概述
数据手册PM100RSE120_07 概述
FLAT-BASE TYPE INSULATED PACKAGE FLAT -BASE型绝缘包装
PM100RSE120_07 数据手册
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PDF下载MITSUBISHI<INTELLIGENTPOWER MODULES>
PM100RSE120
FLAT-BASETYPE
INSULATEDPACKAGE
PM100RSE120
FEATURE
a) Adopting new 4th generation planar IGBT chip, which per-
formance is improved by 1µm fine rule process.
b) Using new Diode which is designed to get soft reverse
recovery characteristics.
• 3φ 100A, 1200V Current-sense IGBT for 15kHz switching
• 50A, 1200V Current-sense regenerative brake IGBT
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for over-
current, short-circuit, over-temperature & under-voltage
• Acoustic noise-less 18.5/22kW class inverter application
• UL Recognized
Yellow Card No.E80276(N)
FileNo.E80271
APPLICATION
General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES
Dimensions in mm
135±1
120.5±0.5
4- φ5.5
MOUNTING
HOLES
24.1
Terminal code
39.7
LABEL
0.5 ±0.3
1. VUPC
2. UP
11. VN1
12. Br
11 13 15
10 12 14 16
1
2 3
4
5 6
7 8 9
3. VUP1
4. VVPC
5. VP
13. UN
14. VN
15. WN
16. FO
3.22
10.16
10.16
10.16
2-2.54 2-2.54 2-2.54 6-2.54
67.4
6. VVP1
7. VWPC
8. WP
74.4
9. VWP1
10. VNC
10.5
φ2.54
U
V
W
2-2.54
3.22
0.64
4-R6
51.5
A
26
26
16- 0.64
Screwing depth
Min9.0
6-M5 NUTS
2-φ2.54
A : DETAIL
Jul. 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100RSE120
FLAT-BASE TYPE
INSULATED PACKAGE
INTERNAL FUNCTIONS BLOCK DIAGRAM
Rfo=1.5kΩ
WP
VWP1
VP
VVP1
UP
VUP1
Br Fo
V
NC
W
N
V
N1
V
N
UN
VWPC
VVPC
VUPC
Rfo
Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc
TEMP
Gnd In Fo Vcc Gnd In
Vcc Gnd In
Gnd
Vcc Gnd In
Gnd
Si Out
Vcc
Gnd
Gnd
Gnd
Gnd
Gnd
Si Out
Si Out
Si Out
Si Out
Si Out
Si Out
Th
B
N
W
V
U
P
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
VCES
±IC
Parameter
Collector-Emitter Voltage
Collector Current
Condition
Ratings
Unit
V
VD = 15V, VCIN = 15V
TC = 25°C
1200
100
A
±ICP
PC
Collector Current (Peak)
Collector Dissipation
Junction Temperature
TC = 25°C
200
A
TC = 25°C
595
W
°C
Tj
–20 ~ +150
BRAKE PART
Symbol
Parameter
Condition
Ratings
1200
50
Unit
V
VCES
IC
Collector-Emitter Voltage
Collector Current
VD = 15V, VCIN = 15V
TC = 25°C
A
ICP
PC
Collector Current (Peak)
Collector Dissipation
TC = 25°C
100
A
TC = 25°C
416
W
V
VR(DC)
IF
FWDi Rated DC Reverse Voltage TC = 25°C
1200
15
FWDi Forward Current
Junction Temperature
TC = 25°C
A
Tj
–20 ~ +150
°C
CONTROL PART
Symbol
Parameter
Supply Voltage
Condition
Ratings
20
Unit
V
Applied between : VUP1-VUPC
VVP1-VVPC, VWP1-VWPC, VN1-VNC
Applied between : UP-VUPC, VP-VVPC
WP-VWPC, UN • VN • WN • Br-VNC
Applied between : FO-VNC
Sink current at FO terminal
VD
VCIN
20
V
Input Voltage
VFO
IFO
Fault Output Supply Voltage
Fault Output Current
20
20
V
mA
Jul. 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100RSE120
FLAT-BASE TYPE
INSULATED PACKAGE
TOTAL SYSTEM
Ratings
Unit
Symbol
Parameter
Condition
Supply Voltage Protected by
OC & SC
VD = 13.5 ~ 16.5V, Inverter Part,
Tj = 125°C Start
800
1000
V
V
VCC(PROT)
VCC(surge) Supply Voltage (Surge)
Applied between : P-N, Surge value or without switching
Module Case Operating
Temperature
TC
(Note-1)
–20 ~ +100
°C
Storage Temperature
Isolation Voltage
Tstg
Viso
–40 ~ +125
°C
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
2500
Vrms
(Note-1) TC measurement point is as shown below. (Base plate depth 3mm)
Tc
63mm
U
V
W
THERMAL RESISTANCES
Limits
Typ.
