ML7XX45 [MITSUBISHI]
1310nm InGaAsP FP LASER DIODES; 1310 InGaAsP的FP激光二极管型号: | ML7XX45 |
厂家: | Mitsubishi Group |
描述: | 1310nm InGaAsP FP LASER DIODES |
文件: | 总3页 (文件大小:199K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MITSUBISHI LASER DIODES
ML7xx45 SERIES
Notice: Some parametric limits are subject to change.
1310nm InGaAsP FP LASER DIODES
TYPE
ML720J45S , ML720K45S, ML720Y45S
NAME
ML725B45F , ML725C45F
DESCRIPTION
FEATURES
ML7XX45 series are InGaAsP laser diodes which provide
a stable, single transverse mode oscillation with emission
wavelength of 1310nm and standard continuous light output
of 5mW.
•1310nm typical emission wavelength, FP-LDs
•Low threshold current, low operating current
•Wide temperature range operation
(Tc=-40 to 85deg.C)
•φ5.6mm TO-CA N package
Flat window cap : ML720J45S, ML725B45F
Ball lens cap : ML720K45S, ML725C45F, ML720Y45S
ML7XX45 are hermetically sealed devices having the photo
diode for optical output monitoring. This is suitable for such
applications as FTTH (Fiber to the Home) and ~ 1Gbps Ethernet
/ Fiber channel systems.
APPLICATION
•~155Mbps FTTH system
•~1Gbps Ethernet , Fiber channel
ABSOLUTE MAXIMUM RATINGS
Symbol
Po
Parameter
Conditions
Ratings
Unit
mW
V
Light output power
Laser reverse voltage
PD reverse voltage
PD forward current
Operation temperature
Storage temperature
CW
10[7]
VRL
VRD
IFD
-
-
-
-
-
2
20
2
V
mA
deg.C
deg.C
Tc
-40 to +85
-40 to +100
Tstg
ELECTRICAL/OPTICAL CHARACTERISTICS(Tc=25oC)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Ith
Iop
Vop
η
Threshold current
CW
3
5
15
35
mA
mA
Operation current
Operating voltage
Slope efficiency
CW, Po=5mW
CW, Po=5mW
CW, Po=5mW
10
---
20
1.1
1.5
V
0.3[0.2]
1290
---
0.4[0.3]
1310
1
0.7[0.5]
mW/mA
Center wavelength
Spectral Width
Beam divergence angle(parallel)
Beam divergence angle(perpendicular) CW, Po=5mW
CW, Po=5mW
CW, Po=5mW,RMS(-20dB)
CW, Po=5mW
λc
∆λ
θ∥
1330
2
---
nm
nm
deg.
deg.
nsec
mA
µA
pF
mW
---
25[11]
θ⊥
tr,tf
---
---
30[11]
0.3
---
0.7
0.9
0.1
20
Rise and Fall time (10%-90%)
Monitor Current (PD)
Dark Current (PD)
Ib=Ith,Po=5mW,10-90%
Im
CW, Po=5mW, VRD=1V,
VRD=10V
0.1
---
0.5
Id
---
Ct
Capacitance (PD)
VRD=10V, f=1MHz
CW, PL=5mW,SI10/125
---
10
Pf(Note2)
0.4
0.8
---
Fiber Coupling characteristics
at peak coupling<3>
ML720K45S
CW,
5.0
6.0
5.8
6.5
6.2
7.0
Df(Note2)
ML725C45F
ML720Y45S
mm
PL=5mW,SI10/125
Note : <1> [ ]applied to the lens cap type.
Note : <2> Pf,Df are applied to the ball lens type.
Note : <3> Df is a distance between reference plane of the base to the fiber.
MITSUBISHI
ELECTRIC
May 2004
MITSUBISHI LASER DIODES
ML7xx45 SERIES
1310nm InGaAsP FP LASER DIODES
OUTLINE DRAWINGS
Dimension : mm
+0
-0.03
φ5.6
ML720J45S
ML725B45F
φ4.25
Y
(3)
Case
(0.25)
LD
(3)
(4)
(1)
(2)
X
(1)
(2)
PD
(4)
±0.1
1
ML720J45S
φ3.55±0.1
φ1.5Min.
(3)
φ1.0Min.
Case
LD
Emitting Facet
Reference Plane
(1)
(2)
PD
(4)
±0.25
φ2.0
(P.C.D.)
±0.05
4-φ0.45
ML725B45F
Pin Connection
(1)
(2)
( Top view )
Dimension : mm
+0
-0.03
φ5.6
ML720K45S
ML725C45F
φ4.25
(3)
Case
Y
(0.25)
LD
(3)
(1)
(2)
X
(1)
(2)
PD
(4)
(4)
±0.1
1
ML720K45S
±0.1
φ3.55
(3)
±0.005
φ1.5
Case
LD
(1)
(2)
Emitting Facet
Reference Plane
PD
(4)
ML725C45F
±0.25
φ2.0
±0.05
4-φ0.45
(P.C.D.)
Pin Connection
(1)
(2)
( Top view )
MITSUBISHI
ELECTRIC
May 2004
MITSUBISHI LASER DIODES
ML7xx45 SERIES
1310nm InGaAsP FP LASER DIODES
OUTLINE DRAWINGS
ML720Y45S
Dimension : mm
φ5.6
-0.03
+0
φ4.25
Y
(0.25)
(3)
(4)
X
(1)
(2)
(3)
Case
LD
±0.1
1
(1)
(2)
±0.1
φ3.55
PD
±0.005
φ1.5
(4)
ML720Y45S
( Top view )
Emitting Facet
Reference Plane
±0.25
φ2.0
(P.C.D.)
±0.05
4-φ0.45
(1)
(2)
MITSUBISHI
ELECTRIC
May 2004
相关型号:
ML8122MD
Diversity Switch, 700MHz Min, 900MHz Max, 0.85dB Insertion Loss-Max, 2.50 X 2.50 MM, 0.80 MM HEIGHT, PLASTIC, WSON-10
OKI
ML8250FEA26
RESISTOR, METAL FILM, 0.5W, 1%, 50ppm, 825ohm, THROUGH HOLE MOUNT, AXIAL LEADED, ROHS COMPLIANT
OHMITE
ML8252FE-R52
RESISTOR, METAL FILM, 0.5W, 1%, 50ppm, 82500ohm, THROUGH HOLE MOUNT, AXIAL LEADED, ROHS COMPLIANT
OHMITE
©2020 ICPDF网 联系我们和版权申明