MF32M1-J9CATXX [MITSUBISHI]
8/16-bit Data Bus Static RAM Card; 8位/ 16位数据总线静态RAM卡
| 型号： | MF32M1-J9CATXX |
| 厂家： | 
Mitsubishi Group |
| 描述： | 8/16-bit Data Bus Static RAM Card |
| 文件： | 总14页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
MF365A-J9CATXX
8/16-bit Data Bus
Static RAM Card
MF3129-J9CATXX
MF3257-J9CATXX
MF3513-J9CATXX
MF31M1-J9CATXX
MF32M1-J9CATXX
MF34M1-J9CATXX
Connector Type
Two- piece 68-pin
1. DESCRIPTION
2. FEATURES
Mitsubishi’s Static RAM cards provide large memory
capacities on a device approximately the size of a
credit card (85.6mm´ 54mm´ 3.3mm). The cards use
a 8/16 bit data-bus.
nUses TSOP (Thin Small Outline Package) to
achieve very high memory density coupled with
high reliability, without enlarging card size
nElectrostatic discharge protection to 15kV
nBuffered interface
nWrite protect switch
n68pin
nBuilt-in auxiliary battery
Available in 64KB, 128KB, 256KB, 512KB,
1 MB, 2 MB and 4 MB capacities, Mitsubishi’s
SRAM cards conform to the PC Card Standard.
Mitsubishi achieved high density memory, while
maintaining credit size by using a thin small outline
packaging technology (TSOP). The TSOP surpasses
conventional memory card chip-on-board packaging
technology where larger, surface-mount devices
result in a tradeoff between card size and optimum
memory density. The TSOP, with external leads
spaced on 20-mil centers, is over four times smaller
than standard equivalent pin count surface-mount
packages. This allows up to 8 memory ICs (plus
interface circuitry) to be mounted in a card that in
only 3.3mm thick.
3. APPLICATIONS
nOffice automation
nComputers
nData Communication
nIndustrial
nTelecommunications nConsumer
4. PRODUCT LIST
Item
Memory
capacity
64KB
Data Bus
width(bits)
Attribute
memory
Auxiliary
battery
Type name
MF365A-J9CATXX
MF3129-J9CATXX
MF3257-J9CATXX
MF3513-J9CATXX
MF31M1-J9CATXX
MF32M1-J9CATXX
MF34M1-J9CATXX
128KB
256KB
512KB
1MB
2MB
4MB
8/16
NO
YES
MITSUBISHI
ELECTRIC
1/14
Apr. 1999 Rev. 1.1
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
5. SUMMARY
MF3XXX-J9CATXX series is the Static RAM cards which has 8/16 bit changeable data-bus width.
The card has a replaceable lithium main battery to maintain data in memory and has an auxiliary battery to
maintain data in memory while the main battery is replaced. When the card is not use or the supply voltage
drops, the main battery will automatically maintain data in memory.
6. FUNCTIONAL DESCRIPTION
The function of the card is determined by the combination of the following five control signals,
REG#, CE1#, CE2#, OE#, WE#; active low signals. (Please refer to section 10 FUNCTION TABLE on page 5)
(1)COMMON MEMORY FUNCTION
When REG# signal is high level, the common memory area is selected.
(a)READ MODE
To read, WE# is set high level and CE1# or CE2# is set low level and the memory address is applied at inputs
A0-A21(4MB). Setting OE# low level executes the reading with output at data-bus. It is available to make the
following functions according to the combination of CE1# and CE2#.
When CE1# is set low level and CE2# is set high level, the card operates as an 8 bit data-bus width card.
The data can be dealt with lower data-bus(D0-D7).
When both CE1# and CE2# are set low level, the card operates as a 16 bit data-bus width card.
At this mode LSB of address-bus (A0) is ignored.
In addition odd byte can be accessed through upper data-bus(D8-D15) when CE1# is set high level and CE2# is
set low level. This mode is useful when handling only odd bytes in the 16 bit data-bus interface system (A0 is
ignored).
When both CE1# and CE2# are set high level, the card becomes a standby mode where the card consumes
low power and the data-bus is placed in high impedance state (above functions of CE1# and CE2# are the same
as in the following modes).
