QM30HC-2H [MITSUBISHI]
INDUCTION HEATER USE NON-INSULATED TYPE; 感应加热器采用非绝缘型
| 型号： | QM30HC-2H |
| 厂家： | 
Mitsubishi Group |
| 描述： | INDUCTION HEATER USE NON-INSULATED TYPE |
| 文件： | 总5页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI TRANSISTOR MODULES
QM30HC-2H
INDUCTION HEATER USE
NON-INSULATED TYPE
QM30HC-2H
• IC
Collector current .......................... 30A
• VCEX Collector-emitter voltage ......... 1600V
• hFE DC current gain...............................75
• Non-Insulated Type
APPLICATION
Induction heater for cooking
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
62
38
φ4.5
B
E
27
52
B
C (Case)
E
0.8
LABEL
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM30HC-2H
INDUCTION HEATER USE
NON-INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
VCEX (SUS)
VCEX
VCBO
VEBO
IC
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Conditions
Ratings
—
Unit
V
IC=1A, VEB=2V
VEB=2V
1600
1600
10
V
Emitter open
Collector open
DC
V
V
30
A
–IC
Collector reverse current
Collector dissipation
Base current
DC (forward diode current)
TC=25°C
30
A
PC
310
5
W
A
IB
DC
Surge collector reverse current
(forward diode current)
–ICSM
Peak value of one cycle of 60Hz (half wave)
300
A
Tj
Junction temperature
Storage temperature
Isolation voltage
–40~+150
–40~+125
—
°C
°C
Tstg
Viso
Charged part to case, AC for 1 minute
Mounting screw M4
V
0.98~1.47
10~15
50
N·m
kg·cm
g
—
—
Mounting torque
Weight
Typical value
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Limits
Typ.
—
Symbol
ICEX
Parameter
Test conditions
Unit
Min.
—
—
—
—
—
—
75
—
—
—
—
—
Max.
1.0
1.0
400
2.0
2.5
1.5
—
Collector cutoff current
VCE=1600V, VEB=2V
mA
mA
mA
V
—
ICBO
Collector cutoff current
VCB=1600V, Emitter open
VEB=10V
—
IEBO
Emitter cutoff current
—
VCE (sat)
VBE (sat)
–VCEO
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
IC=30A, IB=2A
—
V
—
–IC=30A (diode forward voltage)
IC=30A, VCE=5V
V
—
—
—
4.0
5.0
3.0
0.4
0.8
ton
µs
—
ts
Switching time
VCC=100V, IC=30A, IB1=2A, IB2=–5A
µs
—
tf
µs
—
Rth (j-c) Q
Rth (j-c) R
Transistor part
Diode part
°C/W
°C/W
Thermal resistance
(junction to case)
—
Contact thermal resistance
(case to fin)
—
—
0.25
Rth (c-f)
Conductive grease applied
°C/W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM30HC-2H
INDUCTION HEATER USE
NON-INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
103
7
100
80
60
40
20
0
T
T
j
=25°C
Tj
=25°C
j=125°C
5
4
V
CE=5.0V
I
I
B
B
=6A
=4A
3
2
IB
=2A
102
7
V
CE=2.0V
I
B
B
=1A
I
=0.5A
5
4
3
2
101
100
2
3 4 5 7 101
2
3 4 5 7 102
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
101
7
101
7
5
5
V
BE(sat)
4
4
3
2
3
2
100
7
100
7
5
5
4
4
3
2
3
2
V
CE(sat)
I
T
T
B
=2A
V
CE=5.0V
j
=25°C
=125°C
T
j=25°C
j
10 –1
10–1
100
2
3 4 5 7 101
2
3 4 5 7 102
1.4
1.8
2.2
2.6
3.0
3.4
BASE-EMITTER VOLTAGE VBE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
3
2
5
4
3
2
1
0
101
7
t
s
f
5
4
3
2
t
IC=50A
V
CC=100V
100
7
I
B1=2A
IC=10A
t
on
I
B2=–5A
T
T
IC=30A
j=25°C
5
4
3
T
j
j
=25°C
=125°C
j=125°C
T
10 –2 2 345 710 –1 2 345 7 100 2 345 7 101
100
2
3 4 5 7 101
2
3 4 5 7 102
BASE CURRENT IB (A)
COLLECTOR CURRENT IC (A)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM30HC-2H
INDUCTION HEATER USE
NON-INSULATED TYPE
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
3
2
101
7
5
4
3
2
t
s
V
CC=100V
t
f
100
7
5
4
3
I
I
C=30A
B1=2A
Tj
j
=25°C
=125°C
T
3 4 5 7 100
2
3 4 5 7 101
2 3
BASE REVERSE CURRENT –IB2 (A)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
102
100
90
80
70
60
50
40
30
20
10
0
SECOND
BREAKDOWN
AREA
7
5
tw=100µs
1ms
3
2
DC
500µs
101
7
5
COLLECTOR
DISSIPATION
3
2
100
7
5
3
T
C
=25°C
2
NON–REPETITIVE
10 –1
100
101
102 103
2 3 5 7
0
20 40 60 80 100 120 140 160
2 3 5 7
2 3 5 7
COLLECTOR-EMITTER VOLTAGE VCE (V)
CASE TEMPERATURE TC (°C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
100
101
2
2 3 45 7
CHARACTERISTICS) (TYPICAL)
102
7
0.5
5
0.4
0.3
0.2
4
3
2
101
7
5
4
3
2
0.1
0
T
T
j
=25°C
j=125°C
100
10 –3 2 3 45 710 –22 3 45 710 –12 3 45 7 100
0
0.4
0.8
1.2
1.6
2.0
TIME (s)
COLLECTOR-EMITTER REVERSE VOLTAGE
–VCEO (V)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM30HC-2H
INDUCTION HEATER USE
NON-INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
500
400
300
200
100
0
100
2
3 4 5 7 101
2
3 4 5 7 102
CONDUCTION TIME (CYCLES AT 60Hz)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
100
101
2 3 45 7
2 3
1.0
0.8
0.6
0.4
0.2
0
10 –3
10 –2
10 –1
100
2 3 45 7
2 3 45 7
2 3 45 7
TIME (s)
Feb.1999
相关型号：
©2020 ICPDF网 联系我们和版权申明