ML101J14

更新时间:2024-10-20 01:49:41
品牌:MITSUBISHI
描述:FOR OPTICAL INFORMATION SYSTEM

ML101J14 概述

FOR OPTICAL INFORMATION SYSTEM 用于光信息系统 激光二极管

ML101J14 规格参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.84Is Samacsys:N
其他特性:HIGH RELIABILITY配置:SINGLE
最大正向电压:3 V安装特点:THROUGH HOLE MOUNT
功能数量:1最高工作温度:60 °C
最低工作温度:-10 °C光电设备类型:LASER DIODE
标称输出功率:60 mW峰值波长:660 nm
半导体材料:AlGaInP形状:ROUND
尺寸:1.6 mm子类别:Laser Diodes
表面贴装:NO最大阈值电流:57 mA
Base Number Matches:1

ML101J14 数据手册

通过下载ML101J14数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。

PDF下载
MITSUBISHI LASER DIODES  
ML1XX14 SERIES  
FOR OPTICAL INFORMATION SYSTEMS  
TYPE  
NAME  
ML101J14, ML120G14  
This Model is under development. Therefore, please note that this data sheet may be  
changed without any notice.  
DESCRIPTION  
FEATURES  
ML1XX14 is a high power AlGaInP semiconductor laser which  
High Output Power: 50mW (CW) , 70mW (Pulse)  
Visible Light: 660nm (typ.)  
provides a stable, single transverse mode  
oscillation with  
emission wavelength of 660 nm and standard PULSE light  
output of 70mW.  
APPLICATION  
High-Density Optical Disc Drives  
Rewritable DVD(Digital Versatile Disc) Drives  
ML1XX14 has a window-mirror-facet which improves the  
maximum output power. That leads to highly reliable and high-  
power operation.  
ABSOLUTE MAXIMUM RATINGS  
Note 1)  
Symbol  
Parameter  
Conditions  
Ratings  
Unit  
mW  
CW  
60  
70  
2
Po  
Light output power  
Pulse(Note 2)  
-
VRL  
Tc  
Reverse voltage  
V
Case temperature  
-
-
-10 ~ +60  
°C  
Tstg  
Storage temperature  
-40 ~ +100  
°C  
Note1: The maximum rating means the limitation over which the laser should not be operated even instant time,  
and this does not mean the guarantee of its lifetime. As for the reliability,please refer to the reliability report from Mitsubishi  
Semiconductor Quality Assurance Section.  
Note2: TARGET SPEC /Condition Duty less than 50%,pulse width less than 0.1µs  
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25°C)  
Symbol  
Parameter  
Test conditions  
Min.  
Typ.  
57  
Max  
Unit  
Threshold current  
Operating current  
CW  
-
-
-
-
-
-
mA  
mA  
Ith  
CW, Po=50mW  
CW, Po=50mW  
CW, Po=50mW  
132  
2.5  
Iop  
3.0  
-
Operating voltage  
Slope efficiency  
V
Vop  
η
0.67  
mW/mA  
λp  
Peak wavelength  
CW, Po=50mW  
CW, Po=50mW  
655  
-
660  
8.5  
666  
-
nm  
Beam divergence angle  
(parallel)  
θ//  
°
Beam divergence angle  
(perpendicular)  
22  
CW, Po=50mW  
-
-
θ
°
as of December '99  
MITSUBISHI  
ELECTRIC  
( 1 / 5 )  
MITSUBISHI LASER DIODES  
ML1XX14 SERIES  
FOR OPTICAL INFORMATION SYSTEMS  
OUTLINE DRAWINGS  
(1)  
(3)  
ML101J14  
ML120G14  
CASE  
LD  
(2)  
(1)  
ML101J14  
(3)  
CASE  
LD  
(2)  
ML120G14  
There is no model with a monitor photo diode in ML1XX14 series.  
as of December '99  
MITSUBISHI  
ELECTRIC  
( 2 / 5 )  
MITSUBISHI LASER DIODES  
ML1XX14 SERIES  
FOR OPTICAL INFORMATION SYSTEMS  
Typical Characteristics  
Tc=25 40 50 60 70°C  
70  
60  
50  
40  
30  
20  
10  
0
Reference Data  
Duty Cycle: 50 %  
Pulse Width: 0.1 µsec  
0
50  
100  
150  
200  
250  
300  
Operating Current, Iop (mA)  
Light Output Power vs. Current (Pulse)  
70  
Tc=25 40 50 60 70°C  
60  
50  
40  
Reference Data  
30  
20  
10  
0
0
50  
100  
150  
200  
250  
300  
Operating Current, Iop (mA)  
Light Output Power vs. Current (CW)  
as of December '99  
MITSUBISHI  
ELECTRIC  
( 3 / 5 )  
MITSUBISHI LASER DIODES  
ML1XX14 SERIES  
FOR OPTICAL INFORMATION SYSTEMS  
Typical Characteristics  
1
Po: 50 mW, CW  
Tc: 25 °C  
0.5  
0
-60  
-40  
-20  
0
20  
40  
60  
Angle ( ° )  
Far Field Patterns  
100  
50  
CW  
10  
0
10  
20  
30  
40  
50  
60  
70  
Case Temperature, Tc (°C)  
Threshold Current vs Temperature  
as of December '99  
MITSUBISHI  
ELECTRIC  
( 4 / 5 )  
MITSUBISHI LASER DIODES  
ML1XX14 SERIES  
FOR OPTICAL INFORMATION SYSTEMS  
Typical Characteristics  
670  
Po: 50 mW, CW  
665  
660  
655  
∆λp/Tc=0.18 (nm/°C)  
0
10  
20  
30  
40  
50  
60  
70  
Case Temperature, Tc (°C)  
Temperature dependence of Peak Wavelength  
661  
Tc: 25 °C, CW  
660  
659  
658  
∆λp/Po=0.05 (nm/mW)  
657  
656  
0
10  
20  
30  
40  
50  
Light Output Power, Po (mW)  
Light Output Power dependence of Peak Wavelength  
as of December '99  
MITSUBISHI  
ELECTRIC  
( 5 / 5 )  

