QM30

更新时间:2025-07-07 02:03:59
品牌:MITSUBISHI
描述:MEDIUM POWER SWITCHING USE INSULATED TYPE

QM30 概述

MEDIUM POWER SWITCHING USE INSULATED TYPE 中功率开关使用绝缘型

QM30 数据手册

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MITSUBISHI TRANSISTOR MODULES  
QM30DY-H  
MEDIUM POWER SWITCHING USE  
INSULATED TYPE  
QM30DY-H  
IC  
Collector current .......................... 30A  
VCEX Collector-emitter voltage ........... 600V  
hFE DC current gain...............................75  
Insulated Type  
UL Recognized  
Yellow Card No. E80276 (N)  
File No. E80271  
APPLICATION  
AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders  
OUTLINE DRAWING & CIRCUIT DIAGRAM  
Dimensions in mm  
94  
(7)  
80  
(7)  
B2  
E2  
20  
20  
27  
φ6.5  
B2  
E2  
C1  
C2E1  
E2  
E1  
B1  
C2E1  
C1  
12  
E2  
E1  
B1  
Tab#110, t=0.5  
M5  
LABEL  
Feb.1999  
MITSUBISHI TRANSISTOR MODULES  
QM30DY-H  
MEDIUM POWER SWITCHING USE  
INSULATED TYPE  
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)  
Symbol  
VCEX (SUS)  
VCEX  
VCBO  
VEBO  
IC  
Parameter  
Collector-emitter voltage  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
Conditions  
Ratings  
600  
600  
600  
7
Unit  
V
IC=1A, VEB=2V  
VEB=2V  
V
Emitter open  
Collector open  
DC  
V
V
30  
A
–IC  
Collector reverse current  
Collector dissipation  
Base current  
DC (forward diode current)  
TC=25°C  
30  
A
PC  
250  
1.8  
W
A
IB  
DC  
Surge collector reverse current  
(forward diode current)  
–ICSM  
Peak value of one cycle of 60Hz (half wave)  
300  
A
Tj  
Junction temperature  
Storage temperature  
Isolation voltage  
–40~+150  
–40~+125  
2500  
°C  
°C  
Tstg  
Viso  
Charged part to case, AC for 1 minute  
Main terminal screw M5  
V
1.47~1.96  
15~20  
N·m  
kg·cm  
N·m  
kg·cm  
g
Mounting torque  
Weight  
1.96~2.94  
20~30  
Mounting screw M6  
Typical value  
210  
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)  
Limits  
Typ.  
Symbol  
ICEX  
Parameter  
Test conditions  
Unit  
Min.  
Max.  
1.0  
1.0  
200  
2.0  
2.5  
1.85  
Collector cutoff current  
VCE=600V, VEB=2V  
VCB=600V, Emitter open  
VEB=7V  
mA  
mA  
mA  
V
ICBO  
Collector cutoff current  
IEBO  
Emitter cutoff current  
VCE (sat)  
VBE (sat)  
–VCEO  
hFE  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Collector-emitter reverse voltage  
DC current gain  
IC=30A, IB=0.4A  
V
–IC=30A (diode forward voltage)  
IC=30A, VCE=2V/5V  
V
75/100  
1.5  
12  
ton  
µs  
ts  
Switching time  
VCC=600V, IC=30A, IB1=–IB2=0.6A  
µs  
3.0  
0.5  
2.0  
tf  
µs  
Rth (j-c) Q  
Rth (j-c) R  
Transistor part (per 1/2 module)  
Diode part (per 1/2 module)  
°C/W  
°C/W  
Thermal resistance  
(junction to case)  
Contact thermal resistance  
(case to fin)  
0.15  
Rth (c-f)  
Conductive grease applied (per 1/2 module)  
°C/W  
Feb.1999  
MITSUBISHI TRANSISTOR MODULES  
QM30DY-H  
MEDIUM POWER SWITCHING USE  
INSULATED TYPE  
PERFORMANCE CURVES  
COMMON EMITTER OUTPUT  
CHARACTERISTICS (TYPICAL)  
DC CURRENT GAIN VS.  
COLLECTOR CURRENT (TYPICAL)  
103  
7
100  
80  
60  
40  
20  
0
Tj  
=25°C  
V
CE=5.0V  
5
4
3
2
I
B
=2.0A  
V
CE=2.0V  
I
I
B
B
=1.0A  
=0.5A  
102  
7
5
I
I
B
B
