MGF0953P_11 [MITSUBISHI]

High-power GaAs FET (small signal gain stage); 高功率GaAs FET(小信号增益级)
MGF0953P_11
型号: MGF0953P_11
厂家: Mitsubishi Group    Mitsubishi Group
描述:

High-power GaAs FET (small signal gain stage)
高功率GaAs FET(小信号增益级)

文件: 总4页 (文件大小:142K)
中文:  中文翻译
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< High-power GaAs FET (small signal gain stage) >  
MGF0953P  
L & S BAND / 0.6W  
SMD / Plastic Mold non - matched  
DESCRIPTION  
The MGF0953P GaAs FET with an N-channel schottky  
Gate, is designed for use L/S band amplifiers.  
FEATURES  
High output power  
Po=28.0dBm(TYP.) @f=2.15GHz,Pin=10dBm  
High power gain  
Gp=16.5dB(TYP.) @f=2.15GHz  
High power added efficiency  
add=40%(TYP.) @f=2.15GHz,Pin=10dBm  
Plastic Mold Lead – less Package  
APPLICATION  
For L/S Band power amplifiers  
QUALITY  
GG  
Fig.1  
RECOMMENDED BIAS CONDITIONS  
Vds=10V Ids=0.15A Rg=1000  
Delivery  
Tape & Reel(1.5K)  
Absolute maximum ratings (Ta=25C)  
Symbol  
VGSO  
Parameter  
Ratings  
-15  
Unit  
V
Gate to source  
breakdown voltage  
VGDO Gate to drain breakdown voltage  
-15  
V
ID  
Drain current  
0.4  
A
IGR  
IGF  
PT  
Reverse gate current  
Forward gate current  
Total power dissipation  
Cannel temperature  
Storage temperature  
-1.25  
5
mA  
mA  
W
6.25  
Tch  
Tstg  
150  
C  
C  
-40 to +150  
Electrical characteristics  
(Ta=25C)  
Symbol  
Parameter  
Test conditions  
Limits  
Unit  
Min.  
-2  
Typ.  
-
Max.  
Gate to source cut-off voltage  
Output power  
VDS=3V,ID=0.1mA  
-5  
-
V
dBm  
%
VGS(off)  
Po *1  
VDS=10V,ID=0.15A,f=2.15GHz  
*1:Pin=10dBm, *2:Pin=0dB  
26  
-
28  
40  
18  
14  
add *1  
GLP *2  
Power added Efficiency  
Linear Power Gain  
-
16.5  
-
-
dB  
Rth(ch-c) Thermal Resistance *3  
Vf Method  
20  
C/W  
:
*3 Channel to case  
Publication Date : Apr., 2011  
1
< High-power GaAs FET (small signal gain stage) >  
MGF0953P  
L & S BAND / 0.6W  
SMD / Plastic Mold non - matched  
MGF09153P TYPICAL CHARACTERISTICS  
Publication Date : Apr., 2011  
2
< High-power GaAs FET (small signal gain stage) >  
MGF0953P  
L & S BAND / 0.6W  
SMD / Plastic Mold non - matched  
MGF0953P S PARAMETERS (Ta=25C,VD=10V,ID=0.15A, Reference Plane see Fig.1)  
Publication Date : Apr., 2011  
3
< High-power GaAs FET (small signal gain stage) >  
MGF0953P  
L & S BAND / 0.6W  
SMD / Plastic Mold non - matched  
Keep safety first in your circuit designs!  
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making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary  
circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.  
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© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.  
Publication Date : Apr., 2011  
4

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