QM100DY-H [MITSUBISHI]

HIGH POWER SWITCHING USE INSULATED TYPE; 大功率开关使用绝缘型
QM100DY-H
型号: QM100DY-H
厂家: MITSUBISHI ELECTRIC SEMICONDUCTOR    MITSUBISHI ELECTRIC SEMICONDUCTOR
描述:

HIGH POWER SWITCHING USE INSULATED TYPE
大功率开关使用绝缘型

开关 高功率电源
文件: 总5页 (文件大小:99K)
下载:  下载PDF数据表文档文件

QM100DY-H1K

TRANSISTOR | BJT POWER MODULE | DARLINGTON | 100A I(C)

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121 ETC

QM100DY-HBK

HIGH POWER SWITCHING USE INSULATED TYPE

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79 MITSUBISHI

QM100DY-HK

HIGH POWER SWITCHING USE INSULATED TYPE

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219 MITSUBISHI

QM100DY-HK

Power Bipolar Transistor, 100A I(C), 2-Element, NPN, Silicon, Plastic/Epoxy, 9 Pin,

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1 MITSUBISHI

QM100E2Y2HK

TRANSISTOR | BJT POWER MODULE | DARLINGTON | 100A I(C)

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37 ETC

QM100E2Y-HK

TRANSISTOR | BJT POWER MODULE | DARLINGTON | 100A I(C)

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43 ETC

QM100E2Y-HK

Power Bipolar Transistor, 100A I(C), 1-Element, NPN, Silicon, Plastic/Epoxy, 6 Pin, MODULE-6

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8 MITSUBISHI

QM100E3Y2HK

TRANSISTOR | BJT POWER MODULE | DARLINGTON | 100A I(C)

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21 ETC

QM100E3Y-2HK

Power Bipolar Transistor, 100A I(C), 3-Element, NPN, Silicon, Plastic/Epoxy, 11 Pin, MODULE-9

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0 MITSUBISHI

QM100E3Y-2HK

Power Bipolar Transistor, 100A I(C), 3-Element, NPN, Silicon, Plastic/Epoxy, 11 Pin, MODULE-9

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0 MITSUBISHI

QM100E3Y-HK

TRANSISTOR | BJT POWER MODULE | DARLINGTON | 100A I(C)

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29 ETC

QM100E3Y-HK

Power Bipolar Transistor, 100A I(C), 1-Element, NPN, Silicon, Plastic/Epoxy, 6 Pin, MODULE-6

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0 MITSUBISHI

QM100HA-H

HIGH POWER SWITCHING USE INSULATED TYPE

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34 MITSUBISHI

QM100HA-H

HIGH POWER SWITCHING USE INSULATED TYPE

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72 MITSUBISHI

QM100HC-M

HIGH POWER SWITCHING USE NON-INSULATED TYPE

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60 MITSUBISHI