=0.3A  
=0.1A  
4
3
2
T
T
j
j
=25°C  
=125°C  
101  
100  
2
3 4 5 7 101  
2
3 4 5 7 102  
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE VCE (V)  
COLLECTOR CURRENT IC (A)  
COMMON EMITTER INPUT  
CHARACTERISTIC (TYPICAL)  
SATURATION VOLTAGE  
CHARACTERISTICS (TYPICAL)  
1
101  
10  
7
7
T
j
=25°C  
5
5
V
CE=2.0V  
4
4
3
2
3
2
V
BE(sat)  
100  
7
100  
7
V
CE(sat)  
5
5
4
4
3
2
3
2
IB=0.4A  
Tj  
=25°C  
T
j
=125°C  
10–1  
10–1  
100  
2
3 4 5 7 101  
2
3 4 5 7 102  
1.0  
1.4  
1.8  
2.2  
2.6  
3.0  
BASE-EMITTER VOLTAGE VBE (V)  
COLLECTOR CURRENT IC (A)  
COLLECTOR-EMITTER SATURATION  
VOLTAGE (TYPICAL)  
SWITCHING TIME VS. COLLECTOR  
CURRENT (TYPICAL)  
101  
7
5
4
3
2
1
0
T
T
j
j
=25°C  
=125°C  
5
4
t
s
3
2
V
CC=300V  
B1=–IB2=0.6A  
I
100  
7
tf  
5
IC=30A  
t
on  
4
3
2
I
C
=20A  
Tj=25°C  
I
C
=10A  
Tj  
=125°C  
10–1  
3 4 5 7 100  
10–2  
100  
2
3 4 5 7 101  
2
3 4 5 7 102  
2
3 4 5 7 10–1  
2
BASE CURRENT IB (A)  
COLLECTOR CURRENT IC (A)  
Feb.1999  
MITSUBISHI TRANSISTOR MODULES  
QM30DY-H  
MEDIUM POWER SWITCHING USE  
INSULATED TYPE  
SWITCHING TIME VS. BASE  
CURRENT (TYPICAL)  
REVERSE BIAS SAFE OPERATING AREA  
70  
3
2
V
CC=300V  
I
I
B1=0.6A  
60  
50  
40  
30  
C
=30A  
101  
7
Tj  
=25°C  
IB2=  
Tj  
=125°C  
t
s
–1A  
–3A  
–5A  
5
4
3
2
t
f
100  
7
20  
10  
0
5
4
3
Tj  
=125°C  
100  
10–1  
2
3 4 5 7 100  
2
3 4 5 7 101  
0
200 300 400 500 600 700  
BASE REVERSE CURRENT –IB2 (A)  
COLLECTOR-EMITTER VOLTAGE VCE (V)  
FORWARD BIAS SAFE OPERATING AREA  
DERATING FACTOR OF F. B. S. O. A.  
102  
100  
7
5
SECOND  
BREAKDOWN  
AREA  
90  
80  
70  
60  
50  
3
2
101  
7
5
COLLECTOR  
DISSIPATION  
3
2
100  
7
5
40  
30  
20  
10  
0
3
2
T
C
=25°C  
NON–REPETITIVE  
10 –1  
100  
101  
102 103  
2 345 7  
0
20 40 60 80 100 120 140 160  
2 345 7  
2 3 45 7  
COLLECTOR-EMITTER VOLTAGE VCE (V)  
CASE TEMPERATURE TC (°C)  
REVERSE COLLECTOR CURRENT VS.  
COLLECTOR-EMITTER REVERSE  
VOLTAGE (DIODE FORWARD  
TRANSIENT THERMAL IMPEDANCE  
CHARACTERISTIC (TRANSISTOR)  
101  
102  
100 2 3 45 7  
0.5  
2 3 4 5 7  
CHARACTERISTICS) (TYPICAL)  
102  
7
5
0.4  
4
3
2
0.3  
0.2  
101  
7
5
4
3
2
0.1  
0
T
T
j
j
=25°C  
=125°C  
100  
10 32 3 45 710 –22 3 4 5 710 –12 3 4 5 7100  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
TIME (s)  
COLLECTOR-EMITTER REVERSE VOLTAGE  
–VCEO (V)  
Feb.1999  
MITSUBISHI TRANSISTOR MODULES  
QM30DY-H  
MEDIUM POWER SWITCHING USE  
INSULATED TYPE  
RATED SURGE COLLECTOR REVERSE CURRENT  
(DIODE FORWARD SURGE CURRENT)  
REVERSE RECOVERY CHARACTERISTICS  
OF FREE-WHEEL DIODE (TYPICAL)  
102  
102  
500  
400  
300  
200  
100  
0
T
T
j
j
=25°C  
=125°C  
V
CC=300V  
7
5
I
B1=–IB2=0.6A  
3
2
101  
101  
7
5
I
rr  
3
2
100  
7
5
100  
Q
rr  
3
2
t
rr  
10 –1  
10 –1  
100  
2
3 4 5 7 101  
2
3 4 5 7 102  
100  
101  
102  
103  
2 3 45 7  
2 3 4 5 7  
2 3 45 7  
CONDUCTION TIME (CYCLES AT 60Hz)  
FORWARD CURRENT IF (A)  
TRANSIENT THERMAL IMPEDANCE  
CHARACTERISTIC (DIODE )  
100  
101  
2 3  
2 3 45 7  
2.0  
1.6  
1.2  
0.8  
0.4  
0
10 –3 2 3 45 710 –2  
45 710 12 3 45 7 100  
2 3  
TIME (s)  
Feb.1999  

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