MF31M1-LSDATXX [MITSUBISHI]
8/16-bit Data Bus Static RAM Card; 8位/ 16位数据总线静态RAM卡
| 型号： | MF31M1-LSDATXX |
| 厂家： | 
Mitsubishi Group |
| 描述： | 8/16-bit Data Bus Static RAM Card |
| 文件： | 总11页 (文件大小：258K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
MF365A-LCDATXX
MF365A-LSDATXX
MF3129-LCDATXX
MF3129-LSDATXX
MF3257-LCDATXX
MF3257-LSDATXX
MF3513-LCDATXX
MF3513-LSDATXX
MF31M1-LCDATXX
MF31M1-LSDATXX
MF32M1-LCDATXX
MF32M1-LSDATXX
MF34M1-LCDATXX
MF34M1-LSDATXX
8/16-bit Data Bus
Static RAM Card
C o n n e c t o r T y p e
Two- piece 68-pin
DESCRIPTION
Electrostatic discharge protectiton to 15kV
Buffered interface
68-pin connector
8-bit and 16-bit data width
Write protect switch
Battery voltage pin
Mitsubishi’s Static RAM cards provide large
memory capacities on a device approximately the
size of a credit card(85.6mm´ 54mm´ 3.3mm).
The cards use a 8/16 bit data bus.The devices
use a replaceable lithium battery to maintain data.
Available in 64K byte-4M byte capacities,
Mitsubishi’s Static RAM cards are available with
a 68-pin, two-piece connector.
LS Type Wide Range operating temperature
Ta= -20 to 70°C
APPLICATIONS
FEATURES
Office automation
Computers
Data Communications
Industrial
Uses TSOP (Thin Small Outline Package) to
achieve very high memory density coupled
with high reliability, without enlarging card
size
Telecommunications
Consumer
PRODUCT LIST
Item
Memory
capacity
64KB
128KB
256KB
512KB
1MB
Data Bus
Attribute
memory
Auxialiary
battery
Memory
Outline
drawing
Main battery
holder
Type name
width(bits)
organization
MF365A-LCDATXX
MF3129-LCDATXX
MF3257-LCDATXX
MF3513-LCDATXX
MF31M1-LCDATXX
MF32M1-LCDATXX
MF34M1-LCDATXX
MF365A-LSDATXX
MF3129-LSDATXX
MF3257-LSDATXX
MF3513-LSDATXX
MF31M1-LSDATXX
MF32M1-LSDATXX
MF34M1-LSDATXX
256K bit SRAM´ 2
256K bit SRAM´ 4
1M bit SRAM´ 2
1M bit SRAM´ 4
1M bit SRAM´ 8
1M bit SRAM´ 16
4M bit SRAM´ 8
256K bit SRAM´ 2
256K bit SRAM´ 4
1M bit SRAM´ 2
1M bit SRAM´ 4
1M bit SRAM´ 8
1M bit SRAM´ 16
4M bit SRAM´ 8
2MB
4MB
8/16
NO
NO
68P-003
Screw type
64KB
128KB
256KB
512KB
1MB
2MB
4MB
MITSUBISHI
ELECTRIC
1/11
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
PIN ASSIGNMENT
Two-Piece Type (68-pin)
Pin
Pin
No.
Function
Symbol
Function
Symbol
No.
