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Description:
QM30 MEDIUM POWER SWITCHING USE INSULATED TYPE
Prototype PCB
Part No.:   QM30
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Description:   MEDIUM POWER SWITCHING USE INSULATED TYPE
File Size :   72 K    
Page : 5 Pages
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Maker   MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]http://www.mitsubishichips.com
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MITSUBISHI TRANSISTOR MODULES
QM30DY-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
3
2
V
CC
=300V
I
B1
=0.6A
I
C
=30A
T
j
=25°C
T
j
=125°C
REVERSE BIAS SAFE OPERATING AREA
70
COLLECTOR CURRENT I
C
(A)
t
s
, t
f
(µs)
60
50
40
30
20
10
T
j
=125°C
SWITCHING TIME
10
1
7
5
4
3
2
10
0
7
5
4
3
10
–1
t
s
I
B2
=
–1A
–3A
–5A
t
f
2 3 4 5 7 10
0
2 3 4 5 7 10
1
0
0
100 200 300 400 500 600 700
BASE REVERSE CURRENT –I
B2
(A)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
FORWARD BIAS SAFE OPERATING AREA
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3 T
C
=25°C
2
NON–REPETITIVE
10
–1
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
2 3 4 5 7 10
3
100
90
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR CURRENT I
C
(A)
DERATING FACTOR (%)
80
70
60
50
40
30
20
10
0
0
20
40
60
COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
10
S
50
1m
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR REVERSE CURRENT –I
C
(A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
10
0
2 3 45 710
1
2 3 4 5 7 10
2
0.5
0.4
D
C
S
S
80 100 120 140 160
CASE TEMPERATURE
T
C
(°C)
Z
th (j–c)
(°C/ W)
10
2
7
5
4
3
2
10
1
7
5
4
3
2
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
0.3
0.2
0.1
0
10
–3
2 3 4 5 7 10
–2
2 3 4 5 7 10
–1
2 3 4 5 7 10
0
10
0
0.4
T
j
=25°C
T
j
=125°C
0.8
1.2
1.6
2.0
2.4
TIME (s)
COLLECTOR-EMITTER REVERSE VOLTAGE
–V
CEO
(V)
Feb.1999
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