MGF4914E-01 [MITSUBISHI]

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-4;
MGF4914E-01
型号: MGF4914E-01
厂家: MITSUBISHI ELECTRIC SEMICONDUCTOR    MITSUBISHI ELECTRIC SEMICONDUCTOR
描述:

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-4

放大器 晶体管
文件: 总12页 (文件大小:755K)
下载:  下载PDF数据表文档文件

MGF4914E-65

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET

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0 MITSUBISHI

MGF4916

SUPER LOW NOISE InGaAs HEMT

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66 MITSUBISHI

MGF4916D

TAPE CARRIER SUPER LOW NOISE INGAAS HEMT

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17 MITSUBISHI

MGF4916D-01

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET

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0 MITSUBISHI

MGF4916D-01

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET

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0 MITSUBISHI

MGF4916F

Transistor

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0 MITSUBISHI

MGF4916G

SUPER LOW NOISE InGaAs HEMT

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51 MITSUBISHI

MGF4916G

SUPER LOW NOISE InGaAs HEMT

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9 MITSUBISHI

MGF4917D

TAPE CARRIER SUPER LOW NOISE INGAAS HEMT

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34 MITSUBISHI

MGF4917D-01

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET

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0 MITSUBISHI

MGF49180

TAPE CARRIER SUPER LOW NOISE INGAAS HEMT

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25 MITSUBISHI

MGF4918D

Transistor,

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1 MITSUBISHI

MGF4918D-01

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET

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0 MITSUBISHI

MGF4918E

SUPER LOW MOISE InGaAs HEMT

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26 MITSUBISHI

MGF4918E-01

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET

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0 MITSUBISHI