MGF2445 [MITSUBISHI]
MICROWAVE POWER GaAs FET; 微波功率GaAs FET![MGF2445](http://pdffile.icpdf.com/pdf1/p00179/img/icpdf/MGF24_1008709_icpdf.jpg)
型号: | MGF2445 |
厂家: | ![]() |
描述: | MICROWAVE POWER GaAs FET |
文件: | 总2页 (文件大小:89K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
相关型号:
![](http://pdffile.icpdf.com/pdf2/p00309/img/page/MGF2445-01_1859161_files/MGF2445-01_1859161_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00309/img/page/MGF2445-01_1859161_files/MGF2445-01_1859161_2.jpg)
MGF2445-01
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, GF-2, 2 PIN
MITSUBISHI
![](http://pdffile.icpdf.com/pdf2/p00225/img/page/MGF2445-11_1317695_files/MGF2445-11_1317695_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00225/img/page/MGF2445-11_1317695_files/MGF2445-11_1317695_2.jpg)
MGF2445-11
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET
MITSUBISHI
![](http://pdffile.icpdf.com/pdf2/p00256/img/page/MGF4318E-30_1548785_files/MGF4318E-30_1548785_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00256/img/page/MGF4318E-30_1548785_files/MGF4318E-30_1548785_2.jpg)
MGF4314C-01
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-4
MITSUBISHI
![](http://pdffile.icpdf.com/pdf2/p00225/img/page/MGFC41V4450_1317697_files/MGFC41V4450_1317697_1.jpg)
MGF4314E
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, GD-4, 4 PIN
MITSUBISHI
![](http://pdffile.icpdf.com/pdf2/p00239/img/page/MGFC4414D-02_1442284_files/MGFC4414D-02_1442284_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00239/img/page/MGFC4414D-02_1442284_files/MGFC4414D-02_1442284_2.jpg)
MGF4314E-01
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-4
MITSUBISHI
![](http://pdffile.icpdf.com/pdf2/p00257/img/page/MGF1102-01_1555098_files/MGF1102-01_1555098_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00257/img/page/MGF1102-01_1555098_files/MGF1102-01_1555098_2.jpg)
MGF4314E-65
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
MITSUBISHI
![](http://pdffile.icpdf.com/pdf2/p00239/img/page/MGFC4414D-02_1442284_files/MGFC4414D-02_1442284_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00239/img/page/MGFC4414D-02_1442284_files/MGFC4414D-02_1442284_2.jpg)
MGF4316C-01
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-4
MITSUBISHI
![](http://pdffile.icpdf.com/pdf2/p00257/img/page/MGF1102-01_1555098_files/MGF1102-01_1555098_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00257/img/page/MGF1102-01_1555098_files/MGF1102-01_1555098_2.jpg)
MGF4316D-01
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
MITSUBISHI
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