首页 > 晶体管 > 功率双极晶体管 > QM30

QM30

更新时间：2025-07-07 02:03:59
品牌：MITSUBISHI
描述：MEDIUM POWER SWITCHING USE INSULATED TYPE

PDF下载

中文翻译

免费 PCB/SMT

QM30 概述

MEDIUM POWER SWITCHING USE INSULATED TYPE 中功率开关使用绝缘型

QM30 数据手册

通过下载QM30数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

PDF下载
MITSUBISHI TRANSISTOR MODULES  
QM30DY-H  
MEDIUM POWER SWITCHING USE  
INSULATED TYPE  
QM30DY-H  
• IC  
Collector current .......................... 30A  
• VCEX Collector-emitter voltage ........... 600V  
• hFE DC current gain...............................75  
• Insulated Type  
• UL Recognized  
Yellow Card No. E80276 (N)  
File No. E80271  
APPLICATION  
AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders  
OUTLINE DRAWING & CIRCUIT DIAGRAM  
Dimensions in mm  
94  
(7)  
80  
(7)  
B2  
E2  
20  
20  
27  
φ6.5  
B2  
E2  
C1  
C2E1  
E2  
E1  
B1  
C2E1  
C1  
12  
E2  
E1  
B1  
Tab#110, t=0.5  
M5  
LABEL  
Feb.1999  
MITSUBISHI TRANSISTOR MODULES  
QM30DY-H  
MEDIUM POWER SWITCHING USE  
INSULATED TYPE  
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)  
Symbol  
VCEX (SUS)  
VCEX  
VCBO  
VEBO  
IC  
Parameter  
Collector-emitter voltage  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
Conditions  
Ratings  
600  
600  
600  
7
Unit  
V
IC=1A, VEB=2V  
VEB=2V  
V
Emitter open  
Collector open  
DC  
V
V
30  
A
–IC  
Collector reverse current  
Collector dissipation  
Base current  
DC (forward diode current)  
TC=25°C  
30  
A
PC  
250  
1.8  
W
A
IB  
DC  
Surge collector reverse current  
(forward diode current)  
–ICSM  
Peak value of one cycle of 60Hz (half wave)  
300  
A
Tj  
Junction temperature  
Storage temperature  
Isolation voltage  
–40~+150  
–40~+125  
2500  
°C  
°C  
Tstg  
Viso  
Charged part to case, AC for 1 minute  
Main terminal screw M5  
V
1.47~1.96  
15~20  
N·m  
kg·cm  
N·m  
kg·cm  
g
—
—
Mounting torque  
Weight  
1.96~2.94  
20~30  
Mounting screw M6  
Typical value  
210  
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)  
Limits  
Typ.  
—
Symbol  
ICEX  
Parameter  
Test conditions  
Unit  
Min.  
—
Max.  
1.0  
1.0  
200  
2.0  
2.5  
1.85  
—
Collector cutoff current  
VCE=600V, VEB=2V  
VCB=600V, Emitter open  
VEB=7V  
mA  
mA  
mA  
V
—
—
ICBO  
Collector cutoff current  
—
—
IEBO  
Emitter cutoff current  
—
—
VCE (sat)  
VBE (sat)  
–VCEO  
hFE  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Collector-emitter reverse voltage  
DC current gain  
IC=30A, IB=0.4A  
—
—
V
—
—
–IC=30A (diode forward voltage)  
IC=30A, VCE=2V/5V  
V
75/100  
—
—
—
—
1.5  
12  
ton  
µs  
—
—
ts  
Switching time  
VCC=600V, IC=30A, IB1=–IB2=0.6A  
µs  
—
—
3.0  
0.5  
2.0  
tf  
µs  
—
—
Rth (j-c) Q  
Rth (j-c) R  
Transistor part (per 1/2 module)  
Diode part (per 1/2 module)  
°C/W  
°C/W  
Thermal resistance  
(junction to case)  
—
—
Contact thermal resistance  
(case to fin)  
—
—
0.15  
Rth (c-f)  
Conductive grease applied (per 1/2 module)  
°C/W  
Feb.1999  
MITSUBISHI TRANSISTOR MODULES  
QM30DY-H  
MEDIUM POWER SWITCHING USE  
INSULATED TYPE  
PERFORMANCE CURVES  
COMMON EMITTER OUTPUT  
CHARACTERISTICS (TYPICAL)  
DC CURRENT GAIN VS.  
COLLECTOR CURRENT (TYPICAL)  
103  
7
100  
80  
60  
40  
20  
0
Tj  