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
GND
CD1#
D11
D12
D13
D14
D15
CE2#
NC
Ground
1
GND
D3
Ground
Card detect 1
2
3
D4
4
D5
Data I/O
Data I/O
5
D6
6
D7
7
CE1#
A10
OE#
A11
A9
Card enable 1
Address input
Output enable
Card enable 2
8
9
NC
No connection
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
NC
A17
A18
A19
A20
A21
VCC
NC
A17(NC for£ 128KB types)
A18(NC for£ 256KB types)
A19(NC for£ 512KB types)
A20(NC for£ 1MB types)
A21(NC for£ 2MB types)
Power supply voltage
No connection
A8
Address input
A13
A14
WE#
NC
VCC
NC
A16
A15
A12
A7
Address input
Write enable
No connection
Power supply voltage
No connection
NC
No connection
A16(NC for 64KB type)
NC
NC
NC
NC
No connection
A6
NC
A5
Address input
NC
A4
NC
A3
REG#
BVD2
BVD1
D8
REG function
A2
Battery voltage detect 2
Battery voltage detect 1
A1
A0
D0
D9
Data I/O
D1
Data I/O
D10
CD2#
GND
D2
Card detect 2
Ground
WP
GND
Write protect
Ground
WRITE PROTECT MODE (WP)
When the write protect switch is switched on, this
card goes into a write protect mode that can read
but not write data.
In this mode, the WP pin becomes “H” level.
At the shipment the write protect switch is switched
off (Normal mode : The card can be written ; WP pin
indicates “L” level).
MITSUBISHI
ELECTRIC
2/11
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
BLOCK DIAGRAM (4MB)
A21
A20
A0
ADDRESS-
DECODER
8
A19
A18
A17
A16
A15
A14
A13
A12
A11
A10
A9
D15
D14
D13
D12
CS#
COMMON
MEMORY
D11
D10
D9
D8
D7
D6
D5
D4
D3
D2
D1
D0
ADDRESS-
BUS
BUFFERS
16
19
A8
DATA-BUS
BUFFERS
A7
4Mbit SRAM´ 8
A6
A5
A4
A3
A2
A1
OE#
WE#
CE1#
CE2#
MODE
CONTROL
LOGIC
WE#
OE#
REG#
WP#
TO INTERNAL
POWER
WRITE PROTECT
OFF
VCC
VOLTAGE DETECTOR
&
POWER CONTROLLER
ON
BVD2
BVD1
CD1#
CD2#
GND
BR2325
FUNCTION TABLE
Mode
I/O (D15~D8)
High-impedance
Odd Byte Data out
Odd Byte Data in
High-impedance
High-impedance
High-impedance
High-impedance
Odd Byte Data out
Odd Byte Data in
High-impedance
Data out (unknown)
High-impedance
High-impedance
Data out (unknown)
I/O (D7~D0)
IC C
R E G #
C E 1 #
C E 2 #
O E #
W E #
A 0
Standby
X
H
H
H
H
H
H
H
H
X
L
H
H
X
X
X
High-impedance
Standby
Active
Active
Active
Active
Active
Active
Active
Active
Active
Active
Active
Active
Active
Read A (16bit) common
Write A (16bit) common
Read B (8bit) common
L
L
L
L
L
L
H
H
X
L
L
L
H
L
L
L
H
L
L
H
H
L
H
H
L
L
L
L
H
L
X
X
L
Even Byte Data out
Even Byte Data in
Even Byte Data out
Odd Byte Data out
Even Byte Data in
Odd Byte Data in
High-impedance
High-impedance
High-impedance
Data out (FFh)
H
H
H
H
L
H
H
L
H
L
Write B (8bit) common
L
H
X
X
X
X
L
Read C (8bit) common
Write C (8bit) common
Output disable
H
L
L
X
L
H
H
H
H
H
Read A (16bit) attribute
Read B (8bit) attribute
L
H
H
L
Data out (FFh)
L
H
X
Data out (unknown)
High-impedance
Read C (8bit) attribute
L
Note 1 : H=VIH, L=VIL, X=VIH or VIL
MITSUBISHI
ELECTRIC
3/11
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
ABSOLUTE MAXIMUM RATINGS
Symbol
VCC
Parameter
Supply voltage
Input voltage
Output voltage
Operating temperature 1
Conditions
With respect to GND
Read, Write, Operation
Data retention
Ratings
-0.3~6.0
-0.3~VCC+0.3
0~VCC
LC series 0~70
LS series -20~70
LC series 0~70
LS series -20~70
-30~80
Unit
V
V
Vi
Vo
V
Topr1
°C
°C
°C
°C
°C
Topr2
Tstg
Operating temperature 2
Storage temperature
RECOMMENDED OPERATING CONDITIONS (LC series Ta= 0~55°C, unless otherwise noted)
(LS series Ta=-20~70°C, unless otherwise noted)
Limits
Parameter
VCC Supply voltage
System ground
High input voltage
Low input voltage
Symbol
Unit
Min.
