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元器件品牌
MGFC40V7177
[MITSUBISHI]
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET; 7.1 - 7.7GHz波段10W内部匹配的GaAs FET
元器件型号：
MGFC40V7177
生产厂家：
MITSUBISHI ELECTRIC SEMICONDUCTOR
描述和应用：
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
7.1 - 7.7GHz波段10W内部匹配的GaAs FET
PDF文件：
总2页 (文件大小：84K)
下载文档：
下载PDF数据表文档文件
型号参数：MGFC40V7177参数
查看货源
MGFC40V7177A
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
Warning
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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7
MITSUBISHI
MGFC40V7177A-51
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
MITSUBISHI
MGFC40V7177B
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
9
MITSUBISHI
MGFC40V7785
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
8
MITSUBISHI
MGFC40V7785
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
15
MITSUBISHI
MGFC40V7785-01
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-18, 2 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
MITSUBISHI
MGFC40V7785-51
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-18, 2 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
MITSUBISHI
MGFC40V7785A
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
6
MITSUBISHI
MGFC40V7785A
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
7
MITSUBISHI
MGFC40V7785A-01
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
MITSUBISHI
MGFC40V7785A-51
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
MITSUBISHI
MGFC40V7785B
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
6
MITSUBISHI
MGFC40V7785B-01
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
MITSUBISHI
MGFC40V7785B-51
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
MITSUBISHI
MGFC41V3642
3.6 - 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
10
MITSUBISHI
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