—
—
—
—
—
—
—
Test Condition
Symbol
Unit
Parameter
Min.
—
—
—
—
—
—
—
—
—
Max.
0.21
0.35
0.30
0.80
0.13
0.21
0.22
0.36
0.018
Inverter IGBT part (per 1 element), (Note-1)
Inverter FWDi part (per 1 element), (Note-1)
Brake IGBT part (Note-1)
Rth(j-c)Q
Rth(j-c)F
Rth(j-c)Q
Rth(j-c)F
Rth(j-c’)Q
Rth(j-c’)F
Rth(j-c’)Q
Rth(j-c’)F
Rth(c-f)
Junction to case Thermal
Resistances
Brake FWDi part (Note-1)
Inverter IGBT part (per 1 element), (Note-2)
Inverter FWDi part (per 1 element), (Note-2)
Brake IGBT part (Note-2)
°C/W
—
—
Brake FWDi part (Note-2)
Contact Thermal Resistance
Case to fin, Thermal grease applied (per 1 module)
(Note-2) TC measurement point is just under the chips.
If you use this value, Rth(f-a) should be measured just under the chips.
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Limits
Typ.
2.4
2.1
2.5
1.0
0.15
0.4
2.5
0.7
—
Unit
Test Condition
Symbol
VCE(sat)
Parameter
Collector-Emitter
Min.
—
Max.
3.2
2.8
3.5
2.5
0.3
1.0
3.5
1.2
1
VD = 15V, IC = 100A
VCIN = 0V, Pulsed
Tj = 25°C
(Fig. 1) Tj = 125°C
–IC = 100A, VD = 15V, VCIN = 15V
V
V
Saturation Voltage
—
(Fig. 2)
—
VEC
ton
FWDi Forward Voltage
0.5
—
VD = 15V, VCIN = 15V↔0V
VCC = 600V, IC = 100A
Tj = 125°C
trr
µs
—
tc(on)
toff
Switching Time
—
Inductive Load (upper and lower arm)
(Fig. 3)
—
tc(off)
Collector-Emitter
Cutoff Current
Tj = 25°C
Tj = 125°C
—
ICES
V
CE = VCES, VCIN = 15V
(Fig. 4)
mA
—
—
10
Jul. 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100RSE120
FLAT-BASE TYPE
INSULATED PACKAGE
BRAKE PART
Limits
Unit
Test Condition
Symbol
Parameter
Min.
—
Typ.
2.65
2.60
2.5
Max.
3.30
3.25
3.5
1
Collector-Emitter
VD = 15V, IC = 50A
VCIN = 0V, Pulsed
IF = 50A
Tj = 25°C
(Fig. 1) Tj = 125°C
(Fig. 2)
VCE(sat)
VFM
V
V
—
Saturation Voltage
FWDi Forward Voltage
Collector-Emitter
Cutoff Current
—
Tj = 25°C
—
—
V
CE = VCES, VCIN = 15V
(Fig. 4)
ICES
mA
Tj = 125°C
—
—
10
CONTROL PART
Limits
Typ.
60
Symbol
Parameter
Circuit Current
Test Condition
VD = 15V, VCIN = 15V
Unit
mA
V
Min.
—
Max.
