MG400V2YS60A [MITSUBISHI]
High Power Switching Applications Motor Control Applications; 大功率开关应用电机控制应用
| 型号： | MG400V2YS60A |
| 厂家： | 
Mitsubishi Group |
| 描述： | High Power Switching Applications Motor Control Applications |
| 文件： | 总9页 (文件大小：185K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MG400V2YS60A
MITSUBISHI IGBT Module
MG400V2YS60A
High Power Switching Applications
Motor Control Applications
•
•
•
The electrodes are isolated from case.
Enhancement−mode
Thermal output terminal (TH)
Equivalent Circuit
TH1
TH2
C1
G1
Fo1
E1
E1/C2
G2
Fo2
E2
E2
2004-10-01 1/9
MG400V2YS60A
Package Dimensions
Unit: mm
Weight: 680 g (typ.)
2004-10-01 2/9
MG400V2YS60A
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector−emitter voltage
Gate−emitter voltage
V
V
1700
±20
400
400
V
V
A
A
CES
GES
Collector current
Forward current
DC
DC
I
C
I
F
Collector power dissipation
(Tc = 25°C)
P
4300
W
C
Junction temperature
T
150
°C
°C
j
Storage temperature range
T
stg
−40~125
4000
(AC 1 min)
Isolation voltage
Screw torque
V
V
Isol
Terminal: M8
Mounting: M5
―
―
10
3
N·m
N·m
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Symbol
Test Condition
= ±20V, V = 0V
Min.
Typ.
Max.
Unit
I
V
V
―
―
―
―
±10
1
µA
mA
V
GES
GE
CE
Collector cut−off current
I
= 1700V, V
= 0V
CES
CE
GE
Gate−emitter cut−off voltage
V
I
I
= 400mA, V = 5V
CE
4.5
―
5.5
3.0
3.8
6.5
3.4
4.2
GE(off)
C
C
= 400A
= 15V
T = 25°C
j
Collector−emitter saturation
voltage
V
V
CE(sat)
V
GE
T = 125°C
j
―
V
= 10V, V
= 0V,
CE
GE
Input capacitance
C
ies
―
45000
―
pF
f = 1MHz
Gate−emitter voltage
V
―
―
13
8.2
―
―
―
―
―
―
―
―
15
―
17
15
―
V
GE
Gate resistance
R
Ω
G
Turn−on delay time
t
0.35
0.2
0.55
0.9
0.4
1.3
3.2
2.4
Inductive load
d(on)
Rise time
t
r
―
V
CC
= 900V
Turn−on time
Turn−off delay time
Fall time
t
I
= 400A
―
on
C
Switching
time
µs
V
GE
= ±15V
t
―
d(off)
R
G
= 8.2Ω
t
0.6
―
f
(Note)
Turn−off time
t
off
I
= 400A,
= 0V
T = 25°C
j
4.2
―
F
Forward voltage
V
V
F
V
T = 125°C
j
GE
I
= 400A, V
= −15V
GE
F
Reverse recovery time
t
―
0.20
0.40
µs
rr
di/dt = 2000A/µs
Transistor stage
Diode stage
―
―
―
―
―
0.029
0.056
―
Thermal resistance
R
°C / W
A
th(j−c)
RTC operating current
I
T = 25°C
800
rtc
j
2004-10-01 3/9
MG400V2YS60A
Thermistor
Characteristic
Symbol
Test Condition
MIn.
Typ.
Max.
