PM75CTK060 [MITSUBISHI]
FLAT-BASE TYPE INSULATED PACKAGE; FLAT -BASE型绝缘包装
| 型号： | PM75CTK060 |
| 厂家： | 
Mitsubishi Group |
| 描述： | FLAT-BASE TYPE INSULATED PACKAGE |
| 文件： | 总6页 (文件大小：146K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI INTELLIGENT POWER MODULES
PM75CTK060
FLAT-BASE TYPE
INSULATED PACKAGE
PM75CTK060
¡600V, 75A Current-sense 6kHz IGBT
type inverter
¡Built in IGBT gate drive circuit
¡
Built in Faule OC, SC, OT & UV protection
Fault output
¡5.5/7.5kW class inverter application
APPLICATION
Air conditioner, mortor control
OUTLINE DRAWING
Dimensions in mm
A · B: TERMINAL NAME
1. VUPC
2. NC
10. NC
11. W
12. VWP1
13. VNC
14. VN1
15. NC
19. FO
P
20. P
21. NC
22. N
23. U
24. V
25. W
109 ±1
96 ±0.5
15–2.54±0.25
3. UP
4. VUP1
5. VVPC
6. NC
60.96 ±0.8
7.62 7.62 7.62
(
)
17.52
2.54 ±0.25
7. VP
16. U
17. V
18. W
N
8. VVP1
9. VWPC
N
N
1 2 3 4
5 6 7 8
9
11
13 15 17 19
10 12
14 16 18
4– R5
6.35 C1
0.6
(
)
t = 0.4
20
21
22
23
24
25
φ
1.65
6
( )
t = 0.8
P
B
N
U
V
W
MOUNTING
φ
A : DETAIL
B : DETAIL
(
)
16.75 12.5 ±0.25
12.5 ±0.25 12.5 ±0.25
12.5 ±0.25
4.5 HOLES
12.5 ±0.25
62.5 ±0.8
41
33
B
A
LABEL
Aug.1999
MITSUBISHI INTELLIGNET POWER MODULES
PM75CTK060
FLAT-BASE TYPE
INSULATED PACKAGE
EQUIVALENT CIRCUIT DIAGRAM
W
P
V
WP1
V
P
VVP1
U
P
VUP1
F
O
NC
VNC
W
N
V
N1
VN
UN
V
WPC NC
V
VPC NC
VUPC NC
19 15
13 18
14
17
16
9
11 10 12
5
7
6
8
1
3
2
4
Rfo
GND In F
O
V
CC
GND In F
O
V
CC
GND In F
O
V
CC
GND In
VCC
GND In
VCC
GND In
VCC
TEMP
GND Si Out
GND Si Out
GND Si Out
GND Si Out
GND Si Out
GND Si Out
Th
21
22
N
25
W
24
V
23
U
20
NC
P
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
VCES
±IC
Parameter
Collector-emitter voltage
Collector current
Conditions
VD = 15V, ICIN = 10mA
Ratings
600
Unit
V
TC = 25°C
TC = 25°C
TC = 25°C
75
A
±ICP
PC
Collector current (peak)
Collector dissipation
Junction temperature
150
A
134
W
°C
Tj
–20 ~ +150
CONTROL PART
Symbol
Parameter
Supply voltage
Conditions
Ratings
20
Unit
V
Applied between : VUP1-VUPC, VVP1-VVPC
VWP1-VWPC, VN1-VNC
VD
Applied between : UP-VUPC, VP-VVPC, WP-VWPC,
UN · VN · WN-VNC
mA
Input current
20
ICIN
Applied between : FO-VNC
VFO
IFO
Fault output supply voltage
Fault output current
20
20
V
Sink current of FO terminal
mA
Aug.1999
MITSUBISHI INTELLIGNET POWER MODULES
PM75CTK060
FLAT-BASE TYPE
INSULATED PACKAGE
TOTAL SYSTEM
Ratings
400
Symbol
Parameter
Supply voltage protected
by OC & SC
Conditions
Unit
V
VD = 13.5 ~ 16.5V,
VCC(PROT)
VCC
Inverter part, Tj = 125°C start
Applied between : P-N, operating time
Applied between : P-N, surge and non-operating time
(Note 1)
Supply voltage
450
500
V
V
VCC(surge) Supply voltage (surge)
TC
Module case operating temperature
Storage temperature
Isolation voltage
–20 ~ +100
–40 ~ +125
2500
°C
Tstg
Viso
°C
60Hz, sinusoidal, AC · 1 min
Vrms
Note 1 : TC measuring point is as shown below.