82
VN1-VNC
ID
VXP1-VXPC
—
15
20
Input ON Threshold Voltage
Input OFF Threshold Voltage
Vth(on)
Vth(off)
Applied between : UP-VUPC, VP-VVPC, WP-VWPC
1.2
1.7
228
145
1.5
2.0
345
—
1.8
2.3
—
UN • VN • WN • Br-VNC
Tj = 25°C
Inverter part
Tj = 125°C
(Fig. 5,6)
—
VD = 15V
Over Current Trip Level
A
OC
Break part
75
—
—
–20 ≤ Tj ≤ 125°C, VD = 15V
(Fig. 5,6)
Inverter part
Brake part
(Fig. 5,6)
—
—
340
144
10
—
—
Short Circuit Trip Level
SC
–20≤ Tj ≤ 125°C, VD = 15V (Fig. 5,6)
A
µs
°C
Over Current Delay Time
Over Temperature Protection
toff(OC)
OT
VD = 15V
—
—
Trip level
Base-plate
111
—
118
100
12.0
12.5
—
125
—
Reset level
Trip level
OTr
Temperature detection, VD = 15V
Supply Circuit Under-Voltage
Protection
UV
12.5
—
11.5
—
V
–20 ≤ Tj ≤ 125°C
VD = 15V, VFO = 15V
VD = 15V
Reset level
UVr
IFO(H)
IFO(L)
—
0.01
15
Fault Output Current
mA
ms
(Note-3)
(Note-3)
—
10
Minimum Fault Output Pulse
Width
tFO
1.0
1.8
—
(Note-3) Fault output is given only when the internal OC, SC, OT & UV protection.
Fault output of OT protection operate by lower arm.
Fault output of OC, SC protection given pulse.
Fault output of OT, UV protection given pulse while over level.
MECHANICAL RATINGS AND CHARACTERISTICS
Limits
Typ.
3.0
Unit
Test Condition
Parameter
Mounting torque
Symbol
Min.
2.5
2.5
—
Max.
3.5
3.5
—
—
—
—
Main terminal
Mounting part
screw : M5
screw : M5
N • m
3.0
Mounting torque
Weight
N • m
g
920
—
RECOMMENDED CONDITIONS FOR USE
Symbol Parameter
Supply Voltage
Test Condition
Recommended value
Unit
V
VCC
Applied across P-N terminals
≤ 800
Applied between : VUP1-VUPC, VVP1-VVPC
VWP1-VWPC, VN1-VNC
VD
Control Supply Voltage
15 ± 1.5
V
V
(Note-4)
Input ON Voltage
Input OFF Voltage
VCIN(on)
VCIN(off)
Applied between : UP-VUPC, VP-VVPC, WP-VWPC
UN • VN • WN • Br-VNC
≤ 0.8
≥ 4.0
Using Application Circuit input signal of IPM, 3φ
PWM Input Frequency
fPWM
tdead
≤ 20
kHz
µs
sinusoidal PWM VVVF inverter
(Fig. 8)
(Fig. 7)
Arm Shoot-through
Blocking Time
For IPM’s each input signals
≥ 3.0
(Note-4) Allowable Ripple rating of Control Voltage : dv/dt ≤ ±5V/µs, 2Vp-p
Jul. 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100RSE120
FLAT-BASE TYPE
INSULATED PACKAGE
PRECAUTIONS FOR TESTING
1. Before appling any control supply voltage (VD), the input terminals should be pulled up by resistores, etc. to their corre-
sponding supply voltage and each input signal should be kept off state.
After this, the specified ON and OFF level setting for each input signal should be done.
2. When performing “OC” and “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not
be allowed to rise above VCES rating of the device.
(These test should not be done by using a curve tracer or its equivalent.)
