MGF1801B [MITSUBISHI]
MICROWAVE POWER GaAs FET; 微波功率GaAs FET
| 型号： | MGF1801B |
| 厂家： | 
Mitsubishi Group |
| 描述： | MICROWAVE POWER GaAs FET |
| 文件： | 总3页 (文件大小：26K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI SEMICONDUCTOR GaAs FET
MGF1801B
MICROWAVE POWER GaAs FET
Unit:millimeters
DESCRIPTION
The MGF1801B, medium-power GaAs FET with an N-channel
OUTLINE DRAWING
Schottky gate, is designed for use in S to X band amplifiers and
4MIN.
4MIN.
1
oscillators. The hermetically sealed metalceramic
package
assures minimum parasitic losses, and has a configuration suitable
for microstrip circuits.
0.5±0.15
FEATURES
• High output power at 1dB gain compression
2
2
P1dB=23dBm(TYP.)
• High linear power gain
GLP=9dB(TYP.)
@f=8GHz
@f=8GHz
• High reliability and stability
0.5±0.15
3
APPLICATION
S to X band medium-power amplifiers and oscillators.
2.5±0.2
QUALITY GRADE
• IG
RECOMMENDED BIAS CONDITIONS
• VDS=6V
1
GATE
2
3
• ID=100mA
SOURCE
DRAIN
• Refer to Bias Procedure
GD-10
ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)
Symbol
Parameter
Gate to drain voltage
Gate to source voltage
Drain current
Ratings
Unit
V
V
VGDO
VGSO
-8
-8
ID
250
mA
mA
mA
W
Reverse gate current
IGR
IGF
PT
Tch
-0.6
1.5
Forward gate current
Total power dissipation
Channel temperature
Storage temperature
1.2
*1
175
-65 to +175
˚C
Tstg
˚C
*1:TC=25˚C
ELECTRICAL CHARACTERISTICS (Ta=25˚C)
Limits
Typ
Symbol
Parameter
Test conditions
Unit
Min
-8
Max
–
–
–
V
V
V(BR)GDO
Gate to drain breakdown voltage
IG=-200µA
IG=-200µA
–
V(BR)GSO Gate to source breakdown voltage
-8
IGSS
Gate to source leakage current
Saturated drain current
Gate source cut-off voltage
Transconductance
–
VGS=-3V,VDS=0V
VGS=0V,VDS=3V
VDS=3V,ID=100µA
VDS=3V,ID=100mA
20
250
-4.5
–
–
µA
mA
V
IDSS
200
–
150
-1.5
70
VGS(off)
gm
90
9
mS
dB
7
VDS=6V,ID=100mA,f=8GHz
VDS=6V,ID=100mA,f=8GHz
DVf method
Linear power gain
GLP
–
Output power at 1dB gain
compression
21.8
–
23.0
–
–
dBm
P1dB
125
˚C/W
Thermal resistance
*1
Rth(ch-c)
*1:Channel to ambient
Nov. ´97
MITSUBISHI SEMICONDUCTOR GaAs FET
MGF1801B
MICROWAVE POWER GaAs FET
TYPICAL CHARACTERISTICS (Ta=25˚C)
ID vs. VDS
200
VGS=-0.5V/step
VGS=0V
100
0
2
4
10
0
6
8
DRAIN TO SOURCE VOLTAGE VDS(V)
PO vs. Pin
PO vs. Pin
(f=8GHz)
(f=12GHz)
30
25
30
Gain:10dB
Gain:10dB
8
6
8
6
ID=100mA
ID=100mA
4 2
4 2
25
PO
20
15
10
20
15
10
PO
5
0
5
0
VDS=6V
VDS=4V
VDS=6V
VDS=4V
-5
0
5
10
15
20
25
-5
0
5
10
15
20
25
INPUT POWER Pin(dBm)
INPUT POWER Pin(dBm)
Nov. ´97
MITSUBISHI SEMICONDUCTOR GaAs FET
MGF1801B
MICROWAVE POWER GaAs FET
S11 ,S22 vs. f.
S21 ,S12 vs. f.
+90˚
+j50
+j25
+j100
S21
12.0GHz
0.5GHz
+j10
0
+j250
S12
0.5GHz
12.0GHz
6
5
4
3
2
1
25
12.0GHz
50
100
250
0.5GHz
0
0˚
±180˚
I S21 I
12.0GHz
0.1
S22
-j10
-j250
0.5GHz
-j100
S11
-j25
Ta=25˚C
VDS=6V
ID=100mA
0.2
-90˚
-j50
S PARAMETERS (Ta=25˚C,VDS=6V,ID=100mA)
S11
S21
S12
S22
Freq.
(GHz)
MSG/MAG
(dB)
K
Magn.
Angle(deg.)
Magn.
Angle(deg.)
Magn.
Angle(deg.)
Magn.
Angle(deg.)
0.5
1.0
0.899
0.874
0.848
0.822
0.796
0.771
0.745
0.719
0.713
0.706
0.700
0.694
0.691
0.689
0.686
0.683
0.677
0.670
0.664
0.657
0.645
0.632
0.620
0.608
-56.8
-69.4
6.115
5.682
5.248
4.815
4.382
3.949
3.515
3.082
2.863
2.645
2.426
2.207
2.090
1.973
1.856
1.739
1.671
1.602
1.534
1.466
1.413
1.360
1.308
1.255
0.047
0.049
0.050
0.052
0.054
0.056
0.057
0.059
0.060
0.062
0.063
0.064
0.068
0.073
0.077
0.081
0.089
0.096
0.104
0.111
0.118
0.126
0.133
0.140
52.1
49.3
46.4
43.6
40.8
38.0
35.1
32.3
33.3
34.3
35.2
36.2
37.6
39.0
40.4
41.8
40.5
39.3
38.0
36.7
33.2
29.8
26.3
22.8
0.471
0.462
0.452
0.442
0.432
0.422
0.413
0.403
0.412
0.421
0.431
0.440
0.458
0.476
0.494
0.512
0.530
0.549
0.567
0.585
0.601
0.618
0.635
0.651
0.371
0.394
0.431
0.485
0.558
0.657
0.789
0.964
1.006
1.064
1.142
1.245
1.202
1.172
1.153
1.146
1.072
1.011
0.962
0.922
0.893
0.867
0.844
0.823
21.2
20.7
20.2
19.7
19.1
18.5
17.9
17.2
16.3
14.8
13.6
12.4
12.1
11.8
11.5
11.0
11.1
11.6
11.7
11.2
10.8
10.4
9.9
140.3
130.4
120.5
110.6
100.6
90.8
80.9
71.0
63.3
55.6
47.9
40.2
33.9
27.5
21.2
14.8
8.5
-25.2
-32.7
1.5
-82.1
-40.1
2.0
-94.7
-47.5
2.5
-107.4
-120.0
-132.7
-145.3
-153.3
-161.3
-169.3
-177.3
176.9
171.1
165.2
159.4
153.1
146.9
140.6
134.3
127.8
121.3
114.8
108.3
-54.9
3.0
-62.4
3.5
-69.8
4.0
-77.2
4.5
-84.2
5.0
-91.1
5.5
-98.1
6.0
-105.0
-110.3
-115.5
-120.8
-126.0
-130.8
-135.5
-140.3
-145.0
-149.4
-153.9
-158.3
-162.7
6.5
7.0
7.5
8.0
8.5
9.0
2.1
9.5
-4.3
10.0
10.5
11.0
11.5
12.0
-10.6
-17.0
-23.4
-29.7
-36.1
9.5
Nov. ´97
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