M63823FP [MITSUBISHI]
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE; 7 -UNIT 500毫安达林顿晶体管阵列钳位二极管
| 型号： | M63823FP |
| 厂家： | 
Mitsubishi Group |
| 描述： | 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE |
| 文件： | 总4页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63823P/FP/GP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
DESCRIPTION
PIN CONFIGURATION
M63823P, M63823FP and M63823GP are seven-circuit
Darlington transistor arrays with clamping diodes. The cir-
cuits are made of NPN transistors. Both the semi-conductor
integrated circuits perform high-current driving with ex-
tremely low input-current supply.
→
→
→
→
→
IN1→
IN2→
IN3→
IN4→
IN5→
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
O1
O2
O3
O4
O5
INPUT
OUTPUT
Production lineup has been newly expanded with the addi-
tion of 225mil (GP) package.
→
IN6
→O6
→O7
M63823P and M63823FP have the same pin connection as
M54523P and M54523FP. (Compatible with M54523P and
M54523FP) More over, the features of M63823P and
M63823FP are equal or superior to those of M54523P and
M54523FP.
IN7→
GND
→COM COMMON
16P4(P)
16P2N-A(FP)
Package type 16P2S-A(GP)
FEATURES
●
Three package configurations (P, FP and GP)
● Pin connection Compatible with M54523P and M54523FP
CIRCUIT DIAGRAM
●
High breakdown voltage (BVCEO ≥ 50V)
●
High-current driving (IC(max) = 500mA)
COM
● With clamping diodes
OUTPUT
●
PMOS Compatible input
2.7k
INPUT
●
Wide operating temperature range (Ta = –40 to +85°C)
APPLICATION
7.2k
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and MOS-bipolar logic IC inter-
faces
3k
GND
The seven circuits share the COM and GND
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
FUNCTION
The M63823P, M63823FP and M63823GP each have seven
circuits consisting of NPN Darlington transistors. These ICs
have resistance of 2.7kΩ between input transistor bases and
input pins. A spike-killer clamping diode is provided between
each output pin (collector) and COM pin (pin 9). The output
transistor emitters are all connected to the GND pin (pin 8).
The collector current is 500mA maximum. Collector-emitter
supply voltage is 50V maximum.The M63823FP and
M63823GP is enclosed in molded small flat package, en-
abling space-saving design.
Unit : Ω
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol
VCEO
IC
Parameter
Collector-emitter voltage
Collector current
Conditions
Ratings
Unit
Output, H
–0.5 ~ +50
V
mA
V
500
–0.5 ~ +30
500
Current per circuit output, L
VI
Input voltage
mA
V
IF
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
50
VR
1.47(P)/1.00(FP)/0.80(GP)
–40 ~ +85
Pd
Ta = 25°C, when mounted on board
W
°C
°C
Topr
Tstg
Operating temperature
Storage temperature
–55 ~ +125
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63823P/FP/GP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C)
Limits
typ
Symbol
VO
Parameter
Unit
V
min
0
max
50
Output voltage
—
Duty Cycle
Collector current
(Current per 1 cir-
cuit when 7 circuits
are coming on si-
multaneously)
P : no more than 8%
FP : no more than 5%
GP : no more than 4%
0
0
—
—
400
200
IC
mA
Duty Cycle
P : no more than 30%
FP : no more than 20%
GP : no more than 15%
IC ≤ 400mA
IC ≤ 200mA
3.85
3.4
0
—
—
—
25
25
“H” input voltage
“L” input voltage
VIH
VIL
V
V
0.6
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol Parameter Test conditions
Limits
typ
Unit
V
min
50
max
—
V
(BR) CEO Collector-emitter breakdown voltage ICEO = 100µA
—
II = 500µA, IC = 350mA
—
1.2
1.0
0.9
0.9
1.4
—
1.6
1.3
1.1
1.4
2.0
100
—
—
VCE(sat)
