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MGFC39V4450-51 [MITSUBISHI]

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-8, 2 PIN;

MGFC39V4450-51


元器件型号：	MGFC39V4450-51
生产厂家：	MITSUBISHI ELECTRIC SEMICONDUCTOR
描述和应用：	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-8, 2 PIN 局域网放大器 CD 晶体管
PDF文件：	总2页 (文件大小：66K)
下载文档：	下载PDF数据表文档文件
型号参数：MGFC39V4450-51参数

MGFC39V4450A

4.4 ~ 5.0GHz BAND 8W INTERNALLY MATCHED GaAs FET

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20 MITSUBISHI

MGFC39V4450A

4.4 - 5.0GHz BAND 8W INTERNALLY MATCHED GaAs FET

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20 MITSUBISHI

MGFC39V4450A_04

4.4 ~ 5.0GHz BAND 8W INTERNALLY MATCHED GaAs FET

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10 MITSUBISHI

MGFC39V4450A_11

C band internally matched power GaAs FET

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9 MITSUBISHI

MGFC39V4450A-01

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET

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0 MITSUBISHI

MGFC39V4450A-51

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET

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0 MITSUBISHI

MGFC39V5053-51

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-8, 3 PIN

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0 MITSUBISHI

MGFC39V5258

C band internally matched power GaAs FET

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23 MITSUBISHI

MGFC39V5258

5.2 - 5.8GHz BAND 8W INTERNALLY MATCHED GaAs FET

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9 MITSUBISHI

MGFC39V5258

5.2 - 5.8GHz BAND 8W INTERNALLY MATCHED GaAs FET

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17 MITSUBISHI

MGFC39V5258_11

C band internally matched power GaAs FET

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6 MITSUBISHI

MGFC39V5258_97

5.2 - 5.8GHz BAND 8W INTERNALLY MATCHED GaAs FET

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6 MITSUBISHI

MGFC39V5258-01

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET

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0 MITSUBISHI

MGFC39V5258-51

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2

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0 MITSUBISHI

MGFC39V5864

C band internally matched power GaAs FET

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10 MITSUBISHI

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