=25°C  
V
CE=5.0V  
5
4
3
2
I
B
=2.0A  
V
CE=2.0V  
I
I
B
B
=1.0A  
=0.5A  
102  
7
5
I
I
B
B
=0.3A  
=0.1A  
4
3
2
T
T
j
j
=25°C  
=125°C  
101  
100  
2
3 4 5 7 101  
2
3 4 5 7 102  
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE VCE (V)  
COLLECTOR CURRENT IC (A)  
COMMON EMITTER INPUT  
CHARACTERISTIC (TYPICAL)  
SATURATION VOLTAGE  
CHARACTERISTICS (TYPICAL)  
1
101  
10  
7
7
T
j
=25°C  
5
5
V
CE=2.0V  
4
4
3
2
3
2
V
BE(sat)  
100  
7
100  
7
V
CE(sat)  
5
5
4
4
3
2
3
2
IB=0.4A  
Tj  
=25°C  
T
j
=125°C  
10–1  
10–1  
100  
2
3 4 5 7 101  
2
3 4 5 7 102  
1.0  
1.4  
1.8  
2.2  
2.6  
3.0  
BASE-EMITTER VOLTAGE VBE (V)  
COLLECTOR CURRENT IC (A)  
COLLECTOR-EMITTER SATURATION  
VOLTAGE (TYPICAL)  
SWITCHING TIME VS. COLLECTOR  
CURRENT (TYPICAL)  
101  
7
5
4
3
2
1
0
T
T
j
j
=25°C  
=125°C  
5
4
t
s
3
2
V
CC=300V  
B1=–IB2=0.6A  
I
100  
7
tf  
5
IC=30A  
t
on  
4
3
2
I
C
=20A  
Tj=25°C  
I
C
=10A  
Tj  
=125°C  
10–1  
3 4 5 7 100  
10–2  
100  
2
3 4 5 7 101  
2
3 4 5 7 102  
2
3 4 5 7 10–1  
2
BASE CURRENT IB (A)  
COLLECTOR CURRENT IC (A)  
Feb.1999  
MITSUBISHI TRANSISTOR MODULES  
QM30DY-H  
MEDIUM POWER SWITCHING USE  
INSULATED TYPE  
SWITCHING TIME VS. BASE  
CURRENT (TYPICAL)  
REVERSE BIAS SAFE OPERATING AREA  
70  
3
2
V
CC=300V  
I
I
B1=0.6A  
60  
50  
40  
30  
C
=30A  
101  
7
Tj  
=25°C  
IB2=  
Tj  
=125°C  
t
s
–1A  
–3A  
–5A  
5
4
3
2
t
f
100  
7
20  
10  
0
5
4
3
Tj  
=125°C  
100  
10–1  
2
3 4 5 7 100  
2
3 4 5 7 101  
0
200 300 400 500 600 700  
BASE REVERSE CURRENT –IB2 (A)  
COLLECTOR-EMITTER VOLTAGE VCE (V)  
FORWARD BIAS SAFE OPERATING AREA  
DERATING FACTOR OF F. B. S. O. A.  
102  
100  
7
5
SECOND  
BREAKDOWN  
AREA  
90  
80  
70  
60  
50  
3
2
101  
7
5
COLLECTOR  
DISSIPATION  
3
2
100  
7
5
40  
30  
20  
10  
0
3
2
T
C
=25°C  
NON–REPETITIVE  
10 –1  
100  
101  
102 103  
2 345 7  
0
20 40 60 80 100 120 140 160  
2 345 7  
2 3 45 7  
COLLECTOR-EMITTER VOLTAGE VCE (V)  
CASE TEMPERATURE TC (°C)  
REVERSE COLLECTOR CURRENT VS.  
COLLECTOR-EMITTER REVERSE  
VOLTAGE (DIODE FORWARD  
TRANSIENT THERMAL IMPEDANCE  
CHARACTERISTIC (TRANSISTOR)  
101  
102  
100 2 3 45 7  
0.5  
2 3 4 5 7  
CHARACTERISTICS) (TYPICAL)  
102  
7
5
0.4  
4
3
2
0.3  
0.2  
101  
7
5
4
3
2
0.1  
0
T
T
j
j
=25°C  
=125°C  
100  
10 –32 3 45 710 –22 3 4 5 710 –12 3 4 5 7100  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
TIME (s)  
COLLECTOR-EMITTER REVERSE VOLTAGE  
–VCEO (V)  
Feb.1999  
MITSUBISHI TRANSISTOR MODULES  
QM30DY-H  
MEDIUM POWER SWITCHING USE  
INSULATED TYPE  
RATED SURGE COLLECTOR REVERSE CURRENT  
(DIODE FORWARD SURGE CURRENT)  
REVERSE RECOVERY CHARACTERISTICS  
OF FREE-WHEEL DIODE (TYPICAL)  
102  
102  
500  
400  
300  
200  
100  
0
T
T
j
j
=25°C  
=125°C  
V
CC=300V  
7
5
I
B1=–IB2=0.6A  
3
2
101  
101  
7
5
I
rr  
3
2
100  
7
5
100  
Q
rr  
3
2
t
rr  
10 –1  
10 –1  
100  
2
3 4 5 7 101  
2
3 4 5 7 102  
100  
101  
102  
103  
2 3 45 7  
2 3 4 5 7  
2 3 45 7  
CONDUCTION TIME (CYCLES AT 60Hz)  
FORWARD CURRENT IF (A)  
TRANSIENT THERMAL IMPEDANCE  
CHARACTERISTIC (DIODE )  
100  
101  
2 3  
2 3 45 7  
2.0  
1.6  
1.2  
0.8  
0.4  
0
10 –3 2 3 45 710 –2  
45 710 –12 3 45 7 100  
2 3  
TIME (s)  
Feb.1999  

