M6MGT166S2BWG-90 [MITSUBISHI]

Memory Circuit, 1MX16, CMOS, PBGA72, 0.80 MM PITCH, CSP-72;
M6MGT166S2BWG-90
型号: M6MGT166S2BWG-90
厂家: MITSUBISHI ELECTRIC SEMICONDUCTOR    MITSUBISHI ELECTRIC SEMICONDUCTOR
描述:

Memory Circuit, 1MX16, CMOS, PBGA72, 0.80 MM PITCH, CSP-72

静态存储器 内存集成电路
文件: 总30页 (文件大小:248K)
下载:  下载PDF数据表文档文件

M6MGT166S4BWG

16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY

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35 MITSUBISHI

M6MGT166S4BWG

CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP

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37 MITSUBISHI

M6MGT166S4BWG

CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP

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24 MITSUBISHI

M6MGT166S4BWG-85

暂无描述

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0 MITSUBISHI

M6MGT331S4BKT

33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B

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25 RENESAS

M6MGT331S8AKT

33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI

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9 RENESAS

M6MGT331S8BKT

33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI

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10 RENESAS

M6MGT33BS8AWG-P

M6MGT33BS8AWG-P

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0 RENESAS

M6MGT33BS8BWG

M6MGT33BS8BWG

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0 RENESAS

M6MGT33BS8BWG-P

M6MGT33BS8BWG-P

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0 RENESAS

M6MGT641S8BKT

SPECIALTY MEMORY CIRCUIT, PDSO52, 0.40 MM PITCH, LEAD FREE, TSOP2-52

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0 RENESAS

M6MGT647M17AKT

M6MGT647M17AKT

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M6MGT647M34CKT

M6MGT647M34CKT

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M6MGT64BM17AWG

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0 RENESAS

M6MGT64BM17AWG-P

M6MGT64BM17AWG-P

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0 RENESAS