Unit
Zero power resistance
B value
R25
Tc = 25°C
―
―
100
4390
―
―
―
―
kΩ
K
R25 / 85
Tc = 25°C / Tc = 85°C
Tc = 25°C
Isolation voltage
2500
Vrms
(Note) : Switching time measurement circuit and input / output waveforms
V
GE
90%
R
G
10%
I
F
0
−V
GE
t
rr
V
CC
L
I
C
I
C
0
90%
10%
R
G
90%
V
CE
10%
t
t
d(on)
d(off)
t
f
t
r
t
off
t
on
2004-10-01 4/9
MG400V2YS60A
I
– V
I – V
C CE
C
CE
800
800
Common
emitter
Common
emitter
12
20
12
10
9
10
Tj = 25°C
Tj = 125°C
9
15
600
400
600
400
20
15
V
GE
= 8V
V
GE
= 8V
200
0
200
0
0
2
4
6
8
10
0
2
4
6
8
10
Collector-emitter voltage
V
CE
(V)
Collector-emitter voltage
V
CE
(V)
V
CE
– V
GE
V
CE
– V
GE
12
10
12
10
Common
emitter
Common
emitter
Tj = 125°C
Tj = 25°C
8
8
800
6
4
6
4
800
400
400
2
0
2
0
I
C
= 200A
I
C
= 200A
0
4
8
12
16
20
0
4
8
12
16
20
Gate-emitter voltage
V
(V)
Gate-emitter voltage
V
(V)
GE
GE
I
– V
GE
C
800
125
Tj = 25°C
600
400
200
0
Common emitter
= 5V
V
CE
0
10
20
30
Gate-emitter voltage
V
(V)
GE
2004-10-01 5/9
MG400V2YS60A
I
– V
F
F
V
CE
, V
–Q
GE G
1000
800
1000
800
20
16
Common cathode
= 0
V
GE
VCE = 0
600
600
400
12
8
125
Tj = 25°C
900
400
200
300
600
Common emitter
= 2.25Ω
200
0
R
4
0
L
Tj = 25°C
0
3
4
5
1
2
0
0
1500
2000
500
1000
Charge
Q
(nC)
Forward voltage
V
F
(V)
G
Switching Loss – R
Switching Time – R
G
G
10000
10000
Common emitter
V
V
= 900V
= ±15V
= 400A
CC
GE
: Tj = 25°C
: Tj = 125°C
E
on
I
C
t
off
E
off
t
d(off)
1000
1000
t
on
Common emitter
V
V
= 900V
CC
t
f
= ±15V
t
GE
d(on)
I
C
= 400A
t
r
: Tj = 25°C
: Tj = 125°C
100
6
100
6
8
10
12
14
16
8
10
12
14
16
Gate resistance
R
G
(Ω)
Gate resistance
R
G
(Ω)
Switching Time – I
Switching Loss – I
C
C
10000
1000
1000
Common emitter
V
V
R
= 900V
= ±15V
= 8.2Ω
CC
GE
G
t
off
: Tj = 25°C
: Tj = 125°C
t
f
t
E
on
d(off)
t
on
100
t
d(on)
100
t
r
Common emitter
E
off
V
V
= 900V
CC
GE
=
±15V
: Tj = 25°C
R
= 8.2Ω
: Tj = 125°C
G
10
0
10
0
100
200
400
100
200
400
300
300
Collector current
I
C
(A)
Collector current
I
C
(A)
2004-10-01 6/9
MG400V2YS60A
t , I – I
rr rr
E
dsw
– I
F
F
1000
100
t
rr
100
I
rr
10
Common cathode
Common cathode
di / dt = 2000A / µs
di / dt = 2000A / µs
V
V
= −10V
= 900V
V
V
= −10V
= 900V
GE
CC
GE
CC
: Tj = 25°C
: Tj = 25°C
: Tj = 125°C
: Tj = 125°C
300
10
1
0
0
100
200
400
100
200
400
300
Forward crrent
I
F
(A)
Forward crrent
I
F
(A)
R
th(j-c)
– t
w
C – V
CE
100000
1
Tc = 25°C
C
ies
30000
10000
0.1
Diode stage
C
0.01
oes
3000
Transistor stage
Common emiter
= 0
C
V
res
GE
1000
300
F = 1MHz
Tj = 25°C
0.001
0.0005
0.001
0.01
0.1
1
10
0.1
0.3
1
3
10
30
100
Collector-emitter voltage
V
CE
(V)
Pulse width
t
(s)
w
Short Circuit
t
– R
Short Circuit Soa
w
G
10000
1000
16
12
8
100
10
V
R
= 900V
= 8.2Ω
=
±15V
≤ 10µs
CC
G
4
0
V
V
= 1200V
CC
V
t
GE
w
=±15V
GE
Tj ≤ 125°C
Tj = 125°C
0
400
800
1200
2000
1600
12
16
4
8
0
Collector-emitter voltage
V
CE
(V)
Gate resistance
R
G
(Ω)
2004-10-01 7/9
MG400V2YS60A
Reverse Bias Soa
1000
100
Tj ≤ 125°C
±15V
= 8.2Ω
V
=
GE
R
G
10
0
400
800
1200
1600
2000
Collector–emitter voltage
V
CE
(V)
2004-10-01 8/9
MG400V2YS60A
<V
Rank>
<V Rank>
F
CE(sat)
V
V
F
CE(sat)
Rank Symbol
Min.
Max.
Rank Symbol
Min
Max.
29
30
31
32
33
34
2.6
2.7
2.8
2.9
3.0
3.1
2.9
3.0
3.1
3.2
3.3
3.4
G
H
I
2.5
2.7
2.9
3.1
3.3
3.5
3.7
3.9
2.8
3.0
3.2
3.4
3.6
3.8
4.0
4.2
J
K
L
M
N
<Mark Position>
MITSUBISHI MG400V2YS60A
29H30H
123456
Low side
High side
2004-10-01 9/9
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