PM75B4LA060 [MITSUBISHI]
FLAT-BASE TYPE INSULATED PACKAGE; FLAT -BASE型绝缘包装
| 型号： | PM75B4LA060 |
| 厂家： | 
Mitsubishi Group |
| 描述： | FLAT-BASE TYPE INSULATED PACKAGE |
| 文件： | 总8页 (文件大小：146K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B4LA060
FLAT-BASE TYPE
INSULATED PACKAGE
PM75B4LA060
FEATURE
a) Adopting new 5th generation IGBT (CSTBTTM) chip, which
performance is improved by 1µm fine rule process.
For example, typical Vce(sat)=1.55V @Tj=125°C
b) Over-temperature protection by detecting Tj of the CSTBTTM
chips and error output is possible from all each conserva-
tion upper and lower arm of IPM.
c) New small package
Reduce the package size by 10%, thickness by 22% from
S-DASH series.
• 2φ 75A, 600V Current-sense IGBT type inverter
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for, short-
circuit, over-temperature & under-voltage (P-Fo available
from upper arm devices)
• UL Recognized Yellow Card No.E80276(N)
File No.E80271
APPLICATION
Photo voltaic power conditioner
PACKAGE OUTLINES
Dimensions in mm
L
A
B
E
L
11
120
106
7
3.25
16
19.75
16
16
16
15.25
6-2
2-φ5.5
MOUNTING HOLES
3
(19.75)
3-2
3-2
3-2
1
5
9
13
19
B
U
V
W
6-M5 NUTS
22 +–
1
10.75
12
0.5
32.75
23
23
23
Terminal code
19-■0.5
1. VUPC
2. UFO
3. UP
8. VVP1
9. NC
15. NC
16. UN
17. VN
18. NC
19. Fo
10. NC
11. NC
12. NC
13. VNC
14. VN1
4. VUP1
5. VVPC
6. VFO
7. VP
Oct. 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B4LA060
FLAT-BASE TYPE
INSULATED PACKAGE
INTERNAL FUNCTIONS BLOCK DIAGRAM
VP
VPC
V
VP1
UP
VUP1
V
NC NC
V
N1
VN
UN
NC F
O
NC NC NC NC
V
VF
O
V
UPC
UFO
1.5k
1.5k
1.5k
GND IN Fo Vcc
GND SC OT OUT
GND IN Fo Vcc
GND SC OT OUT
GND IN Fo Vcc
GND SC OT OUT
GND IN Fo Vcc
GND SC OT OUT
B
N
W
V
U
P
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
VCES
±IC
Parameter
Collector-Emitter Voltage
Collector Current
Condition
Ratings
Unit
V
A
VD = 15V, VCIN = 15V
TC = 25°C
600
75
±ICP
PC
Collector Current (Peak)
Collector Dissipation
Junction Temperature
TC = 25°C
150
390
–20 ~ +150
A
W
°C
TC = 25°C
Tj
CONTROL PART
Symbol
Parameter
Supply Voltage
Condition
Applied between : VUP1-VUPC
VVP1-VVPC, VN1-VNC
Ratings
20
Unit
V
VD
Applied between : UP-VUPC, VP-VVPC
UN • VN-VNC
VCIN
Input Voltage
20
V
VFO
IFO
Fault Output Supply Voltage
Fault Output Current
Applied between : UFO-VUPC, VFO-VVPC, FO-VNC
Sink current at UFO, VFO, FO terminals
20
20
V
mA
Oct. 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B4LA060
FLAT-BASE TYPE
INSULATED PACKAGE
TOTAL SYSTEM
Ratings
Unit
Symbol
Parameter
Condition
Supply Voltage Protected by
SC
VD = 13.5 ~ 16.5V, Inverter Part,
Tj = +125°C Start
450
V
VCC(PROT)
VCC(surge) Supply Voltage (Surge)
Applied between : P-N, Surge value
500
–40 ~ +125
2500
V
°C
Storage Temperature
Isolation Voltage
Tstg
Viso
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
Vrms
THERMAL RESISTANCES
Limits
Typ.
—
Condition
Symbol
Unit
Parameter
Min.