When both OE# and WE# are set high level, the card becomes a output disable mode and the data-bus is
placed in high impedance state.
(b)WRITE MODE
To write, the memory address is first applied at inputs A0-A21(4MB) and the data is applied at output pins.
Setting CE1# or CE2# low level, WE# low level and OE# high level executes the writing.
(2)ATTRIBUTE MEMORY FUNCTION
When REG# is set low level, the attribute memory area is selected. MF3XXX-J9CATXX series have no
attribute memory but outputs FFh on the lower data-bus(D0-D7) when the following conditions are applied
(a)setting CE1# low, CE2# high, OE# low, WE# high and A0 low
(b)setting CE1# low, CE2# low, OE# low and WE# high
(3)BATTERY
When the card is used for long periods of time, eventually battery exhaustion occurs. If such a situation is
encountered, replace any exhausted battery with a new one as directed in section 21.2 ²REPLACING BATTERY²
(page 14).
The replacement battery model number is indicated under section 21 ²BATTERY SPECIFICATIONS²(page 14).
7. WRITE PROTECT MODE
When the write protect switch is switched on, this card goes into a write protect mode that can read but not
write data. In this mode, WP pin becomes “H” level.
At the shipment the write protect switch is switched off (Normal mode : The card can be written ; WP pin
indicates “L” level).
MITSUBISHI
ELECTRIC
2/14
Apr. 1999 Rev. 1.1
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
8. PIN ASSIGNMENTS
Pin
No.
1
2
3
4
5
6
Pin
No.
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
Function
Symbol
Function
Symbol
GND Ground
D3
D4
D5
D6
D7
CE1# Card enable 1
A10 Address input
OE# Output enable
A11
A9
A8
GND Ground
CD1# Card detect 1
D11
D12
D13
D14
D15
Data I/O
Data I/O
7
8
9
CE2# Card enable 2
NC
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
NC
NC
No connection
Address input
A17
A18
A19
A20
A21
VCC
NC
NC
NC
NC
NC
A17 (NC for < 128KB types)
A18 (NC for < 256KB types)
A19 (NC for < 512KB types) Address
A20 (NC for < 1MB type)
A21 (NC for < 2MB type)
Power supply voltage
A13
A14
WE# Write enable
NC No connection
VCC Power supply voltage
input
NC
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
D0
D1
D2
WP
No connection
A16 (NC for 64KB type)
No connection
NC
NC
NC
NC
Address input
REG# Attribute memory select
BVD2 Battery voltage detect 2
BVD1 Battery voltage detect 1
D8
Data I/O
D9
D10
Data I/O
Write protect
CD2# Card detect 2
GND Ground
GND Ground
MITSUBISHI
ELECTRIC
3/14
Apr. 1999 Rev. 1.1
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
9 . BLOCK DIAGRAM (4MB) (MF34M1-J9CATXX)
A21
ADDRESS-
DECODER
A20
8
A0
A19
A18
A17
A16
A15
A14
A13
D15
D14
D13
D12
D11
D10
D9
D8
D7
CS#
COMMON
MEMORY
A12
ADDRESS-
BUS
BUFFERS
A11
19
16
A10
A9
DATA-BUS
BUFFERS
A8
A7
A6
A5
A4
A3
4Mbit SRAM´ 8
OE#
WE#
D6
D5
D4
D3
D2
D1
D0
A2
A1
CE1#
CE2#
MODE
CONTROL
LOGIC
WE#
OE#
2
REG#
WP#
TO INTERNAL
POWER SUPPLY
WRITE PROTECT
OFF
VCC
VOLTAGE DETECTOR
ON
&
BVD2
BVD1
POWER CONTROLLER
Auxiliary
battery
CR2025
CD1#
CD2#
GND
MITSUBISHI
ELECTRIC
4/14
Apr. 1999 Rev. 1.1