TC
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Limits
Typ.
1.8
Unit
V
Symbol
VCE(sat)
Parameter
Collector-emitter
Test conditions
IC = 75A, Tj = 25°C
Min.
—
Max.
2.7
2.78
3.3
2.4
0.3
1.1
3.6
1.2
1
VD = 15V, ICIN = 10mA
saturation voltage
—
1.85
2.2
IC = 75A, Tj = 125°C
–IC = 75A, VD = 15V, ICIN = 0mA
—
VEC
ton
FWDi forward voltage
V
0.6
—
1.2
µs
µs
µs
µs
µs
VD = 15V, ICIN = 0mA↔10mA
VCC = 300V, IC = 75A
Tj = 125°C
0.15
0.5
trr
—
tc(on)
toff
Switching time
—
2.8
(Per 1 arm) Inductive Load
tc(off)
—
0.6
Collector-emitter
cutoff current
Tj = 25°C
—
—
ICES
mA
VCE = VCES, ICIN = 0mA
Tj = 125°C
—
—
10
CONTROL PART
Limits
Typ.
40
Symbol
Parameter
Test conditions
VN1-VNC
Unit
mA
Min.
—
Max.
55
VD = 15V, ICIN = 0mA
ID
Circuit current
VXP1-VXPC
—
13
18
Applied between : UP-VUPC
,
VP-VVPC, WP-VWPC
1
3
5
I
th(ON)
th(OFF)
Input on threshold current
Input off threshold current
Over current trip level
Short circuit trip level
mA
mA
A
UN
·
VN · WN-VNC
1
115
—
3
5
I
–20°C ≤ Tj ≤ 125°C, VD = 15V
–20°C ≤ Tj ≤ 125°C, VD = 15V
VD = 15V
OC
161
241
10
—
SC
—
A
—
—
toff(OC)
OT
Over current delay time
µs
°C
°C
V
Base-plate
Trip level
100
—
110
90
120
—
Over temperature protection
Temperature detection, VD = 15V
OTr
Reset level
Trip level
UV
Supply circuit under
voltage protection
11.5
—
12.0
12.5
—
12.5
—
–20°C ≤ Tj ≤ 125°C
Reset level
UVr
V
IFO(H)
IFO(L)
—
0.01
15
mA
mA
Fault output current (Note 2)
VD = 15V, VFO = 15V
—
10
Minimum fault output pulse
VD = 15V
tFO
1.0
1.8
—
ms
width
(Note 2)
Note 2 : Fault output is given only when the internal OC, SC, OT & UV protection.
Fault output of OC, SC protection operate by lower arm.
Fault output of OC, SC protection given pulse.
Fault output of OT, UV protection given pulse while over level. (OT is only N side)
Aug.1999
MITSUBISHI INTELLIGNET POWER MODULES
PM75CTK060
FLAT-BASE TYPE
INSULATED PACKAGE
THERMAL RESISTANCES
Limits
Parameter
Junction to case
Symbol
Unit
Test conditions
Min.
—
Tye.
—
Max.
0.93
0.91
Rth(j-c)Q
Rth(j-c)F
Rth(c-f)
Inverter IGBT part, per 1/6 module
°C / W
°C / W
thermal resistances
Inverter FWDi part, per 1/6 module
—
—
Contact thermal resistance
Case to fin, thermal grease applied, per 1 module
—
—
0.036 °C / W
MECHANICAL RATINGS AND CHARACTERISTICS
Limits
Tye.