—
—
Max.
0.32
0.53
Inverter IGBT part (per 1/4 module)
Inverter FWDi part (per 1/4 module)
Case to fin, (per 1 module)
(Note-1)
(Note-1)
Rth(j-c)Q
Rth(j-c)F
Junction to case Thermal
Resistances
—
°C/W
Rth(c-f)
Contact Thermal Resistance
0.038
—
—
Thermal grease applied
(Note-1)
(Note-1) Tc (under the chip) measurement point is below.
(unit : mm)
VN
arm
UP VP UN
axis
IGBT FWDi IGBT FWDi IGBT FWDi IGBT FWDi
X
Y
30.4
–8.3
30.4
–0.8
61.7
–8.3
61.7
–0.8
39.7
6.3
39.7
–1.2
52.4
6.3
52.4
–1.2
Bottom view
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Limits
Typ.
1.7
1.55
2.2
0.7
0.1
0.2
0.9
0.2
—
Unit
Condition
Symbol
VCE(sat)
Parameter
Collector-Emitter
Min.
—
—
—
0.3
—
Max.
2.3
2.0
3.3
1.4
0.2
0.4
1.8
0.4
1
VD = 15V, IC = 75A
VCIN = 0V
Tj = 25°C
(Fig. 1) Tj = 125°C
–IC = 75A, VD = 15V, VCIN = 15V
V
V
Saturation Voltage
(Fig. 2)
VEC
ton
FWDi Forward Voltage
VD = 15V, VCIN = 0V↔15V
VCC = 300V, IC = 75A
Tj = 125°C
trr
µs
—
—
tc(on)
toff
Switching Time
Inductive Load
(Fig. 3,4)
—
—
—
tc(off)
Collector-Emitter
Cutoff Current
Tj = 25°C
Tj = 125°C
ICES
V
CE = VCES, VCIN = 15V
(Fig. 5)
mA
—
10
Oct. 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B4LA060
FLAT-BASE TYPE
INSULATED PACKAGE
CONTROL PART
Limits
Unit
Symbol
Parameter
Circuit Current
Condition
Min.
—
Typ.
15
6
Max.
25
VN1-VNC
ID
VD = 15V, VCIN = 15V
mA
V*P1-V*PC
—
12
Input ON Threshold Voltage
Input OFF Threshold Voltage
Short Circuit Trip Level
Short Circuit Current Delay
Time
Vth(ON)
Vth(OFF)
SC
1.2
1.7
150
1.5
2.0
—
1.8
2.3
—
Applied between : UP-VUPC, VP-VVPC
UN • VN-VNC
V
A
–20 ≤ Tj ≤ 125°C, VD = 15V
(Fig. 3,6)
(Fig. 3,6)
VD = 15V
µs
toff(SC)
—
0.2
—
VD = 15V
Trip level
OT
135
—
145
125
12.0
12.5
—
—
—
12.5
—
°C
V
Over Temperature Protection
Detect Tj of IGBT chip
Reset level
Trip level
OTr
Supply Circuit Under-Voltage
Protection
UV
11.5
—
–20 ≤ Tj ≤ 125°C
VD = 15V, VFO = 15V
VD = 15V
Reset level
UVr
IFO(H)
IFO(L)
—
0.01
15
(Note-2)
(Note-2)
mA
ms
Fault Output Current
—
10
Minimum Fault Output Pulse
Width
tFO
1.0
1.8
—
(Note-2) Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to
protect it.
MECHANICAL RATINGS AND CHARACTERISTICS
Limits
Typ.
3.0
3.0
380
Condition
—
Unit
Parameter
Mounting torque
Symbol
Min.
2.5
2.5
—
Max.