4.50
Typ.
5.0
0
Max.
5.25
VCC
GND
VIH
V
V
V
V
3.5
0
VCC
0.8
VIL
MITSUBISHI
ELECTRIC
4/11
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
ELECTRICAL CHARACTERISTICS (LC series Ta= 0~55°C, VCC=4.50~5.25V, unless otherwise noted)
(LS series Ta=-20~70°C, VCC=4.50~5.25V, unless otherwise noted)
Limits
Min. Typ. Max.
Parameter
Symbol
Test conditions
Unit
VOH
VOL
IIH
High output voltage
Low output voltage
High input current
Low input current
IOH=-1.0mA
IOL=1mA
VI=VCC V
VI=0V
2.4
0.4
10
V
V
µA
µA
IIL
CE1#, CE2#, WE#, OE#, REG#
Other inputs
-10
-70
-10
10
IOZH
IOZL
High output current
in off state
Low output current
in off state
CE1#=CE2#=VIH or OE#=VIH WE#=VIH,
VO=VCC
CE1#=CE2#=VIH or OE#=VIH WE#=VIH,
VO=0V
µA
µA
-10
64KB~1MB
CE1#=CE2#=VIL
16bit
8bit
150
110
160
120
200
160
140
100
150
110
190
150
10
ICC 1 • 1
Active supply
current 1
Other inputs VIH or VIL
Outputs=open
2MB
16bit
8bit
mA
Cycle time=250ns
4MB
16bit
8bit
64KB~1MB
2MB
16bit
8bit
CE1#=CE2# £ 0.2V
ICC 1 • 2
ICC 2 • 1
Active supply
current 2
Other inputs £ 0.2V or
16bit
8bit
mA
mA
³
VC C -0.2V
Outputs=open
4MB
16bit
8bit
Cycle time=250ns
Standby supply current 1
Standby supply current 2
CE1#=CE2#=VIH
Other inputs=VIH or VIL
CE1#=CE2# ³ VCC-0.2V
Other inputs £ 0.2V or
³ VCC-0.2V
64KB,128KB
256KB~1MB
2MB,4MB
0.15
0.15
0.30
0.30
0.45
0.65
ICC 2 • 2
VBDET1
VBDET2
mA
V
Battery detect
Vcc=5V,Ta=25°C
2.37 2.47
2.27
2.55
reference voltage 1¬
Battery detect
Vcc=5V,Ta=25°C
V
2.65
2.75
reference voltage 2¬
Note 2 : Currents flowing into the IC are taken as positive (unsigned).
3 : Typical values are measured at VCC=5V, Ta=25°C.
¬Pin asserted when battery voltage drops below specified level.
MITSUBISHI
ELECTRIC
5/11
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
CAPACITANCE
Limits
Min. Typ. Max.
Test conditions
Parameter
Symbol
Unit
CI
Input capacitance
VI=GND, VI=25mVrms
64KB~2MB
4MB
64KB~2MB
4MB
45
30
45
20
pF
f=1 MHZ, Ta=25°C
VO=GND, VO=25mVrms,
f=1 MHZ, Ta=25°C
CO
Output capacitance
pF
Note 4 : These parameters are not 100% tested.
SWITCHING CHARACTERISTICS
Read Cycle (LC series Ta= 0~55°C, VCC=4.50~5.25V, unless otherwise noted)
(LS series Ta=-20~70°C, VCC=4.50~5.25V, unless otherwise noted)
Limits
Typ.
