ML920J19S-14 [MITSUBISHI]

Laser Diode, 1510nm;
ML920J19S-14
型号: ML920J19S-14
厂家: Mitsubishi Group    Mitsubishi Group
描述:

Laser Diode, 1510nm

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MITSUBISHI LASER DIODES  
ML9xx19 SERIES  
Notice: Some parametric limits are subject to change  
2.5Gbps InGaAsP DFB LASER DIODE  
TYPE  
ML925B19F / ML920J19S / ML925J19F  
NAME  
FEATURES  
DESCRIPTION  
· l /4 shifted grating structure  
ML9XX19 series are uncooled DFB (Distributed Feedback) laser  
diodes for 2.5Gbps transmission emitting light beam at 1470~1610nm.  
l /4 shifted grating structure is employed to obtain excellent SMSR  
performance under 2.5Gbps modulation. Furthermore, ML9xx19 can  
operate in the wide temperature range from 0oC to 70 oC without any  
temperature control. They are well suited for light source in long  
distance digital transmission application of coarse WDM.  
· Wide temperature range operation (0oC to 70oC)  
· High side-mode-suppression-ratio (typical 45dB)  
· High resonance frequency (typical 11GHz)  
APPLICATION  
· 2.5Gbps long-haul transmission  
· Coarse WDM application  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Po  
Parameter  
Output power  
Conditions  
Ratings  
Unit  
mW  
mA  
V
CW  
6
IF  
Laser forward current  
Laser reverse voltage  
PD forward current  
PD reverse voltage  
Operation temperature  
Storage temperature  
-
-
-
-
-
-
200  
VRL  
IFD  
VRD  
Tc  
2
2
mA  
V
20  
0 to +70  
-40 to +100  
oC  
Tstg  
oC  
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25oC)  
Parameter Conditions  
Limits  
Min. Typ. Max.  
Symbol  
Unit  
mA  
CW  
---  
---  
---  
---  
---  
12  
28  
40  
70  
1.1  
18  
40  
55  
80  
1.5  
---  
---  
Ith  
Threshold current  
CW, Tc=70oC  
CW, Po=5mW <*1>  
CW, Po=5mW, Tc=70oC <*1>  
CW, Po=5mW <*1>  
CW, Po=5mW <*2>  
CW, PL=5mW <*3>  
CW, Po=5mW <*1>  
Iop  
Vop  
h
Operation current  
Operating voltage  
Slope efficiency  
mA  
V
0.15 0.20  
0.13 0.18  
mW/mA  
lp  
Peak wavelength  
< *4,*5 >  
45  
nm  
dB  
dB  
Side mode suppression ratio  
Side mode suppression ratio(RF)  
CW, Po=5mW, Tc=0 to 70oC <*1>  
2.48832Gbps, Ib=Ith, Ipp=40mA  
35  
---  
---  
---  
---  
---  
---  
---  
---  
---  
SMSR  
45  
25  
30  
11  
q//  
q^  
fr  
Beam divergence angle (parallel) <*6> CW, Po=5mW  
(perpendicular) <*6> CW, Po=5mW  
deg.  
Resonance frequency  
2.48832Gbps, Ib=Ith, Ipp=40mA  
GHz  
psec  
2.48832Gbps, Ib=Ith, Ipp=40mA  
20%-80%  
tr , tf Rise and Fall time  
---  
80  
120  
Im  
Id  
Monitoring current (PD)  
CW, Po=5mW, VRD=1V, RL=10W <*7>  
VRD=5V  
0.1  
---  
---  
---  
---  
10  
1.5  
0.1  
20  
mA  
mA  
pF  
Dark current (PD)  
Capacitance (PD)  
Ct  
VRD=5V, f=1MHz  
