PD893D2 [MITSUBISHI]
InGaAs AVALANCHE PHOTO DIODES; InGaAs雪崩光电二极管
| 型号： | PD893D2 |
| 厂家： | 
Mitsubishi Group |
| 描述： | InGaAs AVALANCHE PHOTO DIODES |
| 文件： | 总3页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI PHOTO DIODES
PD8XX2 SERIES
InGaAs AVALANCHE PHOTO DIODES
PD8042, PD8932, PD893D2
DESCRIPTION
Feature
PD8XX2 Series are InGaAs avalanche photodiodes
which has a sensitive area of f50mm.
f50mm active diameter
1000~1600nm wavelength band
Small dark current
Low noise
PD8XX2 is suitable for receiving the light having
a wavelength band of 1000 to 1600nm.
This photodiode features high-speed response and
a high responsivity, and is suitable for the
light receiving elements for optical fiber
communication systems.
High responsivity
APPLICATION
Receiver for optical communication system
ABSOLUTE MAXIMUM RATINGS <*1>
Symbol
Ir
Parameter
Reverse current
Forward curent
Case temperature
Storage temperature
Conditions
Ratings
500
Unit
mA
mA
C
-
-
-
-
If
2
Tc
-40 ~ +85
-40 ~ +100
Tstg
C
Note1: The maximum rating means the limitation over which the device should not be operated
even instant time, and this does not mean the guarantee of its lifetime.
As for the reliability,please refer to the reliability report from Mitsubishi Semiconductor
Quality Assurance Department.
ELECTRICAL / OPTICAL CHARACTERISTICS (Tc=25 C)
Limits
Symbol
Parameter
Test conditions
Unit
Min.
Typ. Max.
VBR
Id
Break-down voltage
Dark current
40
-
60
60
90
100
-
V
Id=100mA
Vr=0.9VBR
nA
R
Responsivity
-
0.8
A/W
pF
M=1, l=1300nm
Ct
fc
Capacitance
Vr=0.9VBR, f=1MHz
-
0.4 *1
2.5
0.9
-
Cut-off frequency
1.0
GHz
M=10, l=1300nm, RL=50W, -3dB
*1 Applied to PD8932: Ct=0.5pF(typ.), PD8042: Ct=0.7pF(typ.)
MITSUBISHI ELECTRIC
As of Mar, 2002
MITSUBISHI PHOTO DIODES
PD8XX2 SERIES
InGaAs AVALANCHE PHOTO DIODES
QUALITY ASSURANCE
A range of the quality assurance is restricted as the product exposes the bare die to the external atmosphere, different
from the conventional sealed package products.
Regarding the quality assurance, please confirm to Mitsubishi Semiconductor Quality Assurance Section.
PRECAUTIONS
Some characteristics of this product may change depending on the user’s assembling condition. The system should
be carefully designed so that problems do not occur.
SAFETY PRECAUTIONS RELATING TO HANDOLING OF OPTICAL SEMICONDUCTOR
DEVICE
General:
Although the manufacturer is always striving to improve the reliability of its products, problems and errors may occur
with semiconductor products. Hence, it is required so that the user’s products are designed with full regard to safety
by incorporating the redundancy, fire prevention, error prevention so that any problems or error with a semiconductor
product does not cause any accidents resulting in injury or death, fire, or environmental damage. The following
requirements must be strictly observed.
Warning!
1.
Handling of the product
This product uses GaAs (gallium arsenate). In normal conditions this product is not toxic. However, if it is powdered
or vaporized, its powder or vapor is dangerous to humans. Never attempt to crush, grind, bake or chemically treat
this product. Do not put this product into your mouth or swallow it.
2.
Discarding the product
This product uses GaAs (gallium arsenate). It should be discarded as a specially controlled industrial waste, it should
be separated from general industrial and household wastes, according to the “Law of Wastes and Cleaning”.
Caution!
1.
High temperature
During operation the product may become hot. Therefore do not touch it directly during operation. The product
will remain hot even after the power is turned off, so wait until it cools before you touch it. Otherwise burns may be
caused. Never place any inflammable substance which may cause a fire near the product.
There is a possibility that the specification is changed without notice.
MITSUBISHI ELECTRIC
PD8XX2 SERIES
OUTLINE DRAWINGS
f 5.6
0.4
PD8042
(1)
Unit: mm
1.0
f 4.4
f 3.55
f 1.7
(2)
CD header
<Lead Connection>
(1)Cathode
(2)Case
(3)Anode
3-f 0.45
Flat glass cap
3 pin
(1)
(3)
(2)
f 2.00
P.C.D.
(1)
(2)
PD8932
Unit: mm
(1)
2.2
PD CHIP
(2)
4.0
CERAMIC
Alumina submount
Au METALIZE
Unit: mm
PD893D2
0.30
0.10
0.20
0.30
(1)
0.30
0.20
0.30
(1)
(2)
(2)
1.00
<Lead Connection>
(1)Anode
(2)Cathode
Alumina submount
(2/2)
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