3.5
3.5
—
—
—
—
Main terminal
Mounting part
screw : M5
screw : M5
N • m
N • m
g
Mounting torque
Weight
RECOMMENDED CONDITIONS FOR USE
Symbol Parameter
Supply Voltage
Condition
Recommended value
Unit
V
VCC
Applied across P-N terminals
≤ 450
Applied between : VUP1-VUPC, VVP1-VVPC
VN1-VNC
VD
Control Supply Voltage
15 ± 1.5
V
V
(Note-3)
(Fig. 7)
Input ON Voltage
Input OFF Voltage
VCIN(ON)
Applied between : UP-VUPC, VP-VVPC
UN • VN-VNC
≤ 0.8
≥ 9.0
VCIN(OFF)
kHz
µs
PWM Input Frequency
fPWM
tdead
Using Application Circuit of Fig. 8
For IPM’s each input signals
≤ 20
Arm Shoot-through
Blocking Time
≥ 2.0
(Note-3) With ripple satisfying the following conditions : dv/dt swing ≤ ±5V/µs, Variation ≤ 2V peak to peak
Oct. 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B4LA060
FLAT-BASE TYPE
INSULATED PACKAGE
PRECAUTIONS FOR TESTING
1. Before appling any control supply voltage (VD), the input terminals should be pulled up by resistores, etc. to their corre-
sponding supply voltage and each input signal should be kept off state.
After this, the specified ON and OFF level setting for each input signal should be done.
2. When performing “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not be al-
lowed to rise above VCES rating of the device.
(These test should not be done by using a curve tracer or its equivalent.)
P, (U,V)
P, (U,V)
IN
IN
Fo
Fo
Ic
–Ic
V
V
VCIN
VCIN
(15V)
(0V)
U,V, (N)
U,V, (N)
VD (all)
VD (all)
Fig. 1 VCE(sat) Test
Fig. 2 VEC Test
a) Lower Arm Switching
P
Fo
trr
Irr
VCE
Signal input
(Upper Arm)
VCIN
(15V)
Ic
U,V
Vcc
CS
90%
Fo
Signal input
(Lower Arm)
90%
VCIN
N
P
10%
VD (all)
Fo
Ic
10%
10%
10%
b) Upper Arm Switching
tc(on)
tc(off)
Signal input
VCIN
VCIN
(Upper Arm)
U,V
Vcc
CS
td(on)
tr
td(off)
tf
Fo
VCIN
(15V)
Signal input
(Lower Arm)
(ton= td(on) + tr)
(toff= td(off) + tf)
N
Ic
VD (all)
Fig. 3 Switching Time and SC Test Circuit
Fig. 4 Switching Time Test Waveform
VCIN
Short Circuit Current
Constant Current
P, (U,V)
A
IN
SC Trip
Fo
Pulse
VCE
VCIN
(15V)
Ic
U,V, (N)
Fo
VD (all)
toff(SC)
Fig. 5 ICES Test
Fig. 6 SC Test Waveform
IPM’ input signal VCIN
(Upper Arm)
1.5V
2V
t
1.5V
t
0V
IPM’ input signal VCIN
(Lower Arm)
0V
2V
1.5V
2V
t
t
dead
dead
t
dead
1.5V: Input on threshold voltage Vth(on) typical value, 2V: Input off threshold voltage Vth(off) typical value
Fig. 7 Dead Time Measurement Point Example
Oct. 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B4LA060
FLAT-BASE TYPE
INSULATED PACKAGE
P
20k
VUP1
Vcc
OUT
I
I
F
→
1.5k
O
UF
OT
SC
Fo
IN
UP
≥0.1µ ≥10µ
U
V
UPC
GND GND
20k
V
VP1
Vcc
OUT
OT
F
→
1.5k
O
~
VF
Fo
IN
AC Output
SC
VP
≥0.1µ ≥10µ
V
V
VPC
GND GND
NC
NC
NC
NC
W
20k
Vcc
OUT
OT
I
I
F
→
Fo
IN
SC
UN
VN
≥0.1µ ≥10µ
N
GND GND
20k
Vcc
OUT
OT
F
→
Fo
IN
SC
≥0.1µ ≥10µ
GND GND
VN1
NC
VNC
B
1.5k
FO
NC
Fig. 8 Application Example Circuit
NOTES FOR STABLE AND SAFE OPERATION ;
Design the PCB pattern to minimize wiring length between opto-coupler and IPM’s input terminal, and also to minimize the
stray capacity between the input and output wirings of opto-coupler.
