QM400HA-24B [MITSUBISHI]
HIGH POWER SWITCHING USE INSULATED TYPE; 大功率开关使用绝缘型
| 型号： | QM400HA-24B |
| 厂家： | 
Mitsubishi Group |
| 描述： | HIGH POWER SWITCHING USE INSULATED TYPE |
| 文件： | 总5页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI TRANSISTOR MODULES
QM400HA-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
QM400HA-24B
• IC
Collector current ........................ 400A
• VCEX Collector-emitter voltage ......... 1200V
• hFE DC current gain.............................750
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
2
20.5
23.5
28
20.5
4–φ6.5
BX
E
C
E
E
9
E
B
C
18
3
9.5
23.5
23.5
93 0.25
113 0.5
3–M4
2–M8
LABEL
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM400HA-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
VCEX (SUS)
VCEX
VCBO
VEBO
IC
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Conditions
Ratings
1200
1200
1200
7
Unit
V
IC=1A, VEB=2V
VEB=2V
V
Emitter open
Collector open
DC
V
V
400
A
–IC
Collector reverse current
Collector dissipation
Base current
DC (forward diode current)
TC=25°C
400
A
PC
3120
20
W
A
IB
DC
Surge collector reverse current
(forward diode current)
–ICSM
Peak value of one cycle of 60Hz (half wave)
4000
A
Tj
Junction temperature
Storage temperature
Isolation voltage
–40~+150
–40~+125
2500
°C
°C
Tstg
Viso
Charged part to case, AC for 1 minute
Main terminal screw M8
V
8.83~10.8
90~110
1.96~2.94
20~30
N·m
kg·cm
N·m
kg·cm
N·m
kg·cm
N·m
kg·cm
g
Mounting screw M6
—
—
Mounting torque
0.98~1.47
10~15
B(E) terminal screw M4
0.98~1.47
10~15
BX terminal screw M4
Typical value
Weight
870
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Limits
Typ.
—
Symbol
ICEX
Parameter
Test conditions
Unit
Min.
—
Max.
6.0
Collector cutoff current
VCE=1200V, VEB=2V
mA
mA
mA
V
—
—
6.0
ICBO
Collector cutoff current
VCB=1200V,Emitter open
VEB=7V, Collector open
—
—
300
4.0
IEBO
Emitter cutoff current
—
—
VCE (sat)
VBE (sat)
–VCEO
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
IC=400A, IB=530mA
—
—
4.0
V
—
—
1.8
IC=–400A (diode forward voltage)
IC=400A, VCE=4.0V
V
750
—
—
—
—
—
2.5
ton
µs
—
—
15
ts
Switching time
VCC=600V, IC=400A, IB1=800mA, –IB2=8.0A
µs
—
—
3.0
tf
µs
—
—
0.04
0.175
Rth (j-c) Q
Rth (j-c) R
Transistor part
Diode part
°C/W
°C/W
Thermal resistance
(junction to case)
—
—
Contact thermal resistance
(case to fin)
—
—
0.02
Rth (c-f)
Conductive grease applied
°C/W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM400HA-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
104
7
500
400
300
200
100
0
IB=0.4A
IB=0.2A
T
j
=25°C
5
4
I
B
=0.8A
3
2
IB
=0.1A
I
B=80mA
103
7
5
4
V
CE=4.0V
3
2
T
j
=25°C
Tj
=125°C
102
101
2
3 4 5 7 102
2
3 4 5 7 103
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
101
101
7
V
CE=2.8V
7
T
j=25°C
5
5
VBE(sat)
4
4
3
2
3
2
100
7
100
7
VCE(sat)
5
5
4
4
IB=530mA
3
2
3
2
Tj
=25°C
T
j=125°C
10 –1
10 –1
2.2
2.6
3.0
3.4
3.8
4.2
101
2
3 4 5 7 102
2
3 4 5 7 103
BASE-EMITTER VOLTAGE VBE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
2
5
Tj=25°C
T
j=125°C
101
7
4
IC=400A
5
4
3
I
C
=300A
3
2
1
t
s
2
100
7
5
4
I
C
=200A
t
f
IC=100A
V
CC=600V
T
T
j
=25°C
I
B1=800mA
t
on
3
2
j=125°C
–IB2=8A
0
10
–2 2 3 57
–12 3 5 7 0 2 3 5 7
10
101
101
2
3 4 5 7 102
2
3 4 5 7 103
10
BASE CURRENT IB (A)
COLLECTOR CURRENT IC (A)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM400HA-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
102
7
1200
T
j
=125°C
VCC=600V
Tj=25°C
IB2=–8A
IC=400A
Tj=125°C
5
1000
800
600
400
IB1=800mA
4
3
2
101
7
ts
tf
5
4
3
2
200
0
100
100
2
3 4 5 7 101
2
3 4 5 7 102
0
200 400 600 800 1000 1200
BASE REVERSE CURRENT –IB2 (A)
COLLECTOR-EMITTER VOLTAGE VCE (V)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
103
100
7
5
50µs
SECOND
BREAKDOWN
AREA
90
80
70
60
50
40
30
20
10
0
200µs
1ms
100µs
3
2
DC
102
7
5
COLLECTOR
DISSIPATION
3
2
101
7
5
3
TC =25°C
NON-REPETITIVE
2
100
100 2 3 57 101 2 3 5 7 102 2 3 5 7103
0
20 40 60 80 100 120 140 160
COLLECTOR-EMITTER VOLTAGE VCE (V)
CASE TEMPERATURE TC (°C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
100
0.05
101
2 3
5
7
CHARACTERISTICS) (TYPICAL)
103
7
5
0.04
4
3
2
0.03
0.02
102
7
5
4
3
2
0.01
0
Tj=25°C
Tj=125°C
101
10 –32 3 5 710 –2 2 3 5 710 –12 3 5 7100
0
0.4
0.8
1.2
1.6
2.0
TIME (s)
COLLECTOR-EMITTER REVERSE VOLTAGE
–VCEO (V)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM400HA-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
4000
3500
3000
2500
2000
1500
5
4
3
Irr
2
Orr
102
101
7
VCC=600V
IB1=0.8A
–IB2=8A
5
4
3
2
Tj=25°C
Tj=125°C
1000
500
0
trr
101
7
5
100
100
5 7 102
2
3 4 5 7 103
2 3 4 5
2
3 4 5 7 101
2
3 4 5 7 102
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT IF (A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
100 2 3 57 101 2 3 5 7
0.20
0.16
0.12
0.08
0.04
0
10 –3 2 3 5710 –2 2 3 5 710 –1 2 3 5 7 100
TIME (s)
Feb.1999
相关型号：
QM40DY-3H
Power Bipolar Transistor, 40A I(C), 2-Element, NPN, Silicon, Plastic/Epoxy, 7 Pin, MODULE-7
MITSUBISHI
©2020 ICPDF网 联系我们和版权申明