Min.
200
Max.
Symbol
tCR
Parameter
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Read cycle time
ta (A)
Address access time
200
200
100
90
ta (CE)
ta (OE)
tdis(CE)
tdis(OE)
ten(CE)
ten(OE)
tV(A)
Card enable access time
Output enable accese time
Output disable time (from CE#)
Output disable time (from OE#)
Output enable time (from CE#)
Output enable time (from OE#)
Data valid time (after address change)
90
5
5
0
TIMING REQUIREMENTS
Write Cycle(LC series Ta= 0~55°C, VCC=4.50~5.25V, unless otherwise noted)
(LS series Ta=-20~70°C, VCC=4.50~5.25V, unless otherwise noted)
Limits
Typ.
Min.
200
120
20
Max.
Symbol
Parameter
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tCW
Write cycle time
tw(WE)
Write pulse width
Address set up time
tsu(A)
tsu(A-WEH)
tsu(CE-WEH)
tsu(D-WEH)
th(D)
Address set up time with respect to WE# high
Card enable set up time with respect to WE# high
Data set up time with respect to WE# high
Data hold time
140
140
60
30
trec(WE)
tdis(WE)
tdis(OE)
Write recovery time
30
Output disable time (from WE#)
Output disable time (from OE#)
Output enable time (from WE#)
90
90
ten(WE)
5
5
ten(OE)
Output enable time (from OE#)
tsu(OE-WE)
th(OE-WE)
OE# set up time with respect to WE# low
OE# hold time with respect to WE# high
10
10
MITSUBISHI
ELECTRIC
6/11
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
TIMING DIAGRAM
tCR
Read Cycle
VIH
An
VIL
VIH
ta(A)
ta(CE)
tV(A)
CE#
VIL
tdis(CE)
ten(CE)
ta(OE)
VIH
OE#
VIL
ten(OE)
tdis(OE)
VOH
Dm
(DOUT)
Hi-Z
OUTPUT VALID
VOL
WE#=“H” level
REG#=“H” level
Note 5 :
Indicates the don’t care input
Write Cycle (WE# control)
tCW
VIH
An
VIL
tSU(CE-WEH)
tSU(A-WEH)
VIH
CE#
VIL
VIH
OE#
VIL
tW(WE)
tSU(A)
trec(WE)
VIH
WE#
VIL
th(OE-WE)
th(D)
tSU(OE-WE)
tSU(D-WEH)
VIH
VIL
Dm
(DIN)
Hi-Z
DATA INPUT STABLE
tdis(WE)
tdis(OE)
ten(OE)
ten(WE)
VOH
VOL
Hi-Z
Dm
(DOUT)
REG#=“H” level
MITSUBISHI
ELECTRIC
7/11
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
Write Cycle (CE# control)
tCW
VIH
An
VIL
tSU(CE-WEH)
tSU(A)
trec(WE)
VIH
CE#
VIL
VIH
WE#
VIL
th(D)
tSU(D-WEH)
VIH
Hi-Z
Dm
DATA INPUT STABLE
(DIN)
VIL
OE#=“H” level
REG#=“H” level
SWITCHING CHARACTERISTICS (Attribute)
Read Cycle(LC series Ta= 0~55°C, VCC=4.50~5.25V, unless otherwise noted)
(LS series Ta=-20~70°C, VCC=4.50~5.25V, unless otherwise noted)
Limits
Min. Typ. Max. Unit
Symbol
tCRR
ta(A)R
ta(CE)R
ta(OE)R
tdis(CE)R
tdis(OE)R
ten(CE)R
ten(OE)R
tV(A)R
Parameter
Read cycle time
300
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address access time
Card enable access time
Output enable access time
300
300
150
100
100
Output disable time (from CE#)
Output disable time (from OE#)
Output enable time (from CE#)
Output enable time (from OE#)
Data valid time after address change
5
5
0
MITSUBISHI
ELECTRIC
8/11
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
TIMING DIAGRAM (Attribute)
tCRR
Read Cycle
VIH
An
VIL
ta(A)R
ta(CE)R
tV(A)R
VIH
CE#
VIL
tdis(CE)R
ten(CE)R
ta(OE)R
VIH
OE#
VIL
ten(OE)R
tdis(OE)R
VOH
Hi-Z
Dm
OUTPUT VALID
(DOUT)
VOL
WE#=“H” level
REG#=“L” level
Note 6 : Test Conditions
Input pulse levels : VI L =0.4V, VI H =4.0V
Input pulse rise, fall time : tr=tf=10ns
Reference voltage
Input :
VI L =0.8V, VI H =3.5V
Output : VO L =0.8V, VO H =3.0V
(ten and tdis are measured when output voltage is± 500mV from steady state. )
100pF+1 TTL gate
Load :
5pF+1 TTL gate (at ten and tdis measuring)
7 : Writing is executed in overlap of CE# and WE# are “L” level. (only for Common Memory)
8 : Don’t apply inverted phase signal externally when Dm pin is in output mode.
