PM75CLB120_05 [MITSUBISHI]
FLAT-BASE TYPE INSULATED PACKAGE; FLAT -BASE型绝缘包装
| 型号： | PM75CLB120_05 |
| 厂家： | 
Mitsubishi Group |
| 描述： | FLAT-BASE TYPE INSULATED PACKAGE |
| 文件： | 总8页 (文件大小：135K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75CLB120
FLAT-BASE TYPE
INSULATED PACKAGE
PM75CLB120
FEATURE
a) Adopting new 5th generation IGBT (CSTBT) chip, which
performance is improved by 1µm fine rule process.
For example, typical Vce(sat)=1.9V @Tj=125°C
b) I adopt the over-temperature conservation by Tj detection of
CSTBT chip, and error output is possible from all each con-
servation upper and lower arm of IPM.
c) New small package
Reduce the package size by 32%, thickness by 22% from
S-DASH series.
• 3φ 75A, 1200V Current-sense IGBT type inverter
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for, short-
circuit, over-temperature & under-voltage (P-Fo available
from upper arm devices)
• Acoustic noise-less 11kW/15kW class inverter application
• UL Recognized
Yellow Card No.E80276(N)
File No.E80271
APPLICATION
General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES
Dimensions in mm
120
7
106 ±0.25
66.5
19.75
3.25
17
16
16
3-2
16
16
3-2
15.25
6-2
2-φ5.5
3-2
MOUNTING HOLES
1.5
3
1
5
9
13
19
B
U
V
W
9.5
4
4
4
4
4
4
4 4
2.5
19.5
22
23
23
98.25
23
Terminal code
1. VUPC 11. WP
7.75
2. UFO
3. UP
12. VWP1
13. VNC
19-■0.5
4. VUP1 14. VN1
5. VVPC 15. NC
6. VFO
7. VP
16. UN
17. VN
8. VVP1 18. WN
9. VWPC 19. Fo
10. WFO
May 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75CLB120
FLAT-BASE TYPE
INSULATED PACKAGE
INTERNAL FUNCTIONS BLOCK DIAGRAM
W
WPC
P
V
O
WP1
VP
V
O
VP1
UP
VUP1
UFO
NC Fo
VNC
WN
VN1
VN
UN
V
WF
VVPC
VF
VUPC
1.5k
1.5k
1.5k
1.5k
Gnd In Fo Vcc
Gnd In Fo Vcc
Gnd In Fo Vcc
Gnd In Fo Vcc
Gnd In Fo Vcc
Gnd In Fo Vcc
Gnd Si Out OT
Gnd Si Out OT
Gnd Si Out OT
Gnd Si Out OT
Gnd Si Out OT
Gnd Si Out OT
NC
N
W
V
U
P
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
VCES
±IC
Parameter
Collector-Emitter Voltage
Collector Current
Condition
Ratings
1200
75
Unit
V
A
VD = 15V, VCIN = 15V
TC = 25°C
±ICP
PC
Collector Current (Peak)
Collector Dissipation
Junction Temperature
TC = 25°C
150
595
A
W
°C
TC = 25°C
(Note-1)
Tj
–20 ~ +150
CONTROL PART
Symbol
Parameter
Supply Voltage
Condition
Applied between : VUP1-VUPC
VVP1-VVPC, VWP1-VWPC, VN1-VNC
Applied between : UP-VUPC, VP-VVPC
Ratings
20
Unit
V
VD
VCIN
20
V
Input Voltage
WP-VWPC, UN • VN • WN-VNC
Applied between : UFO-VUPC, VFO-VVPC, WFO-VWPC
FO-VNC
VFO
IFO
Fault Output Supply Voltage
Fault Output Current
20
20
V
Sink current at UFO, VFO, WFO, FO terminals
mA
May 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75CLB120
FLAT-BASE TYPE
INSULATED PACKAGE
TOTAL SYSTEM
Ratings
Unit
Symbol
Parameter
Condition
Supply Voltage Protected by
SC
VD = 13.5 ~ 16.5V, Inverter Part,
Tj = +125°C Start
VCC(PROT)
800
V
VCC(surge) Supply Voltage (Surge)
Applied between : P-N, Surge value
1000
–40 ~ +125
2500
V
Storage Temperature
Isolation Voltage
Tstg
Viso
°C
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
Vrms
THERMAL RESISTANCES
Limits
Typ.
