIH or VIL
Output-open(duty 100%)
Active supply current
(TTL level)
AC
DC
mA
I CC1
150
100
75
90
12ns cycle
15ns cycle
Stand by current
(TTL level)
AC
DC
mA
mA
I CC2
VI (S)= VIH
70
50
VI (S)= Vcc≥0.2V
other inputs VI≤0.2V
or VI≥Vcc-0.2V
I CC3 Stand by current
1
10
MITSUBISHI
ELECTRIC
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