M68732 [MITSUBISHI]
SILICON MOS FET POWER AMPLIFIER, 520-530MHz, 6.5W, FM PORTABLE RADIO; 硅MOS场效应管功率放大器， 520-530MHz ， 6.5W ， FM PORTABLE RADIO
| 型号： | M68732 |
| 厂家： | 
Mitsubishi Group |
| 描述： | SILICON MOS FET POWER AMPLIFIER, 520-530MHz, 6.5W, FM PORTABLE RADIO |
| 文件： | 总2页 (文件大小：34K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI RF POWER MODULE
M68732EH
SILICON MOS FET POWER AMPLIFIER, 520-530MHz, 6.5W, FM PORTABLE RADIO
Dimensions in mm
OUTLINE DRAWING
BLOCK DIAGRAM
30±0.2
2
3
26.6±0.2
21.2±0.2
2-R1.5±0.1
1
4
5
5
1
2
3
4
0.45
6±1
13.7±1
18.8±1
23.9±1
PIN:
1
2
3
4
5
Pin : RF INPUT
VGG : GATE BIAS SUPPLY
VDD : DRAIN BIAS SUPPLY
PO : RF OUTPUT
GND: FIN
H46
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Symbol
VDD
Parameter
Conditions
Ratings
Unit
V
Supply voltage
Gate bias voltage
Input power
VGG£3.5V, ZG=ZL=50W
9.2
4
VGG
V
Pin
f=520-530MHz, ZG=ZL=50W
f=520-530MHz, ZG=ZL=50W
f=520-530MHz, ZG=ZL=50W
70
10
mW
W
PO
Output power
TC (OP)
Operation case temperature
Storage temperature
-30 to +100
-40 to +110
°C
°C
Tstg
Note. Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25°C,ZG=ZL=50Wunless otherwise noted)
Symbol Parameter Test conditions
Limits
Unit
Min
Max
530
f
Frequency range
Output power
Total efficiency
520
6.5
MHz
W
PO
hT
VDD=7.2V,
VGG=3.5V,
Pin=50mW
35
%
2nd. harmonic
Input VSWR
2fO
r in
-25
4
dBc
-
ZG=50W, VDD=4-9.2V,
Load VSWR<4:1
No parasitic oscillation
-
-
-
-
Stability
No degradation or
destroy
VDD=9.2V, Pin=50mW,
PO=6.5W (VGG adjust), ZL=20:1
Load VSWR tolerance
Note. Above parameters, ratings, limits and test conditions are subject to change.
Nov. ´97
MITSUBISHI RF POWER MODULE
M68732EH
SILICON MOS FET POWER AMPLIFIER, 520-530MHz, 6.5W, FM PORTABLE RADIO
TYPICAL PERFORMANCE DATA
OUTPUT POWER, INPUT VSWR,
TOTAL EFFICIENCY VS. FREQUENCY
OUTPUT POWER, TOTAL EFFICIENCY
VS. INPUT POWER
10
8
70
60
50
40
30
20
10
8
100
80
60
40
20
0
VGG=3.5V, VDD=7.2V
Pin=17dBm
VGG=3.5V
VDD=7.2V
Pin=17dBm
PO (fL)
PO (fH)
PO
6
6
4
4
hT
r in
hT (fL)
hT (fH)
2
2
0
0
-5
490 500 510 520 530 540 550 560
0
5
10
15
20
FREQUENCY f (MHz)
INPUT POWER Pin (dBm)
OUTPUT POWER, TOTAL EFFICIENCY
VS. GATE VOLTAGE
OUTPUT POWER, TOTAL EFFICIENCY
VS. SUPPLY VOLTAGE
10
100
14
10
8
80
60
50
40
30
20
10
VDD=7.2V
VDD=7.2V
Pin=17dBm
fL=520MHz
fH=530MHz
Pin=17dBm
fL=520MHz
fH=530MHz
8
6
4
2
0
80
60
40
20
0
hT (fL)
PO (fL)
PO (fH)
6
4
hT (fH)
hT (fL)
hT (fH)
2
PO (fL)
PO (fH)
0
1
1.5
2
2.5
3
3.5
4
3
4
5
6
7
8
9
GATE VOLTAGE VGG (V)
SUPPLY VOLTAGE VDD (V)
Nov. ´97
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