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MGFC1801-A11 [MITSUBISHI]

RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, DIE-13;

MGFC1801-A11


元器件型号：	MGFC1801-A11
生产厂家：	MITSUBISHI ELECTRIC SEMICONDUCTOR
描述和应用：	RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, DIE-13 放大器晶体管
PDF文件：	总6页 (文件大小：273K)
下载文档：	下载PDF数据表文档文件
型号参数：MGFC1801-A11参数

MGFC1801-T02

RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, DIE-13

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0 MITSUBISHI

MGFC1801-T03

RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, DIE-13

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0 MITSUBISHI

MGFC2407-T02

RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, DIE-2

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1 MITSUBISHI

MGFC2407-T03

暂无描述

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0 MITSUBISHI

MGFC2415A

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, DIE-7

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0 MITSUBISHI

MGFC2430A

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, DIE-13

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0 MITSUBISHI

MGFC2430-T03

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, DIE-8

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0 MITSUBISHI

MGFC36V3436

3.4 ~ 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET

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43 MITSUBISHI

MGFC36V3436

C band internally matched power GaAs FET

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29 MITSUBISHI

MGFC36V3436

3.4 - 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET

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36 MITSUBISHI

MGFC36V3436_04

3.4 ~ 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET

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18 MITSUBISHI

MGFC36V3436_11

C band internally matched power GaAs FET

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12 MITSUBISHI

MGFC36V3436-51

Transistor

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0 MITSUBISHI

MGFC36V3742A

C band internally matched power GaAs FET

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9 MITSUBISHI

MGFC36V3742A

3.7 - 4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET

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41 MITSUBISHI

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