MGFK30V4045-01 [MITSUBISHI]

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET;
MGFK30V4045-01
型号: MGFK30V4045-01
厂家: MITSUBISHI ELECTRIC SEMICONDUCTOR    MITSUBISHI ELECTRIC SEMICONDUCTOR
描述:

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET

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文件: 总2页 (文件大小:64K)
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MGFK33M4045

Transistor,

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0 MITSUBISHI

MGFK33M4045-01

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET

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0 MITSUBISHI

MGFK33V4045

X/Ku band internally matched power GaAs FET

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15 MITSUBISHI

MGFK33V4045

14.0-14.5GHz BAND 2W INTERNALLY MATCHED GaAs FET

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19 MITSUBISHI

MGFK33V4045

14.0-14.5GHz BAND 2W INTERNALLY MATCHED GaAs FET

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18 MITSUBISHI

MGFK33V4045_11

X/Ku band internally matched power GaAs FET

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15 MITSUBISHI

MGFK33V4045_97

14.0-14.5GHz BAND 2W INTERNALLY MATCHED GaAs FET

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10 MITSUBISHI

MGFK35V2228

12.2-12.8GHz BAND 3W INTERNALLY MATCHED GaAs FET

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16 MITSUBISHI

MGFK35V2228-01

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-14, 2 PIN

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0 MITSUBISHI

MGFK35V2228-51

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET

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0 MITSUBISHI

MGFK35V2732

12.7-13.2GHz BAND 3W INTERNALLY MATCHED GaAs FET

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19 MITSUBISHI

MGFK35V2732-01

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-14, 2 PIN

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0 MITSUBISHI

MGFK35V4045

14.0-14.5GHz BAND 3W INTERNALLY MATCHED GaAs FET

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14 MITSUBISHI

MGFK35V4045

14.0-14.5GHz BAND 3W INTERNALLY MATCHED GaAs FET

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12 MITSUBISHI

MGFK35V4045

X/Ku band internally matched power GaAs FET

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7 MITSUBISHI