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
10. FUNCTION TABLE
Mode REG# CE1# CE2#
Standby
Read A (16bit)
common
OE#
X
L
WE# A0
I/O (D15~D8)
High-impedance High-impedance
I/O (D7~D0)
Icc
standby
Active
X
H
H
L
H
L
X
H
X
X
Odd Byte
Data out
Odd Byte
Data in
High-impedance Even Byte
Data out
Even Byte
Data out
Even Byte
Data in
Write A (16bit)
common
Read B (8bit)
common
H
H
H
L
L
L
L
H
H
H
L
L
L
H
H
X
L
Active
Active
Active
H
High-impedance Odd Byte
Data out
H
H
H
L
L
H
H
H
L
H
H
L
L
L
H
L
H
X
High-impedance Even Byte Data in Active
High-impedance Odd Byte Data in Active
Write B (8bit)
common
Read C (8bit)
common
Write C (8bit)
common
Odd Byte
Data out
Odd Byte
Data in
High-impedance
Active
H
H
L
H
L
X
High-impedance
Active
Output disable
Read A (16bit)
attribute
X
L
X
L
X
L
H
L
H
H
X
X
High-impedance High-impedance
Active
Active
Data out
Data out
(FFh)
(unknown)
L
L
L
L
L
H
H
H
L
L
L
L
H
H
H
L
H
X
High-impedance Data out
(FFh)
High-impedance Data out
Active
Active
Active
Read B (8bit)
attribute
(unknown)
Read C (8bit)
attribute
Data out
High-impedance
(unknown)
Note 1 : H=VIH, L=VIL, X=VIH or VIL
11. ABSOLUTE MAXIMUM RATINGS
Symbol Parameter
Supply voltage
Conditions
Ratings
-0.3~6.0
-0.3~VCC+0.3
0~VCC
Unit
V
V
Vcc
VI
Input voltage
With respect to GND
VO
Output voltage
V
Topr1
Topr2
Tstg
Operating temperature 1
Operating temperature 2
Storage temperature
Read, Write Operation
Data retention
Excludes data retention
0~60
0~60
-20~70
°C
°C
°C
12. RECOMMENDED OPERATING CONDITIONS (Ta=0~55°C, unless otherwise noted)
Limits
Parameter
Symbol
Unit
Min.
4.75
Typ.
5.0
0
Max.
5.25
Vcc
GND
VIH
VIL
Vcc Supply voltage
System ground
High input voltage
Low input voltage
V
V
V
V
2.4
0
VCC
0.8
MITSUBISHI
ELECTRIC
5/14
Apr. 1999 Rev. 1.1
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
13. ELECTRICAL CHARACTERISTICS (Ta=0~55°C, Vcc=5V±5%, unless otherwise noted)
Symbol
Parameter
Test conditions
Limits
Typ.
Unit
Min.
2.4
Max.
VOH
VOL
IIH
High output voltage IOH= -1.0mA
V
V
µA
µA
Low output voltage
High input current
Low input current
IOL=2mA
VI=Vcc V
VI=0V
0.4
10
-70
-10
10
IIL
CE1#, CE2#, WE#, OE#, REG#
Other inputs
-10
IOZH
High output current CE1#=CE2#=VIH or OE#=VIH WE#=VIH,
in off state
Low output current
in off state
µA
µA
VO=Vcc
IOZL
CE1#=CE2#=VIH or OE#=VIH WE#=VIH,
VO=0V
-10
Icc 1 • 1
Icc 1 • 2
Active supply
current 1
Active supply
current 2
CE1#=CE2#=VIL, other inputs 64KB~512KB
170
230
160
mA
mA
=VIH or VIL,Outputs=open
CE1#=CE2# £ 0.2V, other
inputs £ 0.2V or
1MB~4MB
64KB~512KB
1MB~4MB
64KB~4MB
220
10
(17)
0.45
(7.45)
0.65
(7.65)
2.47
³ Vcc-0.2V, Outputs=open
CE1#=CE2#=VIH
other inputs=VIH or VIL
CE1#=CE2# ³ Vcc-0.2V
other inputs £ 0.2V or
³ Vcc-0.2V
Icc 2 • 1
Icc 2 • 2
Standby supply
current 1
Standby supply
current 2
mA
mA
64KB~512KB
1MB~4MB
VBDET1 Battery detect
reference voltage
VBDET2 Battery detect
reference voltage
Vcc=5V, Ta=25°C
Vcc=5V, Ta=25°C
2.27
2.55
2.37
2.65
V
V
2.75
Note 2 : Currents flowing into the card are taken as positive (unsigned).
3 : Typical values are measured at Vcc=5V, Ta=25°C.