1.18
12
Symbol
Parameter
Mounting torque
Weight
Unit
Test conditions
Mounting screw : M4
Min.
0.98
10
Max.
1.47
15
N·m
kg·cm
g
—
—
—
150
—
RECOMMENDED CONDITIONS FOR USE
Symbol Parameter
Ratings
Test conditions
Applied between : P-N
Unit
V
VCC
≤ 400
Supply voltage
Applied between : VUP1-VUPC, VVP1-VVPC
VWP1-VWPC, VN1-VNC
VD
15 ± 1.5
V
(Note 3)
Input on current
≥ 5
≤ 1
≤ 8
≥ 3
ICIN(ON)
ICIN(OFF)
fPWM
mA
mA
kHz
µs
Applied between : UP, VP, WP, UN, VN, WN
Input off current
PWM input frequency
Arm shoot-through blocking time
Using application circuit Opto-coupler’s input signal
Using application circuit Opto-coupler’s input signal
tdead
Note 3 : Permissible ripple value : dv/dt ≤ ±5V/µs, Vripple ≤ 2VP-P
Aug.1999
MITSUBISHI INTELLIGNET POWER MODULES
PM75CTK060
FLAT-BASE TYPE
INSULATED PACKAGE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
(TYPICAL)
100
80
60
40
20
0
5
V
V
D
= 15V
T
V
j
= 25°C
CIN = 0V
CIN = 0V
15V
13V
T
T
j
j
= 25°C
= 125°C
4
3
2
1
0
VD = 17V
0
1
2
3
4
5
0
20 40 60 80 100 120 140 160
COLLECTOR CURRENT I (A)
C
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
SWITCHING TIME VS.
VOLTAGE VS. SUPPLY VOLTAGE
COLLECTOR CURRENT
(TYPICAL)
(TYPICAL)
5
101
7
I
V
C
= 75A
T
V
V
j
= 125°C
CC = 300V
= 15V
CIN = 0V
5
4
T
j
= 25°C
4
3
2
1
0
D
T
j
= 125°C
3
2
INDUCTIVE LOAD
t
t
off
on
100
7
t
c(off)
5
4
3
2
t
c(on)
10–1
12
14
16
18
20
7
101
2
3
4 5
7
102
2
3
4 5
(A)
7
SUPPLY VOLTAGE V
D
(V)
COLLECTOR CURRENT IC
FREE-WHEEL DIODE FORWARD
CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
102
7
100
102
7
V
V
D
= 15V
7
CIN = 15V
lrr
5
4
5
4
5
4
T
T
j
j
= 25°C
= 125°C
3
2
3
2
3
2
t
rr
101
7
10–1
7
101
7
5
4
5
4
5
4
T
V
V
j
= 125°C
3
2
3
2
3
2
CC = 300V
D
= 15V
INDUCTIVE LOAD
100
100
10–2
0
0.5
1
1.5
2
2.5
7
101
2
3
4 5
7
102
2
3
4 5
I
7
EMITTER-COLLECTOR VOLTAGE VEC (V)
COLLECTOR REVERSE CURRENT
C (A)
Aug.1999
MITSUBISHI INTELLIGNET POWER MODULES
PM75CTK060
FLAT-BASE TYPE
INSULATED PACKAGE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT per 1 element)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi per 1 element)
101
101
7
7
Single Pulse
Single Pulse
5
5
Rth(j – c)Q = 0.93°C/W
Rth(j – c)F = 0.91°C/W
3
2
3
2
100
7
100
5
7
5
3
2
3
2
10–1
10–1
7
5
7
5
3
2
3
2
10–2
10–2
7
5
7
5
3
2
3
2
10–3
10–3
10–32 3 5710–22 3 5710–12 3 57100 2 3 57101
10–32 3 5710–22 3 5710–12 3 57100 2 3 57101
TIME (s)
TIME (s)
Aug.1999
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