•
Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler.
Fast switching opto-couplers: tPLH, tPHL ≤ 0.8µs, Use High CMR type.
Slow switching opto-coupler: CTR > 100%
•
•
•
•
Use 3 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the
power supply.
Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N
terminal.
•
Oct. 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B4LA060
FLAT-BASE TYPE
INSULATED PACKAGE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. Ic) CHARACTERISTICS
(TYPICAL)
(TYPICAL)
100
80
60
40
20
0
2
T
j
= 25°C
VD = 15V
15V 13V
VD = 17V
1.5
1
0.5
0
T
T
j
j
= 25°C
= 125°C
0
0.5
1
1.5
2
0
20
40
60
80
(A)
100
COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
COLLECTOR CURRENT I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. V
D) CHARACTERISTICS
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
(TYPICAL)
2
1.5
1
100
7
5
t
c(off)
3
2
t
c(on)
c(off)
10–1
t
7
5
V
V
CC = 300V
= 15V
0.5
D
3
2
IC = 75A
T
T
j
= 25°C
= 125°C
T
T
j
= 25°C
= 125°C
j
j
Inductive load
0
10–2
12
13
14
15
16
17
18
(V)
100
2
3
5
7
101
2
3
5
7
102
CONTROL SUPPLY VOLTAGE V
D
COLLECTOR CURRENT I
C
(A)
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
SWITCHING LOSS CHARACTERISTICS
(TYPICAL)
101
101
7
V
V
CC = 300V
= 15V
V
V
CC = 300V
= 15V
7
5
5
D
D
T
T
j
= 25°C
= 125°C
3
2
T
T
j
= 25°C
= 125°C
E
SW(on)
j
j
3
2
Inductive load
Inductive load
100
7
5
100
ESW(on)
3
2
t
off
7
5
E
SW(off)
t
on
10–1
7
5
3
2
t
on
3
E
SW(off)
t
off
3
2
10–1
10–2
100
2
3
5
7
101
2
5
7
102
100
2
3
5
7
101
2
3
5
7
102
COLLECTOR CURRENT I
C
(A)
COLLECTOR CURRENT I
C
(A)
Oct. 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B4LA060
FLAT-BASE TYPE
INSULATED PACKAGE
FWDi FORWARD VOLTAGE CHARACTERISTICS
FWDi REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
(TYPICAL)
102
7
5
101
102
VD = 15V
7
5
7
5
3
2
3
2
3
2
I
rr
100
101
V
V
CC = 300V
= 15V
= 25°C
7
5
7
5
D
T
T
j
101
7
3
2
3
2
j
= 125°C
Inductive load
5
10–1
100
7
5
t
rr
7
5
3
2
3
2
3
2
T
T
j
j
= 25°C
= 125°C
10–1
100
10–2
0
0.5
1
1.5
2
2.5
100
2
3
5
7
101
2
3
5
7
102
EMITTER-COLLECTOR VOLTAGE VEC (V)
COLLECTOR CURRENT I
C
(A)
FWDi REVERSE RECOVERY LOSS CHARACTERISTICS
(TYPICAL)
101
V
V
CC = 300V
= 15V
7
5
D
3
2
T
T
j
= 25°C
= 125°C
j
Inductive load
100
7
5
3
2
10–1
7
5
3
2
Err
10–2
100
2
3
5
7
101
2
3
5
7
102
(A)
COLLECTOR REVERSE CURRENT –I
C
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT PART)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi PART)
100
100
7
5
7
5
3
2
3
2
10–1
7
10–1
7
5
5
3
2
3
2
10–2
7
10–2
7
5
5
3
2
3
2
Single Pulse
Per unit base = Rth(j – c)F = 0.53°C/W
Single Pulse
Per unit base = Rth(j – c)Q = 0.32°C/W
10–3
10–3
10–52 3 5 710–42 3 5 710–32 3 5 710–22 3 5 710–12 3 5 7100 2 3 57101
10–52 3 5 710–42 3 5 710–32 3 5 710–22 3 5 710–12 3 5 7100 2 3 57101
TIME (s)
TIME (s)
Oct. 2005
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