4 : The figure in the parentheses indicates the standby current limits when the built-in auxiliary battery is
not fully charged.
14. CAPACITANCE
Limits
Typ.
Test conditions
Parameter
Symbol
CI
Unit
Min.
Max.
30
Input capacitance
VI=GND, vi=25mVrms
f=1MHZ, Ta=25°C
pF
pF
Output Capacitance
Vo=GND, vo=25mVrms
f=1MHz, Ta=25°C
CO
20
Note 4 : These parameters are not 100% tested.
MITSUBISHI
ELECTRIC
6/14
Apr. 1999 Rev. 1.1
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
15. SWITCHING CHARACTERISTICS
Read Cycle (Ta=0~55°C, VCC=5V±5%, unless otherwise noted)
Symbol
Parameter
Limits
Unit
Min.
Max.
tcR
Read cycle time
150
ns
ns
ns
ns
ns
ns
ns
ns
ns
ta(A)
Address access time
150
150
75
ta(CE)
ta(OE)
tdis(CE)
tdis(OE)
ten(CE)
ten(OE)
tV(A)
Card enable access time
Output enable access time
Output disable time (from CE#)
Output disable time (from OE#)
Output enable time (from CE#)
Output enable time (from OE#)
75
75
5
5
0
Data valid time (after address change)
16. TIMING REQUIREMENTS
Write Cycle (Ta=0~55°C, Vcc=5V±5%, unless otherwise noted)
Symbol
Parameter
Limits
Unit
Min.
150
80
Max.
tcW
Write cycle time
Write pulse width
Address set up time
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tw(WE)
tsu(A)
20
tsu(A-WEH)
Address set up time with respect to WE# high
100
100
50
tsu(CE-WEH) Card enable set up time with respect to WE# high
t(D-WEH)
th(D)
Data set up time with respect to WE# high
Data hold time
20
trec(WE)
tdis(WE)
tdis(OE)
ten(WE)
ten(OE)
Write recovery time
20
Output disable time (from WE#)
Output disable time (from OE#)
Output enable time (from WE#)
Output enable time (from OE#)
OE# set up time with respect to WE# low
OE# hold time with respect to WE# high
75
75
5
5
tsu(OE-WE)
th(OE-WE)
10
10
MITSUBISHI
ELECTRIC
7/14
Apr. 1999 Rev. 1.1
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
TIMING DIAGRAM
Read Cycle
tcR
VIH
An
VIL
VIH
ta(A)
ta(CE)
tV(A)
CE#
VIL
ten(CE)
tdis(CE)
ta(OE)
VIH
OE#
VIL
ten(OE)
tdis(OE)
VOH
Hi-Z
Dm
OUTPUT VALID
(DOUT)
VOL
WE#=“H” level
REG#=“H” level
Write Cycle (WE# control)
tCW
VIH
An
VIL
tSU(CE-WEH)
tSU(A-WEH)
VIH
CE#
VIL
VIH
OE#
tW(WE)
VIL
tSU(A)
trec(WE)
VIH
WE#
VIL
th(OE-WE)
th(D)
tSU(OE-WE)
Hi-Z
t(D-WEH)
VIH
Dm
(DIN)
DATA INPUT STABLE
VIL
tdis(WE)
tdis(OE)
ten(OE)
VOH
VOL
ten(WE)
Hi-Z
Dm
(DOUT)
REG#=“H” level
MITSUBISHI
ELECTRIC
8/14
Apr. 1999 Rev. 1.1
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
Write Cycle (CE# control)
tCW
VIH
An
VIL
trec(WE)
tSU(CE-WEH)
tSU(A)
VIH
CE#
VIL
VIH
WE#
VIL
th(D)
t(D-WEH)
VIH
Hi-Z
Dm
DATA INPUT STABLE
(DIN)
VIL
OE#=“H” level
REG#=“H” level
17. SWITCHING CHARACTERISTICS (Attribute)
Read Cycle (Ta=0~55°C, Vcc=5V±5%, unless otherwise noted)
Symbol Parameter
Limits
Unit
Min. Max.