—
Condition
Symbol
Unit
Parameter
Min.
—
Max.
0.21*
0.30*
Rth(j-c)Q
Rth(j-c)F
Inverter IGBT (per 1 element)
Inverter FWDi (per 1 element)
Case to fin, (per 1 module)
Thermal grease applied
(Note-1)
(Note-1)
Junction to case Thermal
Resistances
—
—
°C/W
Rth(c-f)
Contact Thermal Resistance
0.038
—
—
(Note-1)
* If you use this value, Rth(f-a) should be measured just under the chips.
(Note-1) TC (under the chip) measurement point is below.
(Unit : mm)
WN
arm
UP
VP
WP
UN
VN
axis
IGBT FWDi IGBT FWDi IGBT FWDi IGBT FWDi IGBT FWDi IGBT FWDi
X
Y
28.3
28.3
2.0
65.0
65.0
2.0
87.0
87.0
2.0
39.3
6.2
39.3
54.0
6.2
54.0
76.0
6.2
76.0
–8.2
–8.2
–8.2
–4.0
–4.0
–4.0
Bottom view
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Limits
Typ.
1.8
1.9
2.5
1.0
0.5
0.4
2.0
0.7
—
Unit
Condition
Symbol
VCE(sat)
Parameter
Collector-Emitter
Min.
Max.
2.3
2.4
3.5
2.5
0.8
1.0
3.0
1.2
1
—
—
—
0.5
—
—
—
—
—
—
VD = 15V, IC = 75A
VCIN = 0V
Tj = 25°C
V
V
Saturation Voltage
(Fig. 1) Tj = 125°C
–IC = 75A, VD = 15V, VCIN = 15V
(Fig. 2)
VEC
ton
FWDi Forward Voltage
VD = 15V, VCIN = 0V↔15V
VCC = 600V, IC = 75A
Tj = 125°C
trr
µs
tc(on)
toff
Switching Time
Inductive Load
(Fig. 3,4)
Tj = 25°C
Tj = 125°C
tc(off)
Collector-Emitter
Cutoff Current
ICES
V
CE = VCES, VCIN = 15V
(Fig. 5)
mA
—
10
May 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75CLB120
FLAT-BASE TYPE
INSULATED PACKAGE
CONTROL PART
Limits
Unit
Symbol
Parameter
Circuit Current
Condition
Min.
—
Typ.
15
5
Max.
25
VN1-VNC
ID
VD = 15V, VCIN = 15V
mA
V*P1-V*PC
—
10
Input ON Threshold Voltage
Input OFF Threshold Voltage
Short Circuit Trip Level
Short Circuit Current Delay
Time
Vth(ON)
Vth(OFF)
SC
Applied between : UP-VUPC, VP-VVPC, WP-VWPC
1.2
1.7
150
1.5
2.0
—
1.8
2.3
—
V
A
UN • VN • WN-VNC
–20 ≤ Tj ≤ 125°C, VD = 15V
(Fig. 3,6)
(Fig. 3,6)
Trip level
VD = 15V
µs
toff(SC)
—
0.2
—
VD = 15V
OT
135
—
145
125
12.0
12.5
—
—
—
12.5
—
°C
V
Over Temperature Protection
Detect Tj of IGBT chip
Reset level
Trip level
OTr
Supply Circuit Under-Voltage
Protection
UV
11.5
—
–20 ≤ Tj ≤ 125°C
VD = 15V, VFO = 15V
VD = 15V
Reset level
UVr
IFO(H)
IFO(L)
—
0.01
15
mA
ms
(Note-2)
(Note-2)
Fault Output Current
—
10
Minimum Fault Output Pulse
Width
tFO
1.0
1.8
—
(Note-2) Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to
protect it.
MECHANICAL RATINGS AND CHARACTERISTICS
Limits
Typ.
3.0
Condition
Unit
Parameter
Mounting torque
Weight
Symbol
Min.
2.5
—
Max.
