QM15DX-24 [MITSUBISHI]
MEDIUM POWER SWITCHING USE INSULATED TYPE; 中功率开关使用绝缘型
| 型号： | QM15DX-24 |
| 厂家： | 
Mitsubishi Group |
| 描述： | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| 文件： | 总5页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI TRANSISTOR MODULES
QM15DX-24
MEDIUM POWER SWITCHING USE
INSULATED TYPE
QM15DX-24
• IC
Collector current .......................... 15A
• VCEX Collector-emitter voltage ......... 1200V
• hFE DC current gain...............................75
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
AC motor controllers, UPS, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
92
φ5.5
80
B
2
B1
B
2
B1
C
CE
E
10.5 10.5 10.5 10.5
8.0 8.35
φ1.65
Tab#250,
t=0.8
E
CE
C
LABEL
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM15DX-24
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
VCEX (SUS)
VCEX
VCBO
VEBO
IC
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Conditions
Ratings
1200
1200
1200
7
Unit
V
IC=1A, VEB=2V
VEB=2V
V
Emitter open
Collector open
DC
V
V
15
A
–IC
Collector reverse current
Collector dissipation
Base current
DC (forward diode current)
TC=25°C
15
A
PC
150
1
W
A
IB
DC
Surge collector reverse current
(forward diode current)
–ICSM
Peak value of one cycle of 60Hz (half wave)
150
A
Tj
Junction temperature
Storage temperature
Isolation voltage
–40~+150
–40~+125
2500
°C
°C
Tstg
Viso
Charged part to case, AC for 1 minute
Mounting screw M5
V
1.47~1.96
15~20
N·m
kg·cm
g
—
—
Mounting torque
Weight
Typical value
155
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Limits
Typ.
—
Symbol
ICEX
Parameter
Test conditions
Unit
Min.
—
—
—
—
—
—
75
—
—
—
—
—
Max.
2.0
2.0
100
3.0
3.5
1.5
—
Collector cutoff current
VCE=1200V, VEB=2V
mA
mA
mA
V
—
ICBO
Collector cutoff current
VCB=1200V, Emitter open
VEB=7V
—
IEBO
Emitter cutoff current
—
VCE (sat)
VBE (sat)
–VCEO
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
IC=15A, IB=0.3A
—
V
—
–IC=15A (diode forward voltage)
IC=15A, VCE=5V
V
—
—
—
2.5
15
ton
µs
—
ts
Switching time
VCC=600V, IC=15A, IB1=–IB2=0.3A
µs
—
3.0
0.8
1.2
tf
µs
—
Rth (j-c) Q
Rth (j-c) R
Transistor part (per 1/2 module)
Diode part (per 1/2 module)
°C/W
°C/W
Thermal resistance
(junction to case)
—
Contact thermal resistance
(case to fin)
—
—
0.25
Rth (c-f)
Conductive grease applied (per 1/2 module)
°C/W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM15DX-24
MEDIUM POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
20
18
16
14
12
10
8
3
2
IB=0.4A
Tj=25°C
VCE=5V
I
B
B
=0.3A
=0.2A
103
7
I
5
4
I
B
B
=0.1A
3
2
I
=0.04A
6
102
7
4
5
4
3
T
j
=25°C
2
Tj=125°C
0
3 4 5 7 100
2
3 4 5 7 101
2
3
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
101
7
100
7
T
j
=25°C
V
CE=2.8V
5
5
4
4
VBE(sat)
3
2
3
2
10–1
7
100
7
V
CE(sat)
5
5
4
4
3
2
3
2
T
j
=25°C
Tj=125°C
IB=0.3A
10 –1
10–2
100
2
3 4 5 7 101
2
3 4 5 7 102
1.8
2.2
2.6
3.0
3.4
3.8
BASE-EMITTER VOLTAGE VBE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
3
2
5
4
3
2
1
0
IC=15A
ts
101
7
T
T
j
=25°C
IC=10A
j=125°C
V
I
CC=600V
5
B1=–IB2=0.3A
4
tf
3
2
100
7
ton
T
j
=25°C
=125°C
5
4
3
Tj
10 –3 2 345 710 –22 345 710 –1 2 345 7 100
100
2
3 4 5 7 101
2
3 4 5 7 102
BASE CURRENT IB (A)
COLLECTOR CURRENT IC (A)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM15DX-24
MEDIUM POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
3
2
40
35
30
25
20
15
10
5
T
j
=125°C
I
B2=–0.5A
101
7
t
s
5
4
3
2
t
f
T
j
=25°C
100
7
Tj=125°C
V
I
I
CC=600V
5
4
3
C=15A
B1=0.3A
0
10 –1
2
3 4 5 7 100
2
3 4 5 7 101
0
200 400 600 800 1000120014001600
BASE REVERSE CURRENT –IB2 (A)
COLLECTOR-EMITTER VOLTAGE VCE (V)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
102
100
SECOND
BREAKDOWN
AREA
7
5
90
80
70
60
50
40
30
20
10
0
3
2
101
7
5
3
2
100
7
5
COLLECTOR
DISSIPATION
3
T
C
=25°C
2
NON–REPETITIVE
10 –1
100 2 3 45 7 101 2 3 45 7 102 2 3 45 7 103
0
20 40 60 80 100 120 140 160
COLLECTOR-EMITTER VOLTAGE VCE (V)
CASE TEMPERATURE TC (°C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
100 2 3 45 7101
CHARACTERISTICS) (TYPICAL)
102
7
1.0
T
j
=25°C
Tj=125°C
5
0.8
0.6
0.4
4
3
2
101
7
5
4
3
2
0.2
0
100
10 –3 2 3 45 710 –2 2 3 45 710 –12 3 45 7 100
TIME (s)
0
0.4
0.8
1.2
1.6
2.0
COLLECTOR-EMITTER REVERSE VOLTAGE
–VCEO (V)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM15DX-24
MEDIUM POWER SWITCHING USE
INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
102
102
200
180
160
140
120
100
80
7
5
VCC=600V
IB1=–IB2=0.3A
Tj=25°C
3
2
Tj=125°C
101
101
Irr
7
5
3
2
100
7
5
Qrr
100
60
trr
40
3
20
2
10 –1
10 –1
0
100
10 –1 2 3 45 7100 2 3 45 7 101 2 3 45 7 102
2
3 4 5 7 101
2
3 4 5 7 102
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT IF (A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE )
100
101
2 3 45 7
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10 –3 2 3 45 710 –2 2 3 45 710 –12 3 45 7 100
TIME (s)
Feb.1999
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