<*1> PL=5mW is applied to ML925J19F < *2 > Applied to ML925B19F and ML920J19S  
< *3 > Applied to ML925J19F <*6> Beam divergence is not applied to ML925J19F  
May. 2003  
MITSUBISHI  
ELECTRIC  
MITSUBISHI LASER DIODES  
ML9xx19 SERIES  
Notice: Some parametric limits are subject to change  
< *4 >Peak Wavelength  
2.5Gbps InGaAsP DFB LASER DIODE  
Limits  
Type  
Symbol Test Condition  
Unit  
Min.  
1530  
Typ.  
Max.  
1570  
CW, Po=5mW  
Tc=0 to 70oC  
< *1>  
ML925B19F-01 / ML920J19S-01 / ML925J19F-01  
1550  
ML925B19F-04 / ML920J19S-04 / ML925J19F-04  
ML925B19F-05 / ML920J19S-05 / ML925J19F-05  
ML925B19F-06 / ML920J19S-06 / ML925J19F-06  
ML925B19F-07 / ML920J19S-07 / ML925J19F-07  
ML925B19F-08 / ML920J19S-08 / ML925J19F-08  
ML925B19F-09 / ML920J19S-09 / ML925J19F-09  
ML925B19F-10 / ML920J19S-10 / ML925J19F-10  
ML925B19F-11 / ML920J19S-11 / ML925J19F-11  
1467  
1487  
1507  
1527  
1547  
1567  
1587  
1607  
1470  
1490  
1510  
1530  
1550  
1570  
1590  
1610  
1473  
1493  
1513  
1533  
1553  
1573  
1593  
1613  
lp  
nm  
CW, Po=5mW  
Tc=25oC  
< *1>  
< *5 >Peak Wavelength  
Limits  
Typ.  
Type  
Symbol Test Condition  
Unit  
Min.  
1468  
1488  
1508  
1528  
1548  
1568  
1588  
1608  
Max.  
1472  
1492  
1512  
1532  
1552  
1572  
1592  
1612  
ML925B19F-12 / ML920J19S-12 / ML925J19F-12  
ML925B19F-13 / ML920J19S-13 / ML925J19F-13  
ML925B19F-14 / ML920J19S-14 / ML925J19F-14  
ML925B19F-15 / ML920J19S-15 / ML925J19F-15  
ML925B19F-16 / ML920J19S-16 / ML925J19F-16  
ML925B19F-17 / ML920J19S-17 / ML925J19F-17  
ML925B19F-18 / ML920J19S-18 / ML925J19F-18  
ML925B19F-19 / ML920J19S-19 / ML925J19F-19  
1470  
1490  
1510  
1530  
1550  
1570  
1590  
1610  
CW, Po=5mW  
lp  
Tc=25oC  
nm  
< *1>  
May. 2003  
MITSUBISHI  
ELECTRIC  
MITSUBISHI LASER DIODES  
ML9xx19 SERIES  
Notice: Some parametric limits are subject to change  
2.5Gbps InGaAsP DFB LASER DIODE  
OUTLINE DRAWINGS  
(Dimensions : mm)  
ML925B19F  
+0  
-0.03  
f 5.6  
f 4.25  
f 3.55±0.1  
(0.25)  
(3)  
(4)  
(3)  
(1)  
Case  
(1)  
(2)  
(4)  
PD  
LD  
1±0.1  
f 2.0Min.  
f 1.0Min.  
Emitting Facet  
Reference Plane  
(2)  
f 2.0±0.25  
(P.C.D.)  
4- f 0.45±0.05  
(1)  
(2)  
(Dimensions : mm)  
+0  
- 0 . 0 3  
f 5.6  
ML920J19S  
f 4.25  
(0.25)  
(3)  
(4)  
(2)  
(3)  
Case  
(1)  
(2)  
PD  
LD  
1±0.1  
f 3.55±0.1  
f 2.0Min.  
f 1.0Min.  
(4)  
(1)  
Emitting Facet  
Reference Plane  
f 2.0±0.25  
(P.C.D.)  
4- f 0.45±0.05  
(2)  
(1)  
(Dimensions : mm)  
+0  
-0.03  
F
5.6  
4.3  
ML925J19F  
F
(0.25)  
(3)  
(4)  
(4)  
(3)  
(1)  
(2)  
Case  
1 ±0.1  
PD  
LD  
F 3.75±0.1  
Emitting Facet  
Reference Plane  
(2)  
(1)  
F
2.0 ±0. 25  
(P.C.D.)  
4 - F 0.45±0.05  
(1)  
(2)  
May. 2003  
MITSUBISHI  
ELECTRIC  

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