3.5
—
—
—
Mounting part
screw : M5
N • m
g
340
—
RECOMMENDED CONDITIONS FOR USE
Symbol Parameter
Supply Voltage
Condition
Recommended value
Unit
V
VCC
Applied across P-N terminals
≤ 800
Applied between : VUP1-VUPC, VVP1-VVPC
VWP1-VWPC, VN1-VNC
VD
Control Supply Voltage
15.0 ± 1.5
V
(Note-3)
Input ON Voltage
Input OFF Voltage
PWM Input Frequency
Arm Shoot-through
Blocking Time
VCIN(ON)
VCIN(OFF)
fPWM
Applied between : UP-VUPC, VP-VVPC, WP-VWPC
UN • VN • WN-VNC
≤ 0.8
≥ 9.0
≤ 20
V
kHz
µs
Using Application Circuit of Fig. 8
tdead
For IPM’s each input signals
(Fig. 7)
≥ 2.5
(Note-3) With ripple satisfying the following conditions: dv/dt swing ≤ ±5V/µs, Variation ≤ 2V peak to peak
May 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75CLB120
FLAT-BASE TYPE
INSULATED PACKAGE
PRECAUTIONS FOR TESTING
1. Before appling any control supply voltage (VD), the input terminals should be pulled up by resistores, etc. to their corre-
sponding supply voltage and each input signal should be kept off state.
After this, the specified ON and OFF level setting for each input signal should be done.
2. When performing “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not be al-
lowed to rise above VCES rating of the device.
(These test should not be done by using a curve tracer or its equivalent.)
P, (U,V,W)
P, (U,V,W)
IN
IN
Fo
Fo
Ic
–Ic
V
V
V
CIN
(15V)
V
CIN
(0V)
U,V,W, (N)
U,V,W, (N)
V
D
(all)
VD (all)
Fig. 1 VCE(sat) Test
Fig. 2 VEC Test
a) Lower Arm Switching
P
Fo
trr
Irr
V
CE
Signal input
(Upper Arm)
V
(15V)
CIN
Ic
U,V,W
Vcc
C
S
90%
Fo
Signal input
(Lower Arm)
90%
V
CIN
N
P
10%
V
D
(all)
Fo
Ic
10%
10%
10%
b) Upper Arm Switching
tc (on)
tc (off)
Signal input
(Upper Arm)
VCIN
VCIN
U,V,W
Vcc
C
S
td (on)
tr
td (off)
tf
Fo
V
(15V)
CIN
Signal input
(Lower Arm)
(ton= td (on) + tr)
(toff= td (off) + tf)
N
Ic
VD
(all)
Fig. 3 Switching time and SC test circuit
Fig. 4 Switching time test waveform
VCIN
Short Circuit Current
P, (U,V,W)
A
Constant Current
SC
IN
Fo
Pulse
VCE
VCIN
(15V)
Ic
U,V,W, (N)
Fo
VD
(all)
toff(SC)
Fig. 5 ICES Test
Fig. 6 SC test waveform
IPM’ input signal
(Upper Arm)
0V
V
V
CIN
CIN
1.5V
2V
t
1.5V
t
IPM’ input signal
(Lower Arm)
0V
2V
1.5V
2V
t
t
dead
dead
t
dead
1.5V: Input on threshold voltage Vth(on) typical value, 2V: Input off threshold voltage Vth(off) typical value
Fig. 7 Dead time measurement point example
May 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75CLB120
FLAT-BASE TYPE
INSULATED PACKAGE
P
≥10µ
20k
VUP1
UFo
OT
OUT
Vcc
Fo
■
1.5k
1.5k
1.5k
+
VD
IF
Si
UP
–
In
U
VUPC
GND GND
≥0.1µ
VVP1
VFo
OT
OUT
Vcc
Fo
Si
V
D
D
VP
In
V
VVPC
GND GND
M
VWP1
WFo
OT
OUT
Vcc
Fo
Si
V
WP
In
W
VWPC
GND GND
20k
OT
Vcc
■
OUT
≥10µ
Fo
IF
Si
UN
In
GND GND
≥0.1µ
N
OT
20k
Vcc
■
OUT
≥10µ
Fo
IF
Si
VN
In
GND GND
≥0.1µ
20k
VN1
WN
OT
Vcc
■
≥10µ
OUT
Si
In
Fo
IF
VD
GND GND
NC
≥0.1µ
VNC
NC
Fo
1k
5V
1.5k
: Interface which is the same as the U-phase
Fig. 8 Application Example Circuit
NOTES FOR STABLE AND SAFE OPERATION ;
Design the PCB pattern to minimize wiring length between opto-coupler and IPM’s input terminal, and also to minimize the
•
stray capacity between the input and output wirings of opto-coupler.
Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler.
•
Fast switching opto-couplers: tPLH, tPHL ≤ 0.8µs, Use High CMR type.
•
Slow switching opto-coupler: CTR > 100%
•
Use 4 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the
•
power supply.
Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N
•
terminal.
Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line
•
and improve noise immunity of the system.
May 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75CLB120
FLAT-BASE TYPE
INSULATED PACKAGE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. Ic) CHARACTERISTICS
(INVERTER PART · TYPICAL)
2
(INVERTER PART · TYPICAL)
80
70
60
50
40
30
20
10
0
VD = 15V
Tj
= 25°C
V
D
= 17V
15V
13V
1.5
1
0.5
0
T
T
j
j
= 25°C
= 125°C
0
0.5
1
1.5
2
0
10 20 30 40 50 60 70 80
COLLECTOR CURRENT I (A)
COLLECTOR-EMITTER VOLTAGE VCE (V)
C
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. V
D
) CHARACTERISTICS
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
(INVERTER PART · TYPICAL)
2.5
2
101
7
V
CC = 600V
= 15V
V
D
5
4
3
Tj
= 25°C
Tj
= 125°C
Inductive load
2
1.5
1
t
c(off)
c(on)
t
c(off)
100
7
5
4
3
t
0.5
0
IC = 75A
tc(off)
2
Tj
= 25°C
Tj
= 125°C
10–1
12
13
14
15
16
17
18
(V)
100
2
3
4 5
7
101
2
3
4 5 7
102
CONTROL SUPPLY VOLTAGE V
D
COLLECTOR CURRENT IC (A)
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
SWITCHING LOSS CHARACTERISTICS
(TYPICAL)
101
7
102
7
5
4
3
5
4
3
ESW(on)
2
toff
101
7
5
4
3
toff
2
100
7
ton
2
ESW(off)
5
4
3
100
ESW(on)
V
CC = 600V
= 15V
V
CC = 600V
= 15V
7
5
4
3
ESW(off)
V
D
V
D
ESW(on)
T
j
= 25°C
= 125°C
Tj
= 25°C
ESW(off)
2
Tj
Tj
= 125°C
2
Inductive load
Inductive load
10–1
10–1
100
2
3
4 5
7
101
2
3
4 5
7
102
100
2
3
4 5
7
101
2
3
4 5 7
102
COLLECTOR CURRENT I
C
(A)
COLLECTOR CURRENT IC (A)
May 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75CLB120
FLAT-BASE TYPE
INSULATED PACKAGE
DIODE FORWARD CHARACTERISTICS
DIODE REVERSE RECOVERY CHARACTERISTICS
(INVERTER PART · TYPICAL)
(INVERTER PART · TYPICAL)
102
7
100
7
102
7
VD = 15V
trr
trr
Irr
Irr
5
4
3
5
4
3
5
4
3
2
2
2
101
7
10–1
7
101
7
5
4
3
5
4
3
5
4
3
V
V
CC = 600V
= 15V
D
T
T
j
= 25°C
= 125°C
2
2
2
T
T
j
j
= 25°C
= 125°C
j
Inductive load
100
100
10–2
0
0.5
1
1.5
2
2.5
3
100
2
3
4 5
7
101
2
3
4 5 7
102
EMITTER-COLLECTOR VOLTAGE VEC (V)
COLLECTOR RECOVERY CURRENT –I
C
(A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(INVERTER PART)
I
D
VS. f
c
CHARACTERISTICS
(TYPICAL)
100
50
40
30
20
10
0
7
5
VD = 15V
= 25°C
T
j
3
2
N-side
10–1
7
5
3
2
10–2
7
Single Pulse
IGBT Part;
Per unit base = Rth(j – c)Q = 0.21°C/W
FWDi Part;
Per unit base = Rth(j – c)F = 0.30°C/W
P-side
5
3
2
10–3
0
1
0
5
10
15
(kHz)
20
25
–52 3 5 7 –42 3 5 7 –32 3 5 7 –22 3 5 7 –12 3 5 7
2 3 57
10
10
10
10
10
10
10
f
c
TIME (s)
May 2005
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