P, (U,V,W,B)
P, (U,V,W)
IN
IN
(Fo)
(Fo)
Ic
–Ic
V
V
V
CIN
(15V)
V
CIN
(0V)
U,V,W, (N)
U,V,W,B, (N)
VD
(all)
VD (all)
Fig. 1 VCE(sat) Test
Fig. 2 VEC, (VFM) Test
a) Lower Arm Switching
P
trr
VCE
Signal input
(Upper Arm)
V
15V)
CIN
Irr
Ic
U,V,W
(
Vcc
C
S
90%
Fo
90%
Signal input
(Lower Arm)
V
CIN
N
P
10%
VD (all)
Ic
10%
b) Upper Arm Switching
10%
10%
tc (on)
tc (off)
V
CIN
Signal input
(Upper Arm)
VCIN
U,V,W
Vcc
C
S
td (on)
tr
td (off)
tf
Fo
V
15V)
CIN
Signal input
(Lower Arm)
(
(ton= td (on) + tr)
(toff= td (off) + tf)
N
Ic
VD (all)
Fig. 3 Switching time Test circuit and waveform
P, (U,V,W,B)
A
V
CIN
IN
(Fo)
Pulse
V
CE
V
(15V)
CIN
Over Current
OC
U,V,W, (N)
I
C
VD (all)
t
off (OC)
Constant Current
Fig. 4 ICES Test
P, (U,V,W,B)
Short Circuit Current
IN
V
CC
(Fo)
Constant Current
SC
V
CIN
I
C
U,V,W, (N)
V
D
(all)
IC
Fig. 5 OC and SC Test
Fig. 6 OC and SC Test waveform
P
V
D
V
CINP
U,V,W
Vcc
V
D
V
CINN
CINP
N
Ic
V
0V
0V
t
t
V
CINN
tdead
tdead
tdead
Fig. 7 Dead time measurement point example
Jul. 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100RSE120
FLAT-BASE TYPE
INSULATED PACKAGE
P
≥10µ
20k
VUP1
Vcc
In
→
OUT
Si
+
VD
IF
UP
–
U
VUPC
GND GND
≥0.1µ
VVP1
Vcc
OUT
Si
VD
VD
VP
In
V
VVPC
GND GND
M
VWP1
Vcc
OUT
Si
WP
In
W
VWPC
GND GND
20k
Vcc
Fo
In
OUT
Si
→
≥10µ
IF
UN
GND GND
≥0.1µ
N
Th
20k
TEMP
Vcc
→
OUT
≥10µ
≥10µ
Fo
IF
Si
VN
In
GND GND
≥0.1µ
20k
VN1
WN
Vcc
→
OUT
Fo
IF
VD
Si
In
GND GND
B
≥0.1µ
VNC
4.7k
Vcc
OUT
Fo
Br
Si
In
GND GND
1k
5V
Rfo
Fo
: Interface which is the same as the U-phase
Fig. 8 Application Example Circuit
NOTES FOR STABLE AND SAFE OPERATION ;
Design the PCB pattern to minimize wiring length between opto-coupler and IPM’s input terminal, and also to minimize the
•
stray capacity between the input and output wirings of opto-coupler.
Quick opto-couplers : TPLH, TPLH ≤ 0.8µs. Use High CMR type. The line between opto-coupler and intelligent module
•
should be shortened as much as possible to minimize the floating capacitance.
Slow switching opto-coupler : recommend to use at CTR = 100 ~ 200%, Input current = 8 ~ 10mA, to work in active.
•
Use 4 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the
•
power supply.
Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N
•
terminal.
Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line
•
and improve noise immunity of the system.
Jul. 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100RSE120
FLAT-BASE TYPE
INSULATED PACKAGE
PERFORMANCE CURVES (Inverter Part)
COLLECTOR-EMITTER SATURATION
OUTPUT CHARACTERISTICS
VOLTAGE (VS. Ic) CHARACTERISTICS
(TYPICAL)
(TYPICAL)
120
2.5
VD = 15V
T
j
= 25°C
V
D
= 17V
15V
100
80
60
40
20
0
2
1.5
1
13V
0.5
0
T
T
j
j
= 25°C
= 125°C
0
0.5
1
1.5
2
2.5
3
0
20
40
60
80
100 120
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. V
D
) CHARACTERISTICS
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
(TYPICAL)
3
2.5
2
101
7
V
V
CC = 600V
= 15V
D
5
4
3
T
T
j
= 25°C
= 125°C
j
Inductive load
2
1.5
1
100
7
t
c(off)
t
t
t
