MGF0909A_11 [MITSUBISHI]
High-power GaAs FET(small signal gain stage); 高功率GaAs FET（小信号增益级）
| 型号： | MGF0909A_11 |
| 厂家： | 
Mitsubishi Group |
| 描述： | High-power GaAs FET(small signal gain stage) |
| 文件： | 总3页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
< High-power GaAs FET (small signal gain stage) >
MGF0909A
L & S BAND / 6W
non - matched
DESCRIPTION
The MGF0909A GaAs FET with an N-channel schottky
OUTLINE DRAWING
Unit : millimeters
Gate, is designed for use L/S band amplifiers.
FEATURES
①
High output power
P1dB=38.0dBm(TYP.) @f=2.3GHz
High power gain
GLp=11.0dB(TYP.)
@f=2.3GHz
High power added efficiency
add=45%(TYP.)
@f=2.3GHz,P1dB
②
Hermetic Package
②
φ2.2
0.6±0.2
APPLICATION
For L/S Band power amplifiers
③
QUALITY
GG
RECOMMENDED BIAS CONDITIONS
5.0
Vds=10V Ids=1.3A Rg=100
Absolute maximum ratings (Ta=25C)
9.0±0.2
14.0
Symbol
Parameter
Ratings
-15
Unit
V
Gate to source
breakdown voltage
VGSO
VGDO Gate to drain breakdown voltage
-15
V
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
ID
Drain current
5
A
GF-7
IGR
IGF
PT
Reverse gate current
Forward gate current
Total power dissipation
Cannel temperature
Storage temperature
-15
mA
mA
W
31.5
27.3
Tch
Tstg
175
C
C
-65 to +175
Electrical characteristics
(Ta=25C)
Symbol
Parameter
Test conditions
Limits
Unit
Min.
Typ.
Max.
5.0
Saturated drain current
VDS=3V,VGS=0V
-
-2.0
-
--
-
A
V
IDSS
Gate to source cut-off voltage
Transconductance
VDS=3V,ID=10mA
VDS=3V,ID=1.3A
-5.0
VGS(off)
gm
1.5
38.0
45
11.0
-
-
-
S
P1dB
add
GLP
Output power 1dB Compression P VDS=10V,ID=1.3A,f=2.3GHz
37.0
-
dBm
%
Power added Efficiency
Linear Power Gain
*1 *1:Po=P1dB
*2 *2:Pi=22dBm
Vf Method
-
10.0
-
-
dB
C/W
Rth(ch-c) Thermal Resistance *1
9
*1:Channel to case /
Above parameters, ratings, limits are subject to change.
Publication Date : Apr., 2011
1
< High-power GaAs FET (small signal gain stage) >
MGF0909A
L & S BAND / 6W
non - matched
MGF0909A TYPICAL CHARACTERISTICS Tc=0/25/50/75deg.C
TC=0deg
TC=25deg
TC=75deg
TC=50deg
45
40
35
30
25
20
15
10
5
90
80
70
60
50
40
30
20
10
0
Po
PAE
GP
0
0
10
20
Pin (dBm)
30
40
Publication Date : Apr., 2011
2
< High-power GaAs FET (small signal gain stage) >
MGF0909A
L & S BAND / 6W
non - matched
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© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : Apr., 2011
3
相关型号：
MGF0915A-01
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, SMD, 3 PIN
MITSUBISHI
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