II = 350µA, IC = 200mA
II = 250µA, IC = 100mA
VI = 3.85V
V
Collector-emitter saturation voltage
—
II
Input current
—
mA
V
VF
IR
Clamping diode forward volltage
Clamping diode reverse current
DC amplification factor
IF = 350mA
—
VR = 50V
—
µA
—
hFE
1000
2000
VCE = 4V, IC = 350mA
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol Parameter Test conditions
Limits
typ
Unit
min
—
max
—
ton
toff
Turn-on time
Turn-off time
15
ns
ns
CL = 15pF (note 1)
—
350
—
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
INPUT
50%
Vo
INPUT
50%
Measured device
RL
OPEN
OUTPUT
PG
OUTPUT
50%
50%
CL
50Ω
ton
toff
(1)Pulse generator (PG) characteristics : PRR=1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω
VP
= 3.85VP-P
(2)Input-output conditions : R
(3)Electrostatic capacity C includes floating capacitance
at connections and input capacitance at probes
L
= 25Ω, Vo = 10V
L
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63823P/FP/GP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
Output Saturation Voltage
Collector Current Characteristics
Thermal Derating Factor Characteristics
2.0
500
400
300
200
100
I
I
= 500µA
M63823P
1.5
M63823FP
1.0
0.744
M63823GP
0.5
0.520
0.418
Ta = 25°C
Ta = 85°C
Ta = –40°C
0
0
0
1.0
1.5
2.0
0
25
50
75 85 100
0.5
Ambient temperature Ta (°C)
Output saturation voltage VCE(sat) (V)
Duty Cycle-Collector Characteristics
(M63823P)
Duty Cycle-Collector Characteristics
(M63823P)
500
400
300
200
100
500
400
300
200
100
0
1
1
2
3
2
4
5
6
7
3
4
5
6
7
•The collector current values
represent the current per circuit.
•Repeated frequencyy ≥ 10Hz
•The value the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the
value of the simultaneously-operated circuit.
•Ta = 85°C
0
0
100
20
40
60
80
0
100
20
40
60
80
Duty cycle (%)
Duty cycle (%)
Duty Cycle-Collector Characteristics
(M63823FP)
Duty Cycle-Collector Characteristics
(M63823FP)
500
400
300
200
100
0
500
400
300
200
100
0
1
1
2
2
3
4
5
3
4
5
7
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
6
•
The collector current values
7
represent the current per circuit.
Repeated frequency ≥ 10Hz
The value the circle represents the
6
•
•
value of the simultaneously-operated circuit.
•Ta = 85°C
0
100
20
40
60
80
0
100
20
40
60
80
Duty cycle (%)
Duty cycle (%)
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63823P/FP/GP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
Duty Cycle-Collector Characteristics
(M63823GP)
Duty Cycle-Collector Characteristics
(M63823GP)
500
400
300
500
400
300
200
1
2
1
2
200
100
3
4
•The collector current values
3
4
6
5
7
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
•
The collector current values
6
100
0
represent the current per circuit.
Repeated frequency ≥ 10Hz
5
7
•
•
The value the circle represents the
value of the simultaneously-operated circuit.
•Ta = 85°C
0
100
100
20
40
Duty cycle (%)
DC Amplification Factor
60
80
0
20
40
Duty cycle (%)
Grounded Emitter Transfer Characteristics
500
60
80
0
Collector Current Characteristics
104
VCE = 4V
7
5
Ta = 85°C
400
3
2
300
200
100
0
103
Ta = –40°C
Ta= 25°C
7
5
Ta = 85°C
Ta = 25°C
3
2
Ta = –40°C
102
102
103
5 7
0
101
2
3
5
7
2
3
1
2
3
4
5
Collector current Ic
C
(mA)
Input voltage VI (V)
Input Characteristics
Clamping Diode Characteristics
16
12
8
500
400
Ta = –40°C
Ta = 25°C
300
200
100
Ta = 25°C
4
Ta = 85°C
Ta = 85°C
Ta = –40°C
0
0
0
5
10
15
25
20
0
1.0
1.5
2.0
0.5
Input voltage V
I
(V)
Forward bias voltage VF (V)
Jan. 2000
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