MGFK38A3745_11 [MITSUBISHI]

X/Ku band internally matched power GaAs FET; X / Ku波段内部匹配功率GaAs FET
MGFK38A3745_11
型号: MGFK38A3745_11
厂家: MITSUBISHI ELECTRIC SEMICONDUCTOR    MITSUBISHI ELECTRIC SEMICONDUCTOR
描述:

X/Ku band internally matched power GaAs FET
X / Ku波段内部匹配功率GaAs FET

文件: 总4页 (文件大小:193K)
下载:  下载PDF数据表文档文件

MGFK38V2228

12.2-12.8GHz BAND 6W INTERNALLY MATCHED GaAs FET

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23 MITSUBISHI

MGFK38V2228-01

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-14, 2 PIN

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0 MITSUBISHI

MGFK38V2228-51

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET

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0 MITSUBISHI

MGFK38V2732

12.7-13.2GHz BAND 6W INTERNALLY MATCHED GaAs FET

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14 MITSUBISHI

MGFK39V4045

14.0-14.5 GHz BAND / 8W

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5 MITSUBISHI

MGFK39V4045

14.0-14.5GHz BAND 8W INTERNALLY MATCHD GaAs FET

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12 MITSUBISHI

MGFK39V4045_11

14.0-14.5 GHz BAND / 8W

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17 MITSUBISHI

MGFK39V4045-01

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET

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0 MITSUBISHI

MGFK41A4045

14.0-14.5 GHz BAND / 12W

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11 MITSUBISHI

MGFK44A4045

14.0-14.5 GHz BAND / 25W

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16 MITSUBISHI

MGFK44A4045

14.0-14.5GHz BAND 25W INTERNALLY MATCHED GaAs FET

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23 MITSUBISHI

MGFK44A4045_11

14.0-14.5 GHz BAND / 25W

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10 MITSUBISHI

MGFL45V1920

1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET

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24 MITSUBISHI

MGFL45V1920A

1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET

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24 MITSUBISHI

MGFL45V1920A

1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET

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28 MITSUBISHI