MGFC4427D-03 [MITSUBISHI]

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6;
MGFC4427D-03
型号: MGFC4427D-03
厂家: MITSUBISHI ELECTRIC SEMICONDUCTOR    MITSUBISHI ELECTRIC SEMICONDUCTOR
描述:

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6

放大器 晶体管
文件: 总4页 (文件大小:127K)
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MGFC4453A-A03

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3

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0 MITSUBISHI

MGFC4453A-A13

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3

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0 MITSUBISHI

MGFC44V3436

3.4-3.6GHz BAND 25W INTERNALLY MATCHED GaAs FET

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50 MITSUBISHI

MGFC44V3436-01

Transistor

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0 MITSUBISHI

MGFC44V3436-51

Transistor

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0 MITSUBISHI

MGFC44V3642

3.6-4.2GHz BAND 24W INTERNALLY MATCHED GaAs FET

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17 MITSUBISHI

MGFC44V3642

3.6-4.2GHz BAND 24W INTERNALLY MATCHED GaAs FET

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7 MITSUBISHI

MGFC44V3642_98

3.6-4.2GHz BAND 24W INTERNALLY MATCHED GaAs FET

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5 MITSUBISHI

MGFC44V3642-51

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET

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0 MITSUBISHI

MGFC44V4450

4.4-5.0GHz BAND 24W INTERNALLY MATCHED GaAs FET

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8 MITSUBISHI

MGFC44V4450

4.4-5.0GHz BAND 24W INTERNALLY MATCHED GaAs FET

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9 MITSUBISHI

MGFC44V4450_98

4.4-5.0GHz BAND 24W INTERNALLY MATCHED GaAs FET

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12 MITSUBISHI

MGFC44V5964

5.9-6.4GHz BAND 24W INTERNALLY MATCHED GaAs FET

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25 MITSUBISHI

MGFC44V5964

5.9-6.4GHz BAND 24W INTERNALLY MATCHED GaAs FET

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8 MITSUBISHI

MGFC44V5964_97

5.9-6.4GHz BAND 24W INTERNALLY MATCHED GaAs FET

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8 MITSUBISHI