ML101J14 相关器件

型号 制造商 描述 价格 文档
ML101J16 MITSUBISHI Laser Diode, 660nm 获取价格
ML101J17 MITSUBISHI Laser Diode, 658nm 获取价格
ML101J18 MITSUBISHI MITSUBISHI LASER DIODES 获取价格
ML101J19 MITSUBISHI Laser Diode, 658nm 获取价格
ML101J20 MITSUBISHI Laser Diode, 658nm 获取价格
ML101J21 MITSUBISHI MITSUBISHI LASER DIODES FOR OPTICAL INFORMATION SYSTEMS 获取价格
ML101J22 MITSUBISHI FOR OPTICAL INFORMATION SYSTEMS 获取价格
ML101J23 MITSUBISHI MITSUBISHI LASER DIODES FOR OPTICAL INFORMATION SYSTEMS 获取价格
ML101J24 MITSUBISHI MITSUBISHI LASER DIODES FOR OPTICAL INFORMATION SYSTEMS 获取价格
ML101J25 MITSUBISHI MITSUBISHI LASER DIODES FOR OPTICAL INFORMATION SYSTEMS 获取价格

ML101J14 相关文章

  • 三星业绩下滑引发人才危机,大批高级员工或跳槽SK海力士
    2024-10-22
    8
  • 英特尔携手三星,剑指台积电:半导体代工市场或将迎来新格局
    2024-10-22
    10
  • 高通骁龙8至尊版震撼登场:Oryon CPU性能跃升40%,功耗直降27%
    2024-10-22
    8
  • 高通意外决定:骁龙X Elite迷你机全面取消,启动全额退款流程
    2024-10-22
    9