tcRR
ta(A)R
ta(CE)R
ta(OE)R
Read cycle time
300
300
300
150
100
100
5
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address access time
Card enable access time
Output enable access time
tdis(CE)R Output disable time (from CE#)
tdis(OE)R Output disable time (from OE#)
ten(CE)R
ten(OE)R
tV(A)R
Output enable time (from CE#)
Output enable time (from OE#)
Data valid time after address change
5
0
MITSUBISHI
ELECTRIC
9/14
Apr. 1999 Rev. 1.1
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
TIMING DIAGRAM (Attribute)
tcRR
Read Cycle
VIH
An
VIL
VIH
ta(A)R
ta(CE)R
tV(A)R
CE#
VIL
ten(CE)R
ta(OE)R
tdis(CE)R
tdis(OE)R
VIH
OE#
VIL
ten(OE)R
VOH
Hi-Z
Dm
OUTPUT VALID
(DOUT)
VOL
WE#=“H” level
REG#=“L” level
Note 5 : Test Conditions
Input pulse levels
: VIL=0.4V, VIH=2.8V
Input pulse rise, fall time : tr=tf=10ns
Reference voltage
Input
: VIL=0.8V, VIH=2.4V
: VOL=0.8V, VOH=2.0V
Output
(ten and tdis are measured when output voltage is ± 500mV from steady state. )
Load
: 100pF + 1 TTL gate
5pF + 1 TTL gate (at ten and tdis measuring)
6 :
Indicates the don’t care input
7 : Writing is executed in overlap of CE# and WE# are “L” level. (only for Common Memory)
8 : Don’t apply inverted phase signal externally when Dm pin is in output mode.
9 : CE# is indicated as follows:
Read A/Write A : CE#=CE1#=CE2#
Read B/Write B : CE#=CE1#, CE2#=“H” level
Read C/Write C : CE#=CE2#, CE1#=“H” level
MITSUBISHI
ELECTRIC
10/14
Apr. 1999 Rev. 1.1
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
18. ELECTRICAL CHARACTERISTICS
BATTERY BACKUP (Ta=0~55°C, unless otherwise noted)
Symbol
Parameter
Test conditions
Limits
Typ.
Unit
Min.
2.6
2.4
Max.
VBATT
Vi(CE)
Back-up enable battery voltage
Card enable voltage
All pins open
2.4V£VCC£5.25V
0V£VCC<2.4V
V
V
Vcc-0.1
Vcc
Vcc+0.1
64KB
128KB
256KB
512KB
1MB
3
3
3
5
3
All pins open,
VBATT=3V,
Ta=25°C
Battery back-up supply current
Battery back-up supply current
mA
2MB
4MB
5
9
Icc
(Bup)
64KB
128KB
256KB
512KB
1MB
30
30
30
50
30
50
90
All pins open,
VBATT=3V
mA
2MB
4MB
19. TIMING REQUIREMENTS (Ta=0~55°C, unless otherwise noted)
Symbol Parameter
Limits
Min. Typ. Max.
Unit
Tpr
tpf
tsu(Vcc)
trec(Vcc)
Power supply rise time
Power supply fall time
Setup time at power on
Recovery time at power off
0.1
3
20
300 ms
300 ms
ms
1000
ns
CARD INSERTION/REMOVAL TIMING DIAGRAM
tpf
tpr
VCC
VCC MIN
VCC MIN
90%
90%
VCC
tsu(VCC)
trec(VCC)
VIH
VIH
10%
10%
CE1#,
CE2#
CE1#,
CE2#
20. BATTERY SPECIFICATIONS
Please use the following coin type lithium battery.
Type of main battery; CR2025 or equivalents
20.1 BATTERY LIFE EXPECTANCY
The calculated main battery’s life expectancies are as follows.
Card Type
main battery’s life
(when the card is left continuously)
MF365A-J9CATXX
MF3129-J9CATXX
MF3257-J9CATXX
MF3513-J9CATXX
MF31M1-J9CATXX
MF32M1-J9CATXX
MF34M1-J9CATXX
5.9years
5.9years
5.9years
3.6years
5.9years
3.6years
2.0years
Conditions; Temperature : 25°C Humidity : 60%RH
MITSUBISHI
ELECTRIC
11/14
Apr. 1999 Rev. 1.1
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
20.2 REPLACING BATTERY
MF3XXX-J9CATXX series have two batteries inside the card as follows.