9 : CE# is indicated as follows:
Read A/Write A : CE#=CE1#=CE2#
Read B/Write B : CE#=CE1#, CE2#=“H” level
Read C/Write C : CE#=CE2#, CE1#=“H” level
MITSUBISHI
ELECTRIC
9/11
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
ELECTRICAL CHARACTERISTICS
BATTERY BACKUP (LC series Ta= 0~55°C, unless otherwise noted)
(LS series Ta=-20~70°C, unless otherwise noted)
Limits
Typ.
Symbol
VBATT
VI(CE)
Parameter
Back-up enable battery voltage
Card enable voltage
Test Conditions
All pins open
2.4V£VCC£5.25V
0V£VCC<2.4V
Min.
2.6
2.4
Max.
Unit
V
V
VCC-0.1
VCC
VCC+0.1
64KB
128KB
256KB
512KB
1MB
3
5
3
5
9
All pins open,
VBATT=3V,
Ta=25°C
ICC(BUP)
ICC(BUP)
Battery back-up supply current
Battery back-up supply current
mA
mA
2MB
4MB
17
9
64KB
128KB
256KB
512KB
1MB
40
70
100
200
400
800
400
All pins open,
VBATT=3V
2MB
4MB
TIMING REQUIREMENTS (LC series Ta= 0~55°C, unless otherwise noted)
(LS series Ta=-20~70°C, unless otherwise noted)
Limits
Min. Typ. Max. Unit
Symbol
tpr
tpf
tsu(VCC)
trec(VCC)
Parameter
Power supply rise time
Power supply fall time
Set up time at power on
Recovery time at power off
0.1
3
300
300
ms
ms
ms
ns
20
1000
MITSUBISHI
ELECTRIC
10/11
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
CARD INSERTION/REMOVAL TIMING DIAGRAM
VCC MIN means Minimum Operating Voltage=4.75V.
tpf
tpr
VCC
VCC
VCC MIN
VCC MIN
90%
90%
trec(VCC)
tsu(VCC)
VIH
VIH
10%
10%
CE1#,
CE2#
CE1,
CE2
Note 10: When the card is holding valuable data, the battery must not be removed unless VCC is
present.
BATTERY SPECIFICATIONS
A replaceable battery (type BR2325) with a capacity of 165mAH is used:
Estimated battery life when the card is left continuously.
MF365A-LC/LSDATXX
MF3129-LC/LSDATXX
MF3257-LC/LSDATXX
MF3513-LC/LSDATXX
MF31M1-LC/LSDATXX
MF32M1-LC/LSDATXX
MF34M1-LC/LSDATXX
5.9years
3.6years
5.9years
3.6years
2.0years
1.1years
2.0years
Conditions
Temperature : 25°C
Humidity :
60%RH
MITSUBISHI
ELECTRIC
11/11
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