QM30 相关器件

型号 制造商 描述 价格 文档
QM30-14P-CF HRS QM (1.78mm-070) CONNECTORS 获取价格
QM30-14P-CFI HRS QM (1.78mm-070) CONNECTORS 获取价格
QM30-14P-CS HRS QM (1.78mm-070) CONNECTORS 获取价格
QM30-14P-CV HRS QM (1.78mm-070) CONNECTORS 获取价格
QM30-14P-EP HRS QM (1.78mm-070) CONNECTORS 获取价格
QM30-14P-EP(50) HRS Telecom and Datacom Connector 获取价格
QM30-14P-PR HRS QM (1.78mm-070) CONNECTORS 获取价格
QM30-14P-PR1 HRS QM (1.78mm-070) CONNECTORS 获取价格
QM30-14P-SP HRS QM (1.78mm-070) CONNECTORS 获取价格
QM30-14PA-CF HRS QM (1.78mm-070) CONNECTORS 获取价格

QM30 相关文章

  • 超高灵敏度霍尔元件科普：原理与典型应用
    2025-07-10
    8
  • 手机芯片升级：SoC 与 Multi Die 的技术角逐
    2025-07-10
    9
  • IBM 重磅发布新一代 Power11 芯片，性能与能效双飞跃
    2025-07-10
    14
  • 常用外围电路设计指南：硬件电路设计的实用参考
    2025-07-10
    22

    • 热门型号

  • 1N5930
  • 1N5942B
  • 1N4001
  • MBR3050CT
  • RTA02-8D
  • 4116T
  • 5KP43A/4
  • 1N5260A
  • MC79L05
  • BZX85C30
  • 9510-G
  • W2PE-54WZ-P
  • 1N6063
  • 2SA673
  • 20IMX35
    • Hi,有什么可以帮您？ 在线客服 或 微信扫码咨询
  • 概述
  • 数据手册
    • 2025 ICPDF网 联系我们和版权申明:QQ 272164286