ML925B43F [MITSUBISHI]
2.5Gbps InGaAsP DFB LASER DIODE; 2.5Gbps的的InGaAsP DFB激光二极管
| 型号： | ML925B43F |
| 厂家： | 
Mitsubishi Group |
| 描述： | 2.5Gbps InGaAsP DFB LASER DIODE |
| 文件： | 总2页 (文件大小：173K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI LASER DIODES
ML9XX43 SERIES
Notice : Some parametric limits are subject to change
2.5Gbps InGaAsP DFB LASER DIODE
TYPE
NAME
ML925B43F / ML920J43S
ML925J43F / ML920L43S
DESCRIPTION
APPLICATION
ML9XX43 series are uncooled DFB (Distributed Feedback) laser
diodes for 2.5Gbps transmission emitting light beam at 1550nm.
ML9xx43 can operate in the wide temperature range from -20oC to
2.5Gbps long-haul transmission
FEATURES
· Wide temperature range operation (-20oC to 95oC)
· High side-mode-suppression-ratio (typical 40dB)
· High resonance frequency (typical 11GHz)
o
95 C without any temperature control. They are well suited
for light source in long distance digital transmission
application.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Conditions
Ratings
Unit
mW
mA
V
mA
V
Po
Output power
CW
---
10
150
2
If
VRL
IFD
Forward current (Laser diode)
Reverse voltage (Laser diode)
Forward current (Photo diode)
Reverse voltage (Photo diode)
---
---
2
20
VRD
---
Tc
Tstg
Case temperature
Storage temperature
---
---
-20 to +95
-40 to +100
ºC
ºC
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC)
Symbol
Parameter
Test conditions
Min. Typ. Max.
Unit
mA
CW
---
---
---
---
---
10
35
25
70
1.1
15
50
40
80
1.5
---
Ith
Threshold current
CW, Tc=95ºC
CW, Po=5mW
Iop
Operation current
mA
CW, Po=5mW , Tc=95ºC
Vop
η
Operating voltage
Slope efficiency
Peak wavelength
CW, Po=5mW
V
mW/mA
nm
dB
deg.
CW, Po=5mW
0.20 0.28
1530 1550 1570
λp
CW, Po=5mW, Tc=-20 to 95ºC
SMSR Side mode suppression ratio
35
---
40
25
---
---
CW, Po=5mW, Tc=-20 to 95ºC
Beam divergence angle (parallel) <*1> CW, Po=5mW
(perpendicular) <*1> CW, Po=5mW
θ //
---
35
---
deg.
θ ┴
Resonance frequency
2.48832Gbps,Ib=Ith, Ipp=30mA
---
11
---
GHz
fr
2.48832Gbps,Ib=Ith, Ipp=30mA
tr,tf
Rise and Fall time <*2>
---
80
120
ps
20%-80%
Im
Id
Ct
Monitoring output current (PD)
Dark current (PD)
Capacitance (PD)
0.05
---
---
0.2
---
10
2.0
0.1
20
mA
µA
pF
CW, Po=5mW,VRD=1V,RL=10Ω
VRD=5V
VRD=5V
<*1> Beam divergence is not applied to ML925J43F and ML920L43S.
<*2> Except influence of the 18mm lead.
MITSUBISHI
ELECTRIC
Aug. 2005
MITSUBISHI LASER DIODES
ML9XX43 SERIES
Notice : Some parametric limits are subject to change
OUTLINE DRAWINGS
2.5Gbps InGaAsP DFB LASER DIODE
+0
-0.03
ML925B43F
ML920J43S
φ5.6
(3)
Case
φ4.25
Ｙ
LD
(0.25)
(1)
(2)
(3)
(4)
PD
Ｘ
(4)
(1)
(2)
ML925B43F
±0.1
1
φ3.55±0.1
φ2.0Min.
(3)
Case
φ1.0Min.
LD
(1)
(2)
Emitting Facet
Reference Plane
PD
(4)
ML920J43S
φ2.0±0.25
(P.C.D.)
4-φ0.45±0.05
Pin Connection
( Top view )
(1)
(2)
(3)
ML925J43F
ML920L43S
+0
-0.03
φ5.6
Case
LD
φ4.3
Ｙ
(1)
(2)
(0.25)
Top View
(3)
PD
(4)
Ｘ
(1)
(2)
(4)
ML925J43F
1±0.1
φ3.75±0.1
(3)
Case
Ｚ
LD
(1)
(2)
Emitting Facet
Reference Plane
PD
(4)
±0.25
φ2.0
(P.C.D.)
M
L
9
2
0
L43S
±0.05
4-φ0.45
Pin Connection
(T ie
(1)
(2)
op v w)
MITSUBISHI
ELECTRIC
Aug. 2005
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