MGFC1403 [MITSUBISHI]

FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE; 用于微波低噪声放大器, N沟道肖特基栅极型
MGFC1403
型号: MGFC1403
厂家: MITSUBISHI ELECTRIC SEMICONDUCTOR    MITSUBISHI ELECTRIC SEMICONDUCTOR
描述:

FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE
用于微波低噪声放大器, N沟道肖特基栅极型

栅极 放大器 微波
文件: 总6页 (文件大小:235K)
下载:  下载PDF数据表文档文件

MGFC1403-A03

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET

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0 MITSUBISHI

MGFC1403-A13

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET

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0 MITSUBISHI

MGFC1403-T01

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, DIE-7

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0 MITSUBISHI

MGFC1403-T01

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, DIE-7

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0 MITSUBISHI

MGFC1403-T02

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, DIE-7

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0 MITSUBISHI

MGFC1403-T02

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, DIE-7

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0 MITSUBISHI

MGFC1403-T03

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, DIE-7

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0 MITSUBISHI

MGFC1412-T01

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, DIE-8

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0 MITSUBISHI

MGFC1412-T02

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, DIE-8

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0 MITSUBISHI

MGFC1412-T03

暂无描述

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0 MITSUBISHI

MGFC1423-T03

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, DIE-6

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0 MITSUBISHI

MGFC1801

FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE

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35 MITSUBISHI

MGFC1801-A11

RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, DIE-13

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0 MITSUBISHI

MGFC1801-T02

RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, DIE-13

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0 MITSUBISHI

MGFC1801-T03

RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, DIE-13

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0 MITSUBISHI