M6MGB166S4BWG [MITSUBISHI]

CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP; CMOS 3.3V -ONLY闪存和CMOS SRAM堆叠CSP
M6MGB166S4BWG
型号: M6MGB166S4BWG
厂家: MITSUBISHI ELECTRIC SEMICONDUCTOR    MITSUBISHI ELECTRIC SEMICONDUCTOR
描述:

CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP
CMOS 3.3V -ONLY闪存和CMOS SRAM堆叠CSP

闪存 存储 内存集成电路 静态存储器
文件: 总30页 (文件大小:260K)
下载:  下载PDF数据表文档文件

M6MGB166S4BWG-85

Memory Circuit, 1MX16, CMOS, PBGA72, 0.80 MM PITCH, CSP-72

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0 MITSUBISHI

M6MGB166S4BWG-90

Memory Circuit, 1MX16, CMOS, PBGA72, 0.80 MM PITCH, CSP-72

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0 MITSUBISHI

M6MGB331S4BKT

33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B

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17 RENESAS

M6MGB331S8AKT

33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI

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11 RENESAS

M6MGB331S8BKT

33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI

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12 RENESAS

M6MGB641S8AKT

M6MGB641S8AKT

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1 RENESAS

M6MGB647M17AKT

M6MGB647M17AKT

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0 RENESAS

M6MGB647M34CKT

M6MGB647M34CKT

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0 RENESAS

M6MGB64BM17AWG

M6MGB64BM17AWG

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0 RENESAS

M6MGB64BM34CWG

M6MGB64BM34CWG

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0 RENESAS

M6MGB64BS8AWG-P

M6MGB64BS8AWG-P

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0 RENESAS

M6MGB64BS8BWG

SPECIALTY MEMORY CIRCUIT, PBGA67, 0.80 MM PITCH, LEAD FREE, STACKED, CSP-67

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0 RENESAS

M6MGB64BS8BWG-P

SPECIALTY MEMORY CIRCUIT, PBGA67, 0.80 MM PITCH, STACKED, CSP-67

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0 RENESAS

M6MGD137W34DKT

M6MGD137W34DKT

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0 RENESAS

M6MGD137W34DWG

134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM

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36 RENESAS