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元器件品牌
MGFX36V0717
[MITSUBISHI]
10.7 - 11.7GHz BAND 4W INTERNALLY MATCHD GaAs FET; 10.7 - 11.7GHz波段4W INTERNALLY MATCHD的GaAs FET
元器件型号：
MGFX36V0717
生产厂家：
MITSUBISHI ELECTRIC SEMICONDUCTOR
描述和应用：
10.7 - 11.7GHz BAND 4W INTERNALLY MATCHD GaAs FET
10.7 - 11.7GHz波段4W INTERNALLY MATCHD的GaAs FET
PDF文件：
总2页 (文件大小：95K)
下载文档：
下载PDF数据表文档文件
型号参数：MGFX36V0717参数
查看货源
MGFX36V0717_11
10.7-11.7 GHz BAND / 4W
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156
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12
MITSUBISHI
MGFX36V0717-01
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET
Warning
: Undefined variable $rtag in
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on line
156
-
0
MITSUBISHI
MGFX38V0005
Transistor
Warning
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on line
156
-
0
MITSUBISHI
MGFX38V0510
RF Power Field-Effect Transistor, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED PACKAGE-2
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
-
0
MITSUBISHI
MGFX38V0510-01
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-14, 2 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
MITSUBISHI
MGFX38V0510-51
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
MITSUBISHI
MGFX38V1722
RF Power Field-Effect Transistor, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED PACKAGE-2
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
MITSUBISHI
MGFX38V1722-01
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-14, 2 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
MITSUBISHI
MGFX38V1722-51
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
MITSUBISHI
MGFX38V9095
RF Power Field-Effect Transistor, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED PACKAGE-2
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
MITSUBISHI
MGFX38V9095-01
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-14, 2 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
MITSUBISHI
MGFX38V9095-51
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
MITSUBISHI
MGFX38V9500-01
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-14, 2 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
MITSUBISHI
MGFX38V9500-51
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
MITSUBISHI
MGFX39V0717
10.7-11.7 GHz BAND / 8W
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on line
156
-
3
MITSUBISHI
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