Lithium battery; for main battery (replaceable)
Rechargeable battery; for auxiliary battery (not replaceable)
For main battery replacement, perform the following procedure. Performing any other procedures will lose the
data recorded in the IC card.
(1)Have on hand a new main battery that has the same model number as or is equivalent currently installed one.
(2)Insert the IC card into the system and apply power to the IC card so that the auxiliary battery will be charged.
(more than 5 minutes)
(3)While pressing the main battery holder cam release levers inward, slowly withdraw the main battery holder.
(4)With the new main battery set in the battery holder, insert it completely into the IC card.
(5)If the battery holder is incorrectly oriented, it will not smoothly fit into its position or the IC card will bulge.
If such a situation is encountered, properly reorient the battery and battery holder and try again.
(6)Insert the battery holder until it clicks into position.
<NOTICE>
Main battery replacement must be completed quickly (recommended time is within 10 minutes).
If too much time is taken, the recorded data may be lost.
The built-in auxiliary battery cannot be replaced.
21. CONNECTOR
The number of card insertion and removal are as follows.
Office environment
Harsh environment
10000 times min. at speed of 10 cycles/min.
5000 times min. at speed of 10 cycles/min.
22. CARD WEIGHT
about 35g
23. UL CLASS OF MAIN CARD PARTS
(1)MAIN FRAME
UL94V-0
UL94V-0
UL94V-0
(2)PCB
(3)PLASTIC PART OF CONNECTOR
24. THE BATTERY VOLTAGE DETECT SIGNALS (BVD1,2)
BVD1
BVD2
Comment
H
H
L
H
L
L
Battery operational
Battery operational, but battery should be replaced
Battery and data integrity is not kept
Note10. The battery voltage detect signals indicate the present state of the battery.
They do not guarantee the data retention.
25.CONCERNING THE SECURITY OF DATA
There is always the possibility that a soft-error (this malfunction is not permanent hence it is called soft and
the data can be restored by rewriting) may occur with semiconductor products.
When keeping the important data within an IC card, remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as
(1) Keeping multiple copies of the data.
(2) Addition of ECC or CRC by software or hardware.
MITSUBISHI
ELECTRIC
12/14
Apr. 1999 Rev. 1.1
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
! Warning ( if card with battery / card with auxiliary battery )
(1)Do not charge, short, disassemble, deform, heat, or throw the batteries into fire, as they may ignite, overheat,
rupture or explode.
(2)Place the batteries out of the reach of children. If somebody swallows them, they should see a doctor
immediately.
(3)When discarding or storing the batteries, wrap them individually with cellophane tape or other nonconductive
material. If they are positioned in contact with any other metals or batteries, they may explode, rupture or
leak electrolyte solution.
! Caution
This product is not designed or manufactured for use in a device or system that is used under circumstances in
which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized
Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for a
special applications, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear,
or undersea repeater use.
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may
lead to personal injury, fire or property damage. Remember to give due consideration to safety when making
your circuit designs, with appropriate measures such as (1)placement of substitutive, auxiliary circuits,(2)use of
non-flammable material or (3)prevention against any malfunction or mishap.
Notes regarding these materials
lThese materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
l Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-
party’s rights, originating in the use of any product data, diagrams, charts or circuit application examples
contained in these materials.
l All information contained in these materials, including product data, diagrams and charts, represent
information on products at the time of publication of these materials, and are subject to change by Mitsubishi
Electric Corporation without notice due to product improvements or other reasons. It is therefore
recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi
Semiconductor product distributor for the latest product information before purchasing a product listed
herein.
l For instruction on proper use of the IC card, thoroughly read the manual attached to the product before use.
After reading please store the manual in s safe place for future reference.
l The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole
or in part these materials.
l If these products or technologies are subject the Japanese export control restrictions, they must be exported
under a license from the Japanese government and cannot be imported into a country other than approved
destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or
the country of destination is prohibited.
l Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product
distributor for further details on these materials or the products contained therein.
MITSUBISHI
ELECTRIC
13/14
Apr. 1999 Rev. 1.1
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
OUTLINE(68P-012)
MITSUBISHI
ELECTRIC
14/14
Apr.1999 Rev.1.1
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