c(on)
c(on)
c(off)
5
4
3
IC = 100A
0.5
0
2
T
T
j
= 25°C
= 125°C
j
10–1
12
13
14
15
16
17
18
(V)
101
2
3
4 5
7
102
2
3
4 5
(A)
7
103
CONTROL SUPPLY VOLTAGE V
D
COLLECTOR CURRENT I
C
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
SWITCHING LOSS CHARACTERISTICS
(TYPICAL)
101
7
102
7
5
4
3
5
4
3
2
E
E
SW
(
(
off
off
)
)
E
SW(on)
101
7
2
SW
t
off
5
4
100
7
t
on
3
2
E
SW(on)
5
4
3
100
7
V
V
CC = 600V
= 15V
V
V
CC = 600V
D = 15V
D
5
4
T
T
j
= 25°C
= 125°C
T
T
j
= 25°C
= 125°C
3
2
j
j
2
Inductive load
Inductive load
10–1
10–1
101
2
3
4 5
7
102
2
3
4 5
7
103
101
2
3
4 5
7
102
2
3
4 5 7
103
COLLECTOR CURRENT I
C
(A)
COLLECTOR CURRENT IC (A)
Jul. 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100RSE120
FLAT-BASE TYPE
INSULATED PACKAGE
DIODE FORWARD CHARACTERISTICS
(TYPICAL)
DIODE REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
102
100
102
VD = 15V
7
7
7
I
rr
5
4
5
4
5
4
3
3
3
2
2
2
t
rr
101
7
10–1
7
101
7
5
4
3
5
4
3
5
4
3
V
V
CC = 600V
= 15V
D
T
T
j
= 25°C
= 125°C
2
2
2
T
T
j
j
= 25°C
= 125°C
j
Inductive load
100
100
10–2
0
0.5
1
1.5
2
2.5
3
101
2
3
4 5
7
102
2
3
4 5 7
103
–
IC (A)
EMITTER-COLLECTOR VOLTAGE VEC (V)
COLLECTOR RECOVERY CURRENT
TRANSIENT THERMAL
I
D
VS. f
c
CHARACTERISTICS
(TYPICAL)
IMPEDANCE CHARACTERISTICS
(IGBT PART)
120
100
80
60
40
20
0
101
7
VD = 15V
5
T
j
= 25°C
3
2
N-side
100
7
5
3
2
10–1
7
5
3
2
10–2
P-side
7
5
Single Pulse
Per unit base = Rth(j – c)Q = 0.21°C/W
3
2
10–3
10–32 3 5 710–22 3 5 710–12 3 5 7100 2 3 57101
0
5
10
15
20
(kHz)
25
CARRIER FREQUENCY f
c
TIME (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi PART)
101
7
5
3
2
100
7
5
3
2
10–1
7
5
3
2
10–2
7
5
3
2
Single Pulse
Per unit base = Rth(j – c)F = 0.35°C/W
10–3
10–32 3 5 710–22 3 5 710–12 3 5 7100 2 3 57101
TIME (s)
Jul. 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100RSE120
FLAT-BASE TYPE
INSULATED PACKAGE
PERFORMANCE CURVES (Brake Part)
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. Ic) CHARACTERISTICS
(TYPICAL)
60
50
40
30
20
10
0
3
T
j
= 25°C
2.5
2
V
D
= 17V
15V
13V
1.5
1
VD = 15V
0.5
0
T
T
j
= 25°C
= 125°C
j
0
0.5
1
1.5
2
2.5
3
0
10
20
30
40
50
60
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. V
D
) CHARACTERISTICS
DIODE FORWARD CHARACTERISTICS
(TYPICAL)
(TYPICAL)
3
2.5
2
102
7
VD = 15V
5
4
3
2
1.5
1
101
7
5
4
3
IC = 50A
0.5
0
2
T
T
j
j
= 25°C
= 125°C
T
T
j
= 25°C
= 125°C
j
100
12
13
14
15
16
17
18
(V)
0
0.5
1
1.5
2
2.5
CONTROL SUPPLY VOLTAGE V
D
EMITTER-COLLECTOR VOLTAGE VEC (V)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT PART)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi PART)
101
7
101
7
5
5
3
3
2
2
100
7
100
7
5
5
3
3
2
2
10–1
10–1
7
5
7
5
3
3
2
2
10–2
10–2
7
5
7
5
Single Pulse
Per unit base = Rth(j – c)Q = 0.30°C/W
Single Pulse
Per unit base = Rth(j – c)F = 0.80°C/W
3
2
3
2
10–3
10–3
10–32 3 5 710–22 3 5 710–12 3 5 7100 2 3 57101
10–32 3 5 710–22 3 5 710–12 3 5 7100 2 3 57101
TIME (s